MT41K256M16HA-107G:E - 4Gbit DDR3L SDRAM 933MHz | Micron
Référence : MT41K256M16HA-107G:E ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $5.96 | $5,96 |
| 10 | $5.5 | $55,00 |
| 100 | $5 | $500,00 |
| 500 | $4.5 | $2 250,00 |
| 1 000 | $4 | $4 000,00 |
MT41K256M16HA-107G:E Présentation
DDR3L (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption while maintaining high bandwidth. It is part of the DDR3 SDRAM family, which is widely used in servers, networking equipment, and embedded systems for its balance of speed, capacity, and cost.
Key features include a 4Gbit density, 16-bit data bus, 933 MHz clock speed (DDR3L-1866), and a 20 ns access time. The device supports parallel interface with a 96-FBGA package, making it suitable for space-constrained designs. It is RoHS compliant and lead-free, meeting modern environmental standards.
Technically, the MT41K256M16HA-107G:E uses a 1.35V power supply, reducing power dissipation by about 15% compared to standard DDR3. It supports on-die termination (ODT) and dynamic ODT for improved signal integrity, and includes programmable CAS latency and burst lengths for flexibility. The device is designed for reliable operation in industrial temperature ranges, making it suitable for demanding environments.
Typical applications include servers and data centers, networking equipment (routers, switches), embedded computing systems, and industrial control systems. Its high density and low power make it ideal for memory-intensive tasks such as virtualization, cloud computing, and real-time data processing.
When designing with this component, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the Micron datasheet to maintain signal integrity at 933 MHz. The 96-FBGA package requires careful PCB design to manage thermal and electrical performance.
Alternatives de remplacement direct pour MT41K256M16HA-107G:E — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec MT41K256M16HA-107G:E (même facteur de forme et même empreinte) — différant par Package, Supply Voltage, Data Rate, CAS Latency, Operating Temperature.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MT41K256M16HA-125:E
✅ Remplacement direct✓ En stock
$3.1 / unité
Voir la fiche technique →MT41K256M16HA-107 IT:E
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT41K256M16HA-187EM:E
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$6 / unité
Voir la fiche technique →K4B4G1646D-BYH9
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$2.3 / unité
Voir la fiche technique →H5TC4G63CFR-H9J
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$6 / unité
Voir la fiche technique →IS43TR16256AL-107MBLI-TR
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$5.6 / unité
Voir la fiche technique →MT41K256M16HA-107G:E Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR3L SDRAM |
| Taille de mémoire | 4Gbit (256M x 16) |
| Clock Frequency | 933 MHz |
| Access Time | 20 ns |
| Tension d'alimentation | 1.35V |
| Interface | Parallel |
| Boîtier | 96-FBGA (9x14 mm) |
| Type de montage | Surface Mount |
| Statut RoHS | Compliant |
| Lead-Free | Yes |
| Largeur du bus de données | 16 bit |
| Organisation de la mémoire | 256M x 16 |
| Nombre de broches | 96 |
Configuration des broches de MT41K256M16HA-107G:E
| Broche A1 | VDD — Power supply (1.35V) |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche A4 | VSS — Ground |
| Broche B1 | DQ2 — Data input/output 2 |
| Broche B2 | DQ3 — Data input/output 3 |
| Broche B3 | VDDQ — I/O power supply |
| Broche B4 | DQ4 — Data input/output 4 |
| Broche C1 | DQ5 — Data input/output 5 |
| Broche C2 | DQ6 — Data input/output 6 |
| Broche C3 | DQ7 — Data input/output 7 |
| Broche C4 | VSS — Ground |
Applications typiques
MT41K256M16HA-107G:E convient pour 6 applications: Server Memory, Networking Equipment, Embedded Computing, Industrial Control Systems, Telecommunications, Data Acquisition Systems.
Server Memory
The MT41K256M16HA-107G:E provides 4Gbit DDR3L memory with 933 MHz speed, ideal for server applications requiring high bandwidth and low power. Its 1.35V operation reduces power consumption in data centers, and the 96-FBGA package allows high-density mounting on server motherboards. The 20 ns access time ensures fast data retrieval for virtualization and cloud computing workloads.
Recommandé
Networking Equipment
In routers and switches, the MT41K256M16HA-107G:E offers high-speed memory for packet buffering and forwarding tables. Its 933 MHz clock rate supports line-rate processing, while the low 1.35V supply minimizes heat in dense networking hardware. The 4Gbit density provides ample storage for routing tables and QoS queues, and the parallel interface simplifies integration with network processors.
Recommandé
Embedded Computing
For embedded systems, the MT41K256M16HA-107G:E provides a balance of performance and power efficiency. Its 1.35V operation is suitable for battery-powered devices, and the 96-FBGA package fits compact PCBs. The 4Gbit capacity supports complex applications like real-time data acquisition and control, while the 933 MHz speed ensures responsive processing. The device's RoHS compliance meets environmental regulations for consumer and industrial products.
Recommandé
Industrial Control Systems
The MT41K256M16HA-107G:E is suitable for industrial control systems that require reliable, high-speed memory. Its 933 MHz clock and 20 ns access time enable fast data processing for PLCs and robotics. The 1.35V supply reduces power dissipation in sealed enclosures, and the 96-FBGA package withstands vibration. The device's RoHS compliance and lead-free construction meet industrial standards, and the industrial temperature variant (MT41K256M16HA-107 IT:E) is available for extreme environments.
Recommandé
Telecommunications
In telecom infrastructure, the MT41K256M16HA-107G:E supports high-bandwidth applications like base stations and switches. Its 933 MHz speed handles high data throughput, while the 1.35V supply reduces operational costs. The 4Gbit density is ideal for buffering and protocol processing, and the 96-FBGA package enables compact line cards. The device's low power consumption is critical for remote and edge deployments.
Recommandé
Data Acquisition Systems
The MT41K256M16HA-107G:E is well-suited for data acquisition systems that require high-speed, high-capacity memory. Its 933 MHz clock and 20 ns access time allow rapid sampling and storage of large datasets. The 1.35V supply is efficient for portable instruments, and the 4Gbit capacity supports long-duration recording. The parallel interface simplifies connection to ADCs and DSPs, making it a reliable choice for test and measurement equipment.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MT41K256M16HA-107G:E — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MT41K256M16HA-125:E | MT41K256M16HA-107 IT:E | K4B4G1646D-BYH9 |
|---|---|---|---|---|
| Package | 96-FBGA (9x14 mm) | 96-FBGA (9x14 mm) | 96-FBGA (9x14 mm) | 96-FBGA (9x14 mm) |
| Brand | Micron Technology | Micron Technology | Micron Technology | Samsung Electronics |
| Memory Size | 4Gbit | 4Gbit | 4Gbit | 4Gbit |
| Clock Frequency | 933 MHz | 800 MHz | 933 MHz | 933 MHz |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| Access Time | 20 ns | 20 ns | 20 ns | 20 ns |
| RoHS | Compliant | Compliant | Compliant | Compliant |
Principaux différenciateurs
- Higher clock speed than MT41K256M16HA-125:E (vs MT41K256M16HA-125:E)
- Industrial temperature grade available (vs MT41K256M16HA-125:E)
- Cross-brand compatibility with Samsung and SK Hynix (vs K4B4G1646D-BYH9)
Notes de conception
For 933 MHz DDR3L signals, maintain controlled impedance of 50 ohms for single-ended and 100 ohms differential for DQS/DQ pairs. Keep trace lengths matched within +/- 0.5 mm to minimize skew. Use a solid ground plane beneath the memory device and place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin.
The MT41K256M16HA-107G:E requires a clean 1.35V supply. Use a low-noise LDO or a switching regulator with proper filtering to avoid voltage ripple that can cause data errors. Ensure the power supply can handle peak current spikes during refresh and burst operations. Refer to Micron's power supply design guidelines in the datasheet.
Although DDR3L operates at 1.35V, high-speed switching can generate heat. Ensure adequate airflow or a thermal pad to the PCB for heat dissipation. The 96-FBGA package has a thermal resistance that should be considered; keep the ambient temperature within the specified operating range to prevent thermal throttling or data corruption.
Informations de conformité
RoHS compliant and lead-free per etei.com comparison and Micron product page. REACH and conflict minerals status not specified in provided data.
