K4B4G1646D-BYH9 - 4Gb DDR3L SDRAM 256Mx16 1333Mbps | Samsung
Référence : K4B4G1646D-BYH9 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $3.5 | $3,50 |
| 10 | $3.2 | $32,00 |
| 100 | $2.9 | $290,00 |
| 500 | $2.6 | $1 300,00 |
| 1 000 | $2.3 | $2 300,00 |
K4B4G1646D-BYH9 Présentation
DDR3L (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory (SDRAM) that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by about 20% while maintaining similar performance. It is part of the DDR3 memory family, which succeeded DDR2 and is widely used in computing, networking, and embedded systems.
Key features include programmable CAS latency, write latency, on-die termination (ODT), and internal calibration for signal integrity. The device supports advanced DDR3 features such as posted CAS, programmable CWL, and asynchronous reset. It is designed for high-speed data transfer and is suitable for applications requiring reliable and efficient memory.
The K4B4G1646D-BYH9 uses a 4Gb D-die architecture, which is the fourth generation of Samsung's DDR3 die, offering improved performance and power efficiency. The 96FBGA package provides a compact footprint and excellent thermal characteristics, making it suitable for space-constrained designs.
Typical applications include personal computers, laptops, servers, networking equipment, automotive infotainment systems, and medical devices. Its low-voltage operation makes it ideal for battery-powered and energy-efficient systems.
When designing with this device, ensure proper signal integrity by following the layout guidelines in the datasheet, including controlled impedance traces and adequate decoupling. The device supports a temperature range of 0°C to 85°C, making it suitable for commercial and industrial environments.
Alternatives de remplacement direct pour K4B4G1646D-BYH9 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec K4B4G1646D-BYH9 (même facteur de forme et même empreinte) — différant par Package, CAS Latency, Operating Temperature, Data Rate, Supply Voltage.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
K4B4G1646E-BYH9
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
K4B4G1646D-BHMA
✅ Remplacement direct✓ En stock
$2.9 / unité
Voir la fiche technique →K4B4G1646D-BCMA
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
K4B4G1646D-BYK0
✅ Remplacement direct✓ En stock
$2.9 / unité
Voir la fiche technique →K4B4G1646E-BYK000
✅ Remplacement direct✓ En stock
$0.5619 / unité
Voir la fiche technique →K4B4G1646Q-HC
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
K4B4G1646D-BYH9 Valeurs maximales et caractéristiques électriques
| Density | 4 Gb |
| Organisation de la mémoire | 256M x 16 |
| Débit de données | 1333 Mbps |
| Tension d'alimentation | 1.35 V |
| Température de fonctionnement | 0 ~ 85 °C |
| Boîtier | 96FBGA |
| Number of Banks | 8 |
| Latence CAS | Programmable |
| Write Latency | Programmable |
| On-Die Termination | Yes |
| Internal Calibration | Yes |
| Lead-Free | Yes |
| Sans halogène | Yes |
| RoHS Compliant | Yes |
| Die Version | D-die |
Configuration des broches de K4B4G1646D-BYH9
| Broche A1 | VDD — Power supply |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche B1 | VSS — Ground |
| Broche B2 | DQ2 — Data input/output 2 |
| Broche B3 | DQ3 — Data input/output 3 |
| Broche C1 | VDDQ — I/O power supply |
| Broche C2 | DQ4 — Data input/output 4 |
| Broche C3 | DQ5 — Data input/output 5 |
| Broche D1 | VSSQ — I/O ground |
| Broche D2 | DQ6 — Data input/output 6 |
| Broche D3 | DQ7 — Data input/output 7 |
Applications typiques
K4B4G1646D-BYH9 convient pour 6 applications: Personal Computers, Networking Equipment, Automotive Infotainment, Medical Devices, Industrial Automation, Consumer Electronics.
Personal Computers
The K4B4G1646D-BYH9 is ideal for desktop and laptop memory modules, providing 4Gb capacity and 1333 Mbps data rate. Its low 1.35V operation reduces power consumption, extending battery life in portable devices. The 96FBGA package allows compact module designs, and the 8-bank architecture supports efficient multitasking.
Recommandé
Networking Equipment
In routers and switches, the K4B4G1646D-BYH9 provides high-bandwidth memory for packet buffering and routing tables. Its 1333 Mbps data rate ensures fast data throughput, while the low voltage helps manage thermal dissipation in dense networking hardware. The on-die termination and internal calibration features maintain signal integrity in high-speed designs.
Recommandé
Automotive Infotainment
The K4B4G1646D-BYH9 supports automotive infotainment systems requiring reliable memory for navigation, audio, and video processing. Its 0-85°C temperature range covers typical cabin environments, and the 1.35V operation reduces heat generation. The 96FBGA package withstands vibration, making it suitable for in-vehicle electronics.
Recommandé
Medical Devices
Medical monitoring equipment benefits from the K4B4G1646D-BYH9's low power and high reliability. The 4Gb capacity supports data logging and real-time processing, while the 1.35V operation is suitable for battery-powered devices. The RoHS and halogen-free compliance meets medical environmental standards.
Recommandé
Industrial Automation
In industrial controllers and PLCs, the K4B4G1646D-BYH9 provides fast, reliable memory for real-time control algorithms. Its 1333 Mbps data rate ensures quick response times, and the 0-85°C range suits factory environments. The low voltage reduces power consumption in 24V systems, and the FBGA package offers robust soldering.
Recommandé
Consumer Electronics
Smart TVs and set-top boxes use the K4B4G1646D-BYH9 for smooth video streaming and app performance. The 4Gb capacity handles multiple tasks, and the 1.35V operation keeps devices cool and energy-efficient. The 96FBGA package enables slim designs, and the high data rate supports 4K content.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour K4B4G1646D-BYH9 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | K4B4G1646E-BYH9 | K4B4G1646D-BHMA | K4B4G1646D-BCMA |
|---|---|---|---|---|
| Package | 96FBGA | 96FBGA | 96FBGA | 96FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Die Version | D-die | E-die | D-die | D-die |
Principaux différenciateurs
- Low-voltage 1.35V operation (vs Standard DDR3 at 1.5V)
- D-die architecture (vs Older C-die)
- 1333 Mbps data rate (vs K4B4G1646D-BHMA (unknown speed))
Notes de conception
Ensure controlled impedance traces for DQ and DQS signals to maintain signal integrity at 1333 Mbps. Use 50-ohm single-ended and 100-ohm differential routing. Keep trace lengths matched within +/- 10 mils to minimize skew.
Decouple VDD and VDDQ with 0.1uF and 1uF ceramic capacitors placed close to the pins. Use a solid ground plane to reduce noise. The 1.35V supply should have low ripple, ideally below 50mV, to ensure reliable operation.
The 96FBGA package has a thermal resistance of approximately 20°C/W. For high-speed operation, ensure adequate airflow or a thermal pad to keep junction temperature below 85°C. Monitor power dissipation, especially in dense layouts.
Informations de conformité
Lead-free and halogen-free per datasheet. RoHS compliant.
