K9HCG08U1M - 64Gb 8Gx8 MLC NAND Flash | Samsung | SSD Storage
부품 번호: K9HCG08U1M ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
K9HCG08U1M 개요
NAND Flash is a non-volatile memory technology in which memory cells are connected in series, enabling very high density and low cost per bit compared to NOR Flash. Within the memory hierarchy, NAND Flash sits as mass-storage media below DRAM (which is volatile) and above storage interfaces such as SATA, PCIe, and eMMC controllers. MLC (Multi-Level Cell) NAND stores two bits per cell, doubling density relative to SLC at the cost of lower endurance and tighter timing margins, which is why MLC devices are almost always paired with a dedicated NAND controller implementing ECC (Error Correction Code), wear leveling, and bad-block management.
Key characteristics of the K9HCG08U1M include its 64Gb capacity, x8 I/O bus, asynchronous page-based read/program architecture with address/data/command multiplexing on the 8-bit bus, and extended industrial operating temperature of -40C to +105C (TA) as reported by distributors. Control signals follow the standard Samsung NAND interface: CLE, ALE, CE#, RE#, WE#, WP#, and a Ready/Busy (R/B#) output.
The device uses Samsung's advanced E-die process technology per datasheet references for the family. As raw MLC NAND, it does not contain an internal controller; system designers must provide block management. Typical applications include solid-state drives, USB flash drives, memory cards, set-top boxes, industrial recorders, and embedded mass storage where high capacity per device is required.
Design consideration: because MLC NAND has limited program/erase cycles, always implement ECC and wear leveling in the host controller and validate timing at both temperature extremes.
This page synthesizes distributor listings, drop-in same-family alternatives, and practical design guidance not consolidated in the manufacturer datasheet.
드롭인 대체품: K9HCG08U1M — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: K9HCG08U1M (동일 폼 팩터 및 풋프린트) — 차이점: Package, Interface, Organization, Memory Type, Cell Type.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
K9XXG08U0M
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$5.6 / 개
데이터시트 보기 →K9XXG08UXM
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
가격 문의
데이터시트 보기 →K9HCG08U1E
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
K9LBG08U0M
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
K9MDG08U5M
✅ 드롭인✓ 재고 있음
$35.5 / 개
데이터시트 보기 →K9HCG08U1M 최대 정격 & 전기적 특성
| Memory Technology | MLC NAND Flash |
| Total Capacity | 64 Gbit |
| 메모리 구성 | 8G x 8 |
| 데이터 버스 폭 | 8 bit |
| 인터페이스 유형 | Asynchronous NAND (multiplexed address/data/command) |
| 패키지 | TSOP-48 (PDSO48) |
| 실장 유형 | Surface Mount |
| 동작 온도 | -40C to +105C (TA) |
| Ready/Busy Output | Yes (R/B#) |
| Die Technology | Samsung E-die (per datasheet family) |
| Full Ordering Code | K9HCG08U1M-PCB0 / K9HCG08U1M-PCB0T00 |
K9HCG08U1M tsop-48 (pdso48) 핀 구성 가이드
K9HCG08U1M(tsop-48 (pdso48) 패키지)의 핀 구성입니다. 이 디지털 IC에는 GPIO, 통신 인터페이스(UART, SPI, I2C), 전원 핀이 포함되어 있습니다. 대체 핀 기능과 구성 옵션은 제조사 데이터시트를 참조하십시오. 임베디드 시스템 설계와 PCB 레이아웃에 필수적입니다.
다음에 대한 상세 핀아웃 데이터 없음: K9HCG08U1M.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
K9HCG08U1M 적합 용도: 6 애플리케이션s: Solid-State Drives (SSD), USB Flash Drives, Memory Cards (SD/microSD), Industrial Data Recorders, Set-Top Boxes and Smart TV Storage, Embedded Mass Storage Modules.
Solid-State Drives (SSD)
The K9HCG08U1M's 64Gb MLC capacity per TSOP-48 device lets an SSD controller reach multi-terabyte arrays with a modest chip count. Its standard 8-bit asynchronous Samsung NAND interface is directly supported by mature SSD controller firmware, including bad-block tables and multi-plane scheduling where applicable. Placed behind an ECC-enabled controller, the MLC two-bits-per-cell density delivers low cost per gigabyte, while the extended -40C to +105C operating range reported by distributors supports industrial SSD variants. Trade-off: asynchronous TSOP-48 NAND is slower than modern Toggle/BGA NAND, so this part suits cost-driven and legacy SSD platforms rather than performance-tier drives.
추천
USB Flash Drives
High-density MLC NAND such as the K9HCG08U1M is a classic fit for high-capacity USB flash drives, where cost per gigabyte dominates. A single 64Gb device in a thin 48-pin TSOP package fits inside compact drive housings and pairs naturally with USB 3.x NAND controller ICs that implement BCH ECC and wear leveling. Because the Samsung command set is an industry reference, controller bring-up is straightforward. The -40C to +105C distributor-specified temperature range tolerates automotive and outdoor use better than consumer-only NAND. Designers should budget for MLC endurance limits in write-intensive usage and enable power-fail protection via the WP# pin to prevent corruption on sudden unplug events.
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Memory Cards (SD/microSD)
SD and microSD card controllers based on the Samsung NAND command set can incorporate the K9HCG08U1M to deliver large capacities in a small card form factor. The TSOP-48 leaded package can be mounted or die-banked for card assembly, and the x8 multiplexed interface minimizes controller pin count. MLC density keeps bill-of-material cost low for consumer card SKUs, while the distributor-reported -40C to +105C range supports industrial card variants used in data loggers and cameras. Performance consideration: asynchronous page reads and program times cap sequential throughput below what modern UHS-class cards achieve, so this part targets standard-class or industrial-grade cards where reliability and cost outweigh speed.
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Industrial Data Recorders
Industrial data loggers, black-box recorders, and SCADA historians require non-volatile storage that survives harsh environments. The K9HCG08U1M's reported -40C to +105C operating window and robust TSOP-48 surface-mount construction meet these ambient requirements. Its 64Gb MLC capacity stores years of high-rate sensor logs, and the standard Samsung 8-bit interface is supported by common industrial SoCs and FPGA controllers implementing BCH ECC. Use WP# control tied to the system power supervisor so writes are locked during brownouts, and implement wear leveling given MLC endurance limits. For vibration-prone installations, the leaded TSOP package with proper solder fillets provides proven mechanical reliability.
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Set-Top Boxes and Smart TV Storage
Set-top boxes and smart TVs use NAND Flash for channel databases, DVR buffering, firmware over-the-air updates, and app storage. The K9HCG08U1M provides 64Gb per chip, sufficient for these workloads without the cost of eMMC. Its asynchronous 8-bit interface connects directly to mainstream STB SoCs with NAND boot support, and the Ready/Busy handshake simplifies driver integration. Because broadcast recording involves frequent large sequential writes, MLC endurance is adequate with controller-level wear leveling. The distributor-reported -40C to +105C range covers enclosed, fanless AV equipment environments. For designs prioritizing boot speed, pair with a small NOR or SPI boot device alongside this NAND.
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Embedded Mass Storage Modules
Custom embedded modules - medical devices, networking appliances, kiosks - frequently build raw NAND plus controller into a soldered-down storage module. The K9HCG08U1M is a strong candidate: 64Gb MLC per TSOP-48 chip enables tiered capacities by populating one to four devices, all sharing the same verified footprint. The widely documented Samsung NAND command interface shortens controller firmware development, and the extended -40C to +105C distributor-specified range suits unventilated enclosures. Layout guidance: keep CE#, RE#, WE# traces short and match lengths across chips in multi-device banks; dedicate solid ground plane under the bus. Sustained-write products must budget MLC endurance with over-provisioning.
추천
추천 제품 요약
엔지니어링 참조 데이터: K9HCG08U1M — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | K9XXG08U0M | K9XXG08UXM | K9HCG08U1E | K9LBG08U0M | K9MDG08U5M |
|---|---|---|---|---|---|---|
| Package | TSOP-48 (PDSO48) | TSOP-48 - same | TSOP-48 - same | TSOP-48 - same | TSOP-48 - same | TSOP-48 - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Type | MLC NAND Flash | MLC NAND Flash | MLC NAND Flash | MLC NAND Flash (same E-die) | MLC NAND Flash | MLC NAND Flash |
| Data Bus Width | 8 bit | 8 bit | 8 bit | 8 bit | 8 bit | 8 bit |
| Automotive Grade | No evidence in data | No evidence in data | No evidence in data | No evidence in data | No evidence in data | No evidence in data |
주요 차별점
- Highest capacity per TSOP-48 footprint in its datasheet family (vs K9LBG08U0M)
- Extended industrial temperature range (vs K9HCG08U1E)
- Shared Samsung K9XXG08UXM family datasheet enables low-risk second sourcing (vs K9MDG08U5M)
설계 노트
As raw MLC NAND, the K9HCG08U1M has no internal ECC. You must implement ECC in the controller sized for MLC raw bit-error rates, plus wear leveling and bad-block table management. Samsung NAND devices ship with initial bad blocks already marked in the first page/spare area of defective blocks - your firmware must scan and persist this map at first boot. Never erase block 0; Samsung reserves the first block for boot integrity, and erasing it can destroy boot-marker data.
Use the WP# pin to protect the array during power transitions: assert WP# (low) whenever VCC is outside the valid operating window. A supervisor IC driving WP# from the brownout detector prevents partial-page programming and corrupted MLC cells during unexpected power loss, a leading cause of field failures in NAND systems. Additionally, decouple VCC with at least 0.1uF ceramic per device plus bulk capacitance, since program operations draw transient current pulses on the supply.
Route the 8-bit I/O bus and control signals (CLE, ALE, CE#, RE#, WE#) as short as practical, under 50 mm where possible, and keep them away from clock or RF lines. In multi-chip banks, match control-signal trace lengths across devices so shared CE#/RE#/WE# arrive within skew budget. Provide a continuous ground plane under the bus and series-terminate long RE# lines if read-cycle ringing is observed on the scope. The TSOP-48 land pattern should follow standard 0.5 mm pitch footprint rules.
규정 준수 정보
No explicit compliance statements were found in the provided web data. Samsung commodity NAND of this era is typically RoHS-compliant, but this must be confirmed from the official Samsung product page or full datasheet before specification.
