M321R4GA3EB0-CWM - 32GB DDR5-5600 ECC RDIMM | Samsung
Référence : M321R4GA3EB0-CWM ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $1585.89 | $1 585,89 |
| 10 | $1569 | $15 690,00 |
| 100 | $1545 | $154 500,00 |
| 500 | $1512 | $756 000,00 |
| 1 000 | $1489 | $1 489 000,00 |
M321R4GA3EB0-CWM Présentation
A Registered DIMM (RDIMM) is a server memory module that buffers address and command signals through a registering clock driver (RCD), reducing electrical load on the memory controller and enabling higher capacities and densities than unbuffered UDIMMs. RDIMMs sit within the DDR5 SDRAM family, which itself belongs to the broader category of volatile DRAM memory used in servers, workstations, and enterprise storage. ECC (Error Correcting Code) functionality detects and corrects single-bit memory errors, which is essential for data integrity in 24/7 datacenter operation.
Key features include DDR5-5600 data rate (PC5-44800), 32GB capacity in a dual-rank configuration that balances density and signal integrity, 1.1V operation that lowers power draw versus DDR4's 1.2V, and on-module ECC registered architecture. DDR5's on-die ECC, bank grouping, and dual 32-bit subchannels per DIMM improve effective bandwidth and reliability at speed.
Technically, the module uses 20 pieces of 2Gx8 FBGA DDR5 DRAM across two ranks, with a registering clock driver managing command/address traffic. The x72-wide data path (64-bit data plus 8 bits of ECC-style check bandwidth) supports the RDIMM error-handling architecture.
Typical applications include Dell PowerEdge C6620, MX760c, R660, and R660xs servers (OEM cross-reference Dell P8XPW), edge compute nodes, low-VM-density hosts, and general-purpose virtualization platforms that list DDR5-5600 RDIMMs on their qualified vendor list.
Design consideration: always verify module presence against the server platform's Qualified Vendor List (QVL), since RDIMM speed may train down if the platform only supports lower DDR5 rates.
This page synthesizes distributor pricing, drop-in alternatives, and platform compatibility data not consolidated in the manufacturer datasheet.
Alternatives de remplacement direct pour M321R4GA3EB0-CWM — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec M321R4GA3EB0-CWM (même facteur de forme et même empreinte) — différant par Data Rate, Module Type, Organization, Capacity, ECC.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
M321R4GA3EB0-CWY
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
M321R4GA3EB2-CWM
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$1260 / unité
Voir la fiche technique →M321R4GA0EB2-CWM
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$69 / unité
Voir la fiche technique →M321R4GA0EB0-CWM
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$820 / unité
Voir la fiche technique →M321R4GA3PB0-CWM
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$1033.5938 / unité
Voir la fiche technique →M321R4GA3EB0-CWM Valeurs maximales et caractéristiques électriques
| Capacity | 32 GB |
| Type de mémoire | DDR5 SDRAM |
| Form Factor | 288-pin DIMM |
| Module Type | ECC Registered DIMM (RDIMM) |
| Débit de données | 5600 MT/s (PC5-44800) |
| Latence CAS | CL46 |
| Operating Voltage | 1.1 V |
| Rank Configuration | 2Rx8 (Dual Rank) |
| Organisation de la mémoire | 4Gx72 |
| DRAM Composition | 20 x FBGA 2Gx8 DDR5 DRAM |
| ECC | Yes (Registered with ECC) |
| Configuration | 1 x 32 GB |
| Bandwidth Class | PC5-44800 (44800 MB/s) |
| Application Segment | Server / Datacenter |
| Marque | Samsung Electronics |
| GTIN / EAN | 5715328154490 |
Guide de configuration des broches du M321R4GA3EB0-CWM standard
Configuration des broches du M321R4GA3EB0-CWM (boîtier standard). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour M321R4GA3EB0-CWM.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
M321R4GA3EB0-CWM convient pour 6 applications: Dell PowerEdge Rack Servers, Virtualization and VM-Density Hosting, Edge Compute Nodes, Datacenter Memory Upgrades, Enterprise Storage Controllers, High-Performance Workstations.
Dell PowerEdge Rack Servers
The M321R4GA3EB0-CWM is a validated memory option for Dell PowerEdge C6620, MX760c, R660, and R660xs platforms via Dell cross-reference P8XPW. Its DDR5-5600 data rate matches the memory controller speed of 4th/5th Gen Intel Xeon Scalable processors, while the registered ECC architecture protects against single-bit errors that would otherwise crash virtualization hosts. Modules install in 288-pin RDIMM slots with population rules per the platform's memory configuration guide; mixing ranks across channels should follow the QVL. Dual-rank 2Rx8 topology improves effective bandwidth through rank interleaving, delivering PC5-44800 throughput for general-purpose enterprise workloads and scale-out compute nodes.
Recommandé
Virtualization and VM-Density Hosting
For low-to-moderate VM density hosts, the 32GB capacity of the M321R4GA3EB0-CWM balances cost per GB against slot budget. DDR5-5600 with CL46 latency reduces memory access stalls for hypervisor workloads, while ECC registered signaling maintains uptime across months of continuous operation. Each module consumes one of the server's 288-pin RDIMM slots at 1.1V, keeping per-DIMM power low in dense chassis. Populating channels with identical 2Rx8 modules ensures stable memory training across BIOS updates. Serversupply and ServerOrbit position this module specifically for general-purpose virtualization, edge compute nodes, and infrastructure where certified-compatible, brand-new Samsung silicon with full ECC is required for reliability SLAs.
Recommandé
Edge Compute Nodes
Edge compute deployments benefit from the M321R4GA3EB0-CWM's combination of DDR5 efficiency and server-grade reliability. The 1.1V operating voltage lowers per-module power versus DDR4 RDIMMs, reducing thermal load in constrained edge enclosures, while the 5600 MT/s data rate feeds modern Xeon-class edge processors without becoming a bandwidth bottleneck. ECC registered operation prevents silent data corruption in remote sites where physical access is infrequent. Corewave Labs and Global Memory Supply position this module for edge compute use, noting its fit for low-VM-density hosts. Standard 288-pin RDIMM slots in short-depth edge servers accept the module directly with no adapters required.
Recommandé
Datacenter Memory Upgrades
Datacenter capacity upgrades use the M321R4GA3EB0-CWM to move legacy DDR4 platforms toward DDR5 density, with each 32GB dual-rank module filling one channel of 4th/5th Gen Xeon or equivalent EPYC-class systems that support DDR5-5600 RDIMMs. Samsung-original parts preserve OEM warranty chains and QVL validation required by enterprise support contracts, which is why ServerSupply, DirectMacro, and HardDiskDirect stock the exact MPN rather than generic equivalents. Memory population should follow the server vendor's ranked-slot ordering so the two ranks of each module interleave correctly across channels, sustaining the full PC5-44800 bandwidth headroom for database and analytics workloads.
Recommandé
Enterprise Storage Controllers
Enterprise storage arrays and RAID controllers rely on registered ECC memory to protect metadata and cache contents against bit errors. The M321R4GA3EB0-CWM's ECC registered architecture, built on twenty FBGA 2Gx8 DDR5 DRAM devices in a 4Gx72 organization, provides the check-bit bandwidth storage controllers require for cache coherency and journaling workloads. DDR5-5600 speed keeps cache flush and replication operations responsive, and the 1.1V rail reduces power in always-on arrays. Compatibility must be validated against the storage vendor's qualified parts list, mirroring the QVL discipline used for server RDIMMs, since some controllers enforce strict revision matching across all populated channels.
Recommandé
High-Performance Workstations
Workstation platforms built on Xeon W-class or Threadripper PRO processors with RDIMM support can use the M321R4GA3EB0-CWM for memory-intensive CAD, simulation, and AI development workloads. The DDR5-5600 dual-rank configuration provides the bandwidth and interleaving that benefit large-dataset rendering and model training, while ECC protects long-running simulations from silent corruption. Note that consumer desktop platforms cannot accept this module - it requires a board with registered DDR5 support. RamQuote confirms the module suits general compute platforms that list DDR5 RDIMMs; verify workstation QVL support, since some entry workstation boards cap training at lower DDR5 speeds.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour M321R4GA3EB0-CWM — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | M321R4GA3EB0-CWY | M321R4GA3EB2-CWM | M321R4GA0EB2-CWM | M321R4GA0EB0-CWM | M321R4GA3PB0-CWM |
|---|---|---|---|---|---|---|
| Package | 288-pin DIMM | 288-pin DIMM - same | 288-pin DIMM - same | 288-pin DIMM - same | 288-pin DIMM - same | 288-pin DIMM - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Capacity | 32 GB | 32 GB | 32 GB | 32 GB | 32 GB | 32 GB |
| Module Type | ECC Registered DIMM | ECC RDIMM | ECC RDIMM | ECC RDIMM | ECC RDIMM | ECC RDIMM |
| Operating Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
Principaux différenciateurs
- Samsung-original silicon with OEM QVL validation (vs NEMIX RAM MR44800-328K1 (third-party equivalent))
- DDR5-5600 speed bin at 1.1V (vs M321R4GA0EB0-CWM (family variant))
- Dual-rank 2Rx8 topology (vs Single-rank x8 equivalents in the market)
Notes de conception
RDIMMs cannot be mixed with UDIMMs or LRDIMMs on the same channel. The M321R4GA3EB0-CWM requires a platform whose memory controller supports registered DDR5-5600; desktop consumer boards will not boot with this module. Always populate channels with identical modules (same MPN family, rank, and speed) per the server vendor's memory population rules to guarantee consistent BIOS memory training and avoid speed down-training.
Server memory channel layout follows the platform vendor's slot-ordering guide. For Dell PowerEdge R660/C6620 systems, install the M321R4GA3EB0-CWM starting with the white-marked slots per the hardware owner's manual. Dual-rank modules consume more electrical margin per channel than single-rank parts, so maximum supported speed may drop when all channels are fully populated with 2Rx8 modules - consult the platform's memory configuration table for the derated speed at full population.
The module operates at the DDR5 standard 1.1V. Per-module power is substantially lower than DDR4 RDIMMs, but full-population configurations multiply consumption: a 16-DIMM server adds dozens of watts from memory alone. Estimated: at roughly 5-8 W per active DDR5 RDIMM (approximate, workload-dependent), a fully populated dual-socket server should budget 80-130 W for memory in thermal and PSU sizing. Verify against the server vendor's power calculator for your exact configuration.
Informations de conformité
Compliance data not present in provided web sources. Samsung enterprise memory modules are typically RoHS compliant, but this must be confirmed from official Samsung documentation.
