K9HCG08U1M - 64Gb 8Gx8 MLC NAND Flash | Samsung | SSD Storage
Référence : K9HCG08U1M ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $0 | $0,00 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1 000 | $0 | $0,00 |
K9HCG08U1M Présentation
NAND Flash is a non-volatile memory technology in which memory cells are connected in series, enabling very high density and low cost per bit compared to NOR Flash. Within the memory hierarchy, NAND Flash sits as mass-storage media below DRAM (which is volatile) and above storage interfaces such as SATA, PCIe, and eMMC controllers. MLC (Multi-Level Cell) NAND stores two bits per cell, doubling density relative to SLC at the cost of lower endurance and tighter timing margins, which is why MLC devices are almost always paired with a dedicated NAND controller implementing ECC (Error Correction Code), wear leveling, and bad-block management.
Key characteristics of the K9HCG08U1M include its 64Gb capacity, x8 I/O bus, asynchronous page-based read/program architecture with address/data/command multiplexing on the 8-bit bus, and extended industrial operating temperature of -40C to +105C (TA) as reported by distributors. Control signals follow the standard Samsung NAND interface: CLE, ALE, CE#, RE#, WE#, WP#, and a Ready/Busy (R/B#) output.
The device uses Samsung's advanced E-die process technology per datasheet references for the family. As raw MLC NAND, it does not contain an internal controller; system designers must provide block management. Typical applications include solid-state drives, USB flash drives, memory cards, set-top boxes, industrial recorders, and embedded mass storage where high capacity per device is required.
Design consideration: because MLC NAND has limited program/erase cycles, always implement ECC and wear leveling in the host controller and validate timing at both temperature extremes.
This page synthesizes distributor listings, drop-in same-family alternatives, and practical design guidance not consolidated in the manufacturer datasheet.
Alternatives de remplacement direct pour K9HCG08U1M — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec K9HCG08U1M (même facteur de forme et même empreinte) — différant par Package, Interface, Organization, Memory Type, Cell Type.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
K9XXG08U0M
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$5.6 / unité
Voir la fiche technique →K9XXG08UXM
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
Contactez-nous pour le prix
Voir la fiche technique →K9HCG08U1E
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
K9LBG08U0M
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
K9MDG08U5M
✅ Remplacement direct✓ En stock
$35.5 / unité
Voir la fiche technique →K9HCG08U1M Valeurs maximales et caractéristiques électriques
| Memory Technology | MLC NAND Flash |
| Total Capacity | 64 Gbit |
| Organisation de la mémoire | 8G x 8 |
| Largeur du bus de données | 8 bit |
| Type d'interface | Asynchronous NAND (multiplexed address/data/command) |
| Boîtier | TSOP-48 (PDSO48) |
| Type de montage | Surface Mount |
| Température de fonctionnement | -40C to +105C (TA) |
| Ready/Busy Output | Yes (R/B#) |
| Die Technology | Samsung E-die (per datasheet family) |
| Full Ordering Code | K9HCG08U1M-PCB0 / K9HCG08U1M-PCB0T00 |
Guide de configuration des broches du K9HCG08U1M tsop-48 (pdso48)
Configuration des broches du K9HCG08U1M (boîtier tsop-48 (pdso48)). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour K9HCG08U1M.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
K9HCG08U1M convient pour 6 applications: Solid-State Drives (SSD), USB Flash Drives, Memory Cards (SD/microSD), Industrial Data Recorders, Set-Top Boxes and Smart TV Storage, Embedded Mass Storage Modules.
Solid-State Drives (SSD)
The K9HCG08U1M's 64Gb MLC capacity per TSOP-48 device lets an SSD controller reach multi-terabyte arrays with a modest chip count. Its standard 8-bit asynchronous Samsung NAND interface is directly supported by mature SSD controller firmware, including bad-block tables and multi-plane scheduling where applicable. Placed behind an ECC-enabled controller, the MLC two-bits-per-cell density delivers low cost per gigabyte, while the extended -40C to +105C operating range reported by distributors supports industrial SSD variants. Trade-off: asynchronous TSOP-48 NAND is slower than modern Toggle/BGA NAND, so this part suits cost-driven and legacy SSD platforms rather than performance-tier drives.
Recommandé
USB Flash Drives
High-density MLC NAND such as the K9HCG08U1M is a classic fit for high-capacity USB flash drives, where cost per gigabyte dominates. A single 64Gb device in a thin 48-pin TSOP package fits inside compact drive housings and pairs naturally with USB 3.x NAND controller ICs that implement BCH ECC and wear leveling. Because the Samsung command set is an industry reference, controller bring-up is straightforward. The -40C to +105C distributor-specified temperature range tolerates automotive and outdoor use better than consumer-only NAND. Designers should budget for MLC endurance limits in write-intensive usage and enable power-fail protection via the WP# pin to prevent corruption on sudden unplug events.
Recommandé
Memory Cards (SD/microSD)
SD and microSD card controllers based on the Samsung NAND command set can incorporate the K9HCG08U1M to deliver large capacities in a small card form factor. The TSOP-48 leaded package can be mounted or die-banked for card assembly, and the x8 multiplexed interface minimizes controller pin count. MLC density keeps bill-of-material cost low for consumer card SKUs, while the distributor-reported -40C to +105C range supports industrial card variants used in data loggers and cameras. Performance consideration: asynchronous page reads and program times cap sequential throughput below what modern UHS-class cards achieve, so this part targets standard-class or industrial-grade cards where reliability and cost outweigh speed.
Recommandé
Industrial Data Recorders
Industrial data loggers, black-box recorders, and SCADA historians require non-volatile storage that survives harsh environments. The K9HCG08U1M's reported -40C to +105C operating window and robust TSOP-48 surface-mount construction meet these ambient requirements. Its 64Gb MLC capacity stores years of high-rate sensor logs, and the standard Samsung 8-bit interface is supported by common industrial SoCs and FPGA controllers implementing BCH ECC. Use WP# control tied to the system power supervisor so writes are locked during brownouts, and implement wear leveling given MLC endurance limits. For vibration-prone installations, the leaded TSOP package with proper solder fillets provides proven mechanical reliability.
Recommandé
Set-Top Boxes and Smart TV Storage
Set-top boxes and smart TVs use NAND Flash for channel databases, DVR buffering, firmware over-the-air updates, and app storage. The K9HCG08U1M provides 64Gb per chip, sufficient for these workloads without the cost of eMMC. Its asynchronous 8-bit interface connects directly to mainstream STB SoCs with NAND boot support, and the Ready/Busy handshake simplifies driver integration. Because broadcast recording involves frequent large sequential writes, MLC endurance is adequate with controller-level wear leveling. The distributor-reported -40C to +105C range covers enclosed, fanless AV equipment environments. For designs prioritizing boot speed, pair with a small NOR or SPI boot device alongside this NAND.
Recommandé
Embedded Mass Storage Modules
Custom embedded modules - medical devices, networking appliances, kiosks - frequently build raw NAND plus controller into a soldered-down storage module. The K9HCG08U1M is a strong candidate: 64Gb MLC per TSOP-48 chip enables tiered capacities by populating one to four devices, all sharing the same verified footprint. The widely documented Samsung NAND command interface shortens controller firmware development, and the extended -40C to +105C distributor-specified range suits unventilated enclosures. Layout guidance: keep CE#, RE#, WE# traces short and match lengths across chips in multi-device banks; dedicate solid ground plane under the bus. Sustained-write products must budget MLC endurance with over-provisioning.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour K9HCG08U1M — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | K9XXG08U0M | K9XXG08UXM | K9HCG08U1E | K9LBG08U0M | K9MDG08U5M |
|---|---|---|---|---|---|---|
| Package | TSOP-48 (PDSO48) | TSOP-48 - same | TSOP-48 - same | TSOP-48 - same | TSOP-48 - same | TSOP-48 - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Type | MLC NAND Flash | MLC NAND Flash | MLC NAND Flash | MLC NAND Flash (same E-die) | MLC NAND Flash | MLC NAND Flash |
| Data Bus Width | 8 bit | 8 bit | 8 bit | 8 bit | 8 bit | 8 bit |
| Automotive Grade | No evidence in data | No evidence in data | No evidence in data | No evidence in data | No evidence in data | No evidence in data |
Principaux différenciateurs
- Highest capacity per TSOP-48 footprint in its datasheet family (vs K9LBG08U0M)
- Extended industrial temperature range (vs K9HCG08U1E)
- Shared Samsung K9XXG08UXM family datasheet enables low-risk second sourcing (vs K9MDG08U5M)
Notes de conception
As raw MLC NAND, the K9HCG08U1M has no internal ECC. You must implement ECC in the controller sized for MLC raw bit-error rates, plus wear leveling and bad-block table management. Samsung NAND devices ship with initial bad blocks already marked in the first page/spare area of defective blocks - your firmware must scan and persist this map at first boot. Never erase block 0; Samsung reserves the first block for boot integrity, and erasing it can destroy boot-marker data.
Use the WP# pin to protect the array during power transitions: assert WP# (low) whenever VCC is outside the valid operating window. A supervisor IC driving WP# from the brownout detector prevents partial-page programming and corrupted MLC cells during unexpected power loss, a leading cause of field failures in NAND systems. Additionally, decouple VCC with at least 0.1uF ceramic per device plus bulk capacitance, since program operations draw transient current pulses on the supply.
Route the 8-bit I/O bus and control signals (CLE, ALE, CE#, RE#, WE#) as short as practical, under 50 mm where possible, and keep them away from clock or RF lines. In multi-chip banks, match control-signal trace lengths across devices so shared CE#/RE#/WE# arrive within skew budget. Provide a continuous ground plane under the bus and series-terminate long RE# lines if read-cycle ringing is observed on the scope. The TSOP-48 land pattern should follow standard 0.5 mm pitch footprint rules.
Informations de conformité
No explicit compliance statements were found in the provided web data. Samsung commodity NAND of this era is typically RoHS-compliant, but this must be confirmed from the official Samsung product page or full datasheet before specification.
