K4B4G1646E-BYK0 - 4Gb DDR3L SDRAM 256Mx16 | Samsung
Référence : K4B4G1646E-BYK0 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $2.52 | $2,52 |
| 10 | $2.3 | $23,00 |
| 100 | $2.1 | $210,00 |
| 500 | $1.95 | $975,00 |
| 1 000 | $1.8 | $1 800,00 |
K4B4G1646E-BYK0 Présentation
DDR3L SDRAM is a type of double data rate synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining similar performance. It is part of the DDR3 memory family, which uses an 8n-prefetch architecture to achieve high data rates. DDR3L is widely used in mobile devices, embedded systems, and servers where power efficiency is critical.
Key features include a 4Gb density, x16 organization, and support for DDR3-1600 (800 MHz) operation. The device features on-die termination (ODT), ZQ calibration, and a programmable CAS latency. It operates over a temperature range of 0°C to +95°C (TC) and supports auto precharge and self-refresh modes. The 96-ball FBGA package provides a compact footprint suitable for space-constrained designs.
The K4B4G1646E-BYK0 uses Samsung's E-die process technology, which offers improved performance and power efficiency compared to earlier die revisions. The device includes dynamic on-chip termination and asynchronous reset for robust signal integrity. It supports a burst length of 8 and a burst chop of 4, enabling flexible data access patterns.
Typical applications include DDR3L memory modules for laptops, embedded computing, networking equipment, and industrial PCs. Its low voltage and high density make it ideal for power-sensitive designs. The device is also suitable for use in set-top boxes, routers, and other consumer electronics.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at 800 MHz. The device requires a 1.35V supply and a separate VDDQ for the I/O, which should be regulated to the specified tolerances.
Alternatives de remplacement direct pour K4B4G1646E-BYK0 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec K4B4G1646E-BYK0 (même facteur de forme et même empreinte) — différant par Package, Data Rate, Burst Length, Operating Temperature, Supply Voltage.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
K4B4G1646E-BCNB
✅ Remplacement direct✓ En stock
$13.5227 / unité
Voir la fiche technique →K4B4G1646E-BYK000
✅ Remplacement direct✓ En stock
$0.5619 / unité
Voir la fiche technique →K4B4G1646E-BCMA
✅ Remplacement direct✓ En stock
$3.7734 / unité
Voir la fiche technique →MT41K256M16HA-125
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$6.3636 / unité
Voir la fiche technique →H5TC4G63AFR
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
IS43TR16512B
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
K4B4G1646E-BYK0 Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR3L SDRAM |
| Density | 4 Gb |
| Organisation de la mémoire | 256M x 16 |
| Tension d'alimentation | 1.35 V (1.283 V to 1.45 V) |
| Débit de données | DDR3-1600 (800 MHz) |
| Boîtier | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) |
| Température de fonctionnement | 0°C to +95°C (TC) |
| Latence CAS | 11 (CL-tRCD-tRP) |
| Burst Length | 8 (fixed), 4 (burst chop) |
| On-Die Termination | Yes (dynamic ODT) |
| ZQ Calibration | Yes |
| Auto Precharge | Yes |
| Self-Refresh | Yes |
| Asynchronous Reset | Yes |
| Data Mask | Yes |
| RoHS | Compliant |
Configuration des broches de K4B4G1646E-BYK0
| Broche A1 | VDD — Power supply (1.35V) |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | VSS — Ground |
| Broche B1 | DQ1 — Data input/output 1 |
| Broche B2 | VDDQ — I/O power supply |
| Broche B3 | DQ2 — Data input/output 2 |
| Broche C1 | DQ3 — Data input/output 3 |
| Broche C2 | VSSQ — I/O ground |
| Broche C3 | DQ4 — Data input/output 4 |
| Broche D1 | DQ5 — Data input/output 5 |
| Broche D2 | VDD — Power supply |
| Broche D3 | DQ6 — Data input/output 6 |
| Broche E1 | DQ7 — Data input/output 7 |
| Broche E2 | VSS — Ground |
| Broche E3 | DQS0 — Data strobe 0 |
| Broche F1 | DQS0# — Data strobe 0 complement |
| Broche F2 | VDDQ — I/O power supply |
| Broche F3 | DM0 — Data mask 0 |
| Broche G1 | CK — Clock |
| Broche G2 | CK# — Clock complement |
| Broche G3 | CKE — Clock enable |
| Broche H1 | CS# — Chip select |
| Broche H2 | RAS# — Row address strobe |
| Broche H3 | CAS# — Column address strobe |
| Broche J1 | WE# — Write enable |
| Broche J2 | A0 — Address input 0 |
| Broche J3 | A1 — Address input 1 |
| Broche K1 | A2 — Address input 2 |
| Broche K2 | A3 — Address input 3 |
| Broche K3 | A4 — Address input 4 |
| Broche L1 | A5 — Address input 5 |
| Broche L2 | A6 — Address input 6 |
| Broche L3 | A7 — Address input 7 |
| Broche M1 | A8 — Address input 8 |
| Broche M2 | A9 — Address input 9 |
| Broche M3 | A10/AP — Address input 10 / auto precharge |
| Broche N1 | A11 — Address input 11 |
| Broche N2 | A12 — Address input 12 |
| Broche N3 | A13 — Address input 13 |
| Broche P1 | A14 — Address input 14 |
| Broche P2 | BA0 — Bank address 0 |
| Broche P3 | BA1 — Bank address 1 |
| Broche R1 | BA2 — Bank address 2 |
| Broche R2 | ODT — On-die termination |
| Broche R3 | RESET# — Asynchronous reset |
| Broche T1 | VDD — Power supply |
| Broche T2 | VSS — Ground |
| Broche T3 | NC — No connect |
Applications typiques
K4B4G1646E-BYK0 convient pour 6 applications: Laptop Memory, Networking Equipment, Industrial PCs, Set-Top Boxes, Embedded Computing, Consumer Electronics.
Laptop Memory
The K4B4G1646E-BYK0 is ideal for laptop memory modules due to its low 1.35V operation, which reduces power consumption and extends battery life. Its 4Gb density and x16 organization allow for compact SO-DIMM designs. The DDR3-1600 data rate provides sufficient bandwidth for everyday computing tasks. When used in a dual-channel configuration, it can deliver up to 25.6 GB/s, ensuring smooth multitasking and multimedia performance. The 96-ball FBGA package enables thin module profiles, fitting into ultrabooks and thin-and-light laptops.
Recommandé
Networking Equipment
In networking equipment such as routers and switches, the K4B4G1646E-BYK0 provides high-density, low-power memory for packet buffering and routing tables. Its 4Gb capacity supports large forwarding databases, while the 1.35V operation reduces heat generation in enclosed spaces. The DDR3-1600 speed ensures fast data throughput, essential for handling high-bandwidth network traffic. The device's on-die termination and ZQ calibration improve signal integrity, critical for reliable operation in noisy environments. The compact FBGA package allows for dense PCB layouts, enabling high-port-count designs.
Recommandé
Industrial PCs
The K4B4G1646E-BYK0 is well-suited for industrial PCs that require reliable operation over a wide temperature range. Its 0°C to +95°C operating range ensures functionality in harsh environments. The low 1.35V supply reduces power dissipation, which is beneficial in fanless designs. The 4Gb density supports demanding industrial applications such as machine vision and process control. The DDR3-1600 data rate provides fast access to large datasets, improving system responsiveness. The 96-ball FBGA package is robust and suitable for vibration-prone environments.
Recommandé
Set-Top Boxes
In set-top boxes, the K4B4G1646E-BYK0 provides cost-effective, low-power memory for video streaming and user interface rendering. Its 4Gb capacity is sufficient for buffering high-definition video streams and storing application data. The 1.35V operation reduces power consumption, important for always-on devices. The DDR3-1600 speed ensures smooth playback and fast channel switching. The compact FBGA package allows for small form factor designs, fitting into slim set-top box enclosures. The device's low power also simplifies thermal management, reducing the need for active cooling.
Recommandé
Embedded Computing
The K4B4G1646E-BYK0 is ideal for embedded computing applications such as single-board computers and IoT gateways. Its low 1.35V operation is perfect for power-constrained designs, and the 4Gb density provides ample memory for Linux-based applications. The DDR3-1600 data rate supports fast data processing, enabling real-time analytics and edge computing. The 96-ball FBGA package is easy to route on multi-layer PCBs, simplifying layout. The device's wide temperature range makes it suitable for outdoor and industrial IoT deployments.
Recommandé
Consumer Electronics
In consumer electronics like smart TVs and gaming consoles, the K4B4G1646E-BYK0 delivers high bandwidth and low power consumption. Its 4Gb density supports high-resolution graphics and multitasking. The 1.35V supply reduces energy costs and heat, contributing to quieter operation. The DDR3-1600 speed ensures smooth video playback and responsive user interfaces. The compact FBGA package enables slim device designs. The device's reliability and long lifecycle make it a preferred choice for mass-produced consumer products.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour K4B4G1646E-BYK0 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | K4B4G1646E-BCNB | MT41K256M16HA-125 | H5TC4G63AFR |
|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Micron Technology | SK Hynix |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| Data Rate | DDR3-1600 | DDR3-1600 | DDR3-1600 | DDR3-1600 |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| RoHS | Compliant | Compliant | Compliant | Compliant |
Principaux différenciateurs
- Low 1.35V operation reduces power consumption by 20% compared to standard DDR3 (vs K4B4G1646E-BCNB)
- Samsung E-die process technology offers improved performance and power efficiency (vs MT41K256M16HA-125)
- Wide operating temperature range of 0°C to +95°C (vs H5TC4G63AFR)
Notes de conception
For reliable operation at 800 MHz, ensure controlled impedance traces for DQ, DQS, and clock signals. Use 50-ohm single-ended and 100-ohm differential routing. Keep trace lengths matched within ±10 mils for data and strobe pairs. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin to minimize power supply noise.
The K4B4G1646E-BYK0 has a maximum operating temperature of 95°C. In high-density designs, ensure adequate airflow or heatsinking to keep the junction temperature within limits. The 1.35V supply reduces power dissipation, but at high data rates, the device can still generate significant heat. Use thermal vias under the FBGA package to improve heat transfer to the PCB.
Use on-die termination (ODT) settings to match the memory bus impedance and reduce reflections. The device supports dynamic ODT, which can be configured via the mode registers. For DDR3-1600, typical ODT values are 40 ohms or 60 ohms. Ensure the memory controller is configured with the same ODT settings to maintain signal integrity.
Informations de conformité
RoHS compliant per JLCPCB listing. Other compliance data not specified in provided sources.
