H5TC4G63CFR-H9J - 4Gb DDR3L SDRAM 96-Ball TFBGA | SK Hynix
Référence : H5TC4G63CFR-H9J ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $8.5 | $8,50 |
| 10 | $7.8 | $78,00 |
| 100 | $7.1 | $710,00 |
| 500 | $6.5 | $3 250,00 |
| 1 000 | $6 | $6 000,00 |
H5TC4G63CFR-H9J Présentation
DDR3L (Double Data Rate 3 Low Voltage) SDRAM is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by approximately 20-30% while maintaining similar performance. It is part of the DDR3 memory family, which uses double data rate signaling to transfer data on both rising and falling edges of the clock, and is widely used in servers, networking equipment, and embedded systems where power efficiency is critical.
Key features include fully differential clock inputs (CK, CK) for improved signal integrity, differential data strobes (DQS, DQS) for precise data capture, and an on-chip DLL that aligns DQ, DQS, and DQS transitions with the CK transition. The DM (Data Mask) function masks write data on both rising and falling edges, enabling byte-level write operations. The device supports industrial temperature range, making it suitable for harsh environments.
Technically, the H5TC4G63CFR-H9J utilizes a CMOS process and features a 4-bit prefetch architecture typical of DDR3, achieving data rates up to 1866 Mbps (PC3-14900) at the -H9 speed grade. The 96-ball TFBGA package provides excellent thermal and electrical performance, with a compact footprint for space-constrained designs. The device is designed for high reliability and low power operation, with support for on-die termination (ODT) and programmable CAS latency.
Typical applications include main memory for industrial PCs, networking routers and switches, embedded computing modules, and high-performance storage systems. The low voltage and high density make it ideal for power-sensitive applications where battery life or thermal management is a concern.
When designing with this device, ensure proper decoupling of the VDD and VDDQ supplies with 0.1uF and 1uF capacitors placed close to the balls. Follow the PCB layout guidelines in the datasheet for signal integrity, especially for the differential clock and data strobe pairs.
Alternatives de remplacement direct pour H5TC4G63CFR-H9J — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec H5TC4G63CFR-H9J (même facteur de forme et même empreinte) — différant par Package, Burst Length, Supply Voltage (VDD/VDDQ), Data Rate, Memory Type.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
H5TC4G63CFR-H9I
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Voir la fiche technique →H5TC4G63CFR-xxL
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
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Voir la fiche technique →H5TC4G63CFR-xxI
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$8.1 / unité
Voir la fiche technique →H5TC4G63MFR-PBA
✅ Remplacement direct✓ En stock
$6.5 / unité
Voir la fiche technique →K4B4G1646E-BMK0
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
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Voir la fiche technique →MT41K256M16HA-125
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✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$8.25 / unité
Voir la fiche technique →H5TC4G63CFR-H9J Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR3L SDRAM |
| Density | 4Gb |
| Organisation de la mémoire | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V +0.100/-0.067V |
| Speed Grade | -H9 (1866 Mbps / PC3-14900) |
| Boîtier | 96-ball TFBGA |
| Number of Terminals | 96 |
| Temperature Grade | Industrial |
| Lead-Free | Yes |
| Sans halogène | Yes |
| RoHS Compliant | Yes |
| Clock Input | Fully differential (CK, CK) |
| Data Strobe | Differential (DQS, DQS) |
| On-Chip DLL | Yes |
| Data Mask (DM) | Yes |
Configuration des broches de H5TC4G63CFR-H9J
| Broche A1 | VDD — Power supply |
| Broche A2 | VSS — Ground |
| Broche B1 | DQ0 — Data input/output 0 |
| Broche B2 | DQ1 — Data input/output 1 |
| Broche C1 | VDDQ — DQ power supply |
| Broche C2 | VSSQ — DQ ground |
| Broche D1 | CK — Clock input |
| Broche D2 | CK# — Complementary clock input |
| Broche E1 | CKE — Clock enable |
| Broche E2 | CS# — Chip select |
| Broche F1 | RAS# — Row address strobe |
| Broche F2 | CAS# — Column address strobe |
| Broche G1 | WE# — Write enable |
| Broche G2 | ODT — On-die termination |
Applications typiques
H5TC4G63CFR-H9J convient pour 6 applications: Industrial PCs, Networking Routers and Switches, Embedded Computing Modules, High-Performance Storage Systems, Automotive Infotainment, Medical Monitoring Devices.
Industrial PCs
The H5TC4G63CFR-H9J provides 4Gb DDR3L memory for industrial PCs, operating at 1.35V to reduce power consumption and heat. Its industrial temperature grade ensures reliable operation in harsh environments. With a speed grade of -H9 (1866 Mbps), it supports high-bandwidth applications like real-time data processing and control systems. The 96-ball TFBGA package allows compact designs, and the low voltage extends the lifespan of power supplies in embedded systems.
Recommandé
Networking Routers and Switches
In networking equipment, the H5TC4G63CFR-H9J offers high-density, low-power memory for packet buffering and routing tables. Its 1.35V operation reduces power dissipation in 24/7 operation, and the 1866 Mbps data rate handles high-throughput traffic. The differential clock and data strobe inputs ensure signal integrity in high-speed designs. The industrial temperature grade supports deployment in uncontrolled environments like remote telecom shelters.
Recommandé
Embedded Computing Modules
The H5TC4G63CFR-H9J is ideal for embedded computing modules such as single-board computers and IoT gateways. Its 4Gb density provides ample memory for operating systems and applications, while the 1.35V supply minimizes power consumption for battery-powered devices. The compact 96-ball TFBGA package fits space-constrained designs. The -H9 speed grade ensures responsive performance for multitasking and multimedia applications.
Recommandé
High-Performance Storage Systems
In storage systems like SSDs and NAS, the H5TC4G63CFR-H9J provides fast, low-power memory for caching and metadata. Its 1866 Mbps data rate accelerates read/write operations, and the 1.35V operation reduces heat in dense storage arrays. The industrial temperature grade ensures reliability in data centers with high ambient temperatures. The on-chip DLL and ODT improve signal integrity for high-speed interfaces.
Recommandé
Automotive Infotainment
The H5TC4G63CFR-H9J supports automotive infotainment systems with its low power and high bandwidth. The 1.35V supply reduces heat in the cabin, and the industrial temperature grade handles extreme temperatures. The 4Gb density supports navigation, multimedia, and connectivity features. The differential signaling ensures reliable data transfer in noisy automotive environments.
Recommandé
Medical Monitoring Devices
The H5TC4G63CFR-H9J is suitable for medical monitoring devices requiring reliable, low-power memory. Its 1.35V operation extends battery life in portable monitors, and the industrial temperature grade ensures operation in clinical environments. The 4Gb density supports data logging and real-time signal processing. The RoHS compliance meets medical device environmental standards.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour H5TC4G63CFR-H9J — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | H5TC4G63CFR-H9I | H5TC4G63MFR-PBA | K4B4G1646E-BMK0 |
|---|---|---|---|---|
| Package | 96-ball TFBGA | 96-ball TFBGA | 96-ball TFBGA | 96-ball FBGA |
| Brand | SK Hynix | SK Hynix | SK Hynix | Samsung |
| Density | 4Gb | 4Gb | 4Gb | 4Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| Speed Grade | -H9 (1866 Mbps) | -H9I (1866 Mbps) | -PBA (1600 Mbps) | -BMK0 (1866 Mbps) |
| Temperature Grade | Industrial | Industrial | Industrial | Commercial |
| RoHS Compliant | Yes | Yes | Yes | Yes |
Principaux différenciateurs
- Industrial temperature grade (vs K4B4G1646E-BMK0)
- Higher speed grade (vs H5TC4G63MFR-PBA)
- Same-brand family compatibility (vs H5TC4G63CFR-H9I)
Notes de conception
Ensure proper decoupling of VDD and VDDQ supplies with 0.1uF and 1uF capacitors placed as close as possible to the balls. Use a low-impedance ground plane to minimize noise. The 1.35V supply should be regulated to within +0.100/-0.067V to ensure reliable operation.
Follow the PCB layout guidelines in the SK Hynix datasheet for signal integrity. Route differential clock (CK, CK#) and data strobe (DQS, DQS#) pairs with controlled impedance and matched lengths. Keep trace lengths for DQ and address lines balanced to minimize skew.
The 96-ball TFBGA package has a thermal resistance that requires adequate airflow or a heatsink for high-power applications. Ensure the PCB has thermal vias under the package to dissipate heat. The industrial temperature grade allows operation up to 95°C, but derating may be necessary at high data rates.
Informations de conformité
RoHS compliant and lead-free/halogen-free per datasheet. REACH and conflict minerals status not specified in provided data.