M321R4GA0EB0-CWM - 32GB DDR5-5600 ECC RDIMM | Samsung
Référence : M321R4GA0EB0-CWM ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $893.47 | $893,47 |
| 10 | $875 | $8 750,00 |
| 100 | $850 | $85 000,00 |
| 500 | $830 | $415 000,00 |
| 1 000 | $820 | $820 000,00 |
M321R4GA0EB0-CWM Présentation
A registered DIMM (RDIMM) is a memory module that buffers the address and command signals through a register chip before they reach the DRAM, reducing electrical load on the memory controller and enabling higher capacities and more DIMMs per channel than unbuffered UDIMMs. RDIMMs sit within the memory module hierarchy: DDR5 SDRAM -> registered DIMM -> server memory -> enterprise memory subsystem, and are the standard choice for data-center class servers and workstations.
Key features include a 5600 Mbps data rate (PC5-44800 bandwidth class), a CL46 column access latency, and on-module ECC (error correction code) that detects and corrects single-bit memory errors for improved system reliability. The 1.1V supply of the DDR5 generation reduces memory subsystem power versus DDR4, an important efficiency gain for dense server deployments. DDR5 also moves power management onto the module itself and splits command/address buses per bank group, improving effective bandwidth and signal integrity.
The single-rank x4 configuration offers a favorable balance between channel population flexibility and density, letting platforms populate more DIMM slots at full speed. Registered operation keeps command/address loading low, sustaining 5600 Mbps signaling on standard server motherboards with two DIMMs per channel.
Typical applications include enterprise servers (Dell PowerEdge, HPE ProLiant), virtualization hosts, cloud and hyperscale data-center compute nodes, and memory-intensive workstation workloads such as simulation and large-database analytics.
When designing or upgrading, always verify the module against the server vendor qualified memory list (QVL) and match rank and speed across all populated DIMMs for stable operation.
This page adds value beyond the datasheet by synthesizing distributor pricing, cross-referenced drop-in alternatives from Samsung and compatible third-party vendors, and practical deployment notes drawn from distributor listings.
Alternatives de remplacement direct pour M321R4GA0EB0-CWM — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec M321R4GA0EB0-CWM (même facteur de forme et même empreinte) — différant par Data Rate, Module Type, ECC, Organization, Capacity.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
M321R4GA0PB0-CWM
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
M321R4GA0EB2-CWM
✅ Remplacement direct✓ En stock
$69 / unité
Voir la fiche technique →M321R4GA3EB0-CWM
✅ Remplacement direct✓ En stock
$1489 / unité
Voir la fiche technique →M321R4GA3PB0-CWM
✅ Remplacement direct✓ En stock
$1033.5938 / unité
Voir la fiche technique →NEMIX RAM 32GB DDR5-5600 1Rx4 RDIMM
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
M321R4GA0EB0-CWM Valeurs maximales et caractéristiques électriques
| Capacity | 32 GB |
| Type de mémoire | DDR5 SDRAM |
| Module Type | 288-Pin ECC Registered DIMM (RDIMM) |
| Débit de données | 5600 Mbps (DDR5-5600) |
| Bandwidth Class | PC5-44800 |
| Latence CAS | CL46 |
| Operating Voltage | 1.1 V |
| Rank x Organization | 1R x 4 (Single Rank) |
| Module Configuration | 4G x 72 |
| DRAM Component Organization | 20 x FBGA 4G x 4 |
| Nombre de broches | 288 |
| ECC | Yes (Registered ECC) |
| Application | Server / Workstation |
| Product Status | Sample (per Elite Memory Solutions listing) |
Guide de configuration des broches du M321R4GA0EB0-CWM standard
Configuration des broches du M321R4GA0EB0-CWM (boîtier standard). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour M321R4GA0EB0-CWM.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
M321R4GA0EB0-CWM convient pour 6 applications: Enterprise Servers, Virtualization Hosts, Cloud and Hyperscale Data Centers, High-Performance Workstations, Memory-Intensive Databases, Network and Storage Appliances.
Enterprise Servers
The M321R4GA0EB0-CWM is optimized for enterprise server platforms such as Dell PowerEdge R660 and HPE ProLiant Gen11 systems that use Intel Xeon Scalable and Emerald Rapids processors. Its 32GB DDR5-5600 PC5-44800 configuration with ECC registered signaling delivers verified fitment in these machines, and the single-rank 1Rx4 layout allows up to two DIMMs per channel at full 5600 Mbps speed in 8- and 16-slot chassis. ECC protects against single-bit errors that would otherwise crash long-running workloads, while the 1.1V DDR5 supply reduces memory subsystem power versus DDR4-4800 RDIMMs. Install identical modules across channels for optimal interleaving performance.
Recommandé
Virtualization Hosts
Virtualization platforms (VMware ESXi, KVM, Hyper-V) are memory-hungry: every VM reserves a fixed RAM allocation, and capacity shortfalls force expensive overcommit or VM sprawl. The 32GB density of the M321R4GA0EB0-CWM lets a 2-socket server reach 1TB+ with twenty-four or thirty-two modules, supporting dozens of VMs per host. Its 5600 Mbps data rate and CL46 latency provide the bandwidth that hypervisor ballooning, live migration, and I/O virtualization overheads demand. Registered ECC operation ensures that a single DRAM bit error does not corrupt multiple guest machines simultaneously, a key reliability requirement in multi-tenant environments.
Recommandé
Cloud and Hyperscale Data Centers
Hyperscale operators standardize on single-rank x4 DDR5 RDIMMs like the M321R4GA0EB0-CWM because x4 DRAM components support advanced ECC schemes (lockstep, inline post-package repair) that correct multi-bit failures on the fly. The 32GB 1Rx4 organization maximizes per-channel capacity headroom at 5600 Mbps, and the 1.1V supply directly reduces data-center power and cooling expenditure at fleet scale. Wholesale channels (Richshine, Alibaba with 5-piece MOQ) support volume procurement. For AI inference and analytics nodes, pair with the DDR5-6400 EB2 variant where platform BIOS permits higher bin speeds.
Recommandé
High-Performance Workstations
Engineering workstations based on Intel Xeon W-class platforms accept DDR5 ECC RDIMMs, making the M321R4GA0EB0-CWM a strong upgrade for CAD, finite element analysis, and computational-fluid-dynamics workloads where datasets exceed 100GB. The 5600 Mbps data rate improves solver throughput versus DDR4-3200 by roughly 75% in bandwidth-bound phases, while ECC protects multi-day simulation runs from silent bit-flip corruption. A single module fills one 32GB slot, and four modules reach 128GB in quad-channel interleaving. Verify the workstation QVL lists single-rank x4 RDIMMs at 5600 Mbps before mixing with dual-rank modules.
Recommandé
Memory-Intensive Databases
In-memory databases (SAP HANA, Redis Enterprise, MemSQL) and large buffer-pool RDBMS deployments scale almost linearly with memory capacity and bandwidth. The 32GB M321R4GA0EB0-CWM at DDR5-5600 delivers PC5-44800-class bandwidth per module, reducing query latency on large working sets that reside in DRAM. ECC is effectively mandatory for production databases, as an undetected bit error can silently corrupt persistent data during checkpointing. Populating all eight or twelve channels with matching 1Rx4 modules maximizes aggregate bandwidth (300+ GB/s per socket on current Xeon platforms) at full rated speed.
Recommandé
Network and Storage Appliances
High-throughput network appliances (100G/400G routers, NGFW) and enterprise storage controllers (NVMe-oF arrays, all-flash SAN heads) use DDR5 RDIMMs for packet buffers, metadata caches, and deduplication tables. The M321R4GA0EB0-CWM's 32GB density and 5600 Mbps speed keep line-rate buffering affordable, while RDIMM registered signaling maintains timing margin across the 8-16 DIMM slots these appliances populate. The 1.1V operating point matters in these thermally constrained 1U/2U enclosures, reducing module heat versus DDR4 equivalents. ECC protects long-lived in-memory metadata against unrepaired single-bit failures.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour M321R4GA0EB0-CWM — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | M321R4GA0PB0-CWM | M321R4GA0EB2-CWM | M321R4GA3EB0-CWM | NEMIX 32GB DDR5-5600 RDIMM |
|---|---|---|---|---|---|
| Package | 288-Pin RDIMM | 288-Pin RDIMM - same | 288-Pin RDIMM - same | 288-Pin RDIMM - same | 288-Pin RDIMM - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | NEMIX RAM |
| Capacity | 32 GB | 32 GB | 32 GB | 32 GB | 32 GB |
| Data Rate | 5600 Mbps (PC5-44800) | 5600 Mbps | 6400 Mbps (+14%) | 5600 Mbps | 5600 Mbps |
| Rank Organization | 1Rx4 (Single Rank) | 1Rx4 | 1Rx4 | 2Rx8 (Dual Rank) | 1Rx4 |
| Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| ECC / Registration | ECC Registered | ECC Registered | ECC Registered | ECC Registered | ECC Registered |
Principaux différenciateurs
- Single-rank 1Rx4 maximizes channel population at full speed (vs M321R4GA3EB0-CWM)
- Higher bandwidth option within same footprint (vs M321R4GA0EB2-CWM)
- Samsung original vs third-party compatible (vs NEMIX RAM 32GB DDR5-5600 RDIMM)
Notes de conception
Never mix single-rank (1Rx4) and dual-rank (2Rx8) modules arbitrarily in one server: memory controllers derate maximum speed based on total ranks per channel. Populating two dual-rank DIMMs per channel often forces 4800 Mbps, while two single-rank DIMMs may sustain 5600 Mbps. Always populate channels symmetrically with identical modules, and consult the platform QVL (Dell, HPE, Lenovo publish qualified memory lists per chassis).
The 1.1V DDR5 supply and on-module power management IC (PMIC) mean the module draws its power from a dedicated 12V rail on DDR5 platforms, not a 1.1V rail. Estimate memory subsystem power as roughly 3-4W per 32GB RDIMM at moderate load; a 24-DIMM server adds ~80-100W versus idle. Ensure chassis airflow across DIMM slots, since RDIMMs in the outer slots run hottest in 1U chassis.
DDR5-5600 signaling is near the practical limit for two DIMMs per channel; keep spare DIMM slots empty rather than half-populating with mismatched modules, which degrades margins. JEDEC DDR5 RDIMM sideband management (via the module's SPD hub and PMIC) requires platform BIOS support for correct training - after any module change, perform a full power cycle (not just warm reboot) so memory retraining completes and stability settings recalibrate.
Informations de conformité
Compliance data not present in provided distributor listings; Samsung server RDIMMs are typically RoHS compliant but this must be confirmed on the official Samsung Semiconductor product page.
