MT41K64M16TW-107 - 1Gbit DDR3L SDRAM 1866MT/s | Micron Technology
Référence : MT41K64M16TW-107 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $4.03 | $4,03 |
| 10 | $3.75 | $37,50 |
| 100 | $3.42 | $342,00 |
| 500 | $3.18 | $1 590,00 |
| 1 000 | $2.95 | $2 950,00 |
MT41K64M16TW-107 Présentation
DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a class of synchronous dynamic random-access memory that transfers data on both clock edges and operates from a reduced 1.35 V core supply instead of the 1.5 V used by standard DDR3. As a DRAM component in the memory hierarchy, it sits between embedded SRAM caches and mass storage, providing the main working memory for processors and FPGA-based systems. DDR3L devices are backward-compatible with 1.5 V DDR3 systems when run in 1.5 V compatible mode.
Key features of this device include its 1 Gbit density in a x16 I/O width, an industry-standard 1866 speed grade (-107), and low-voltage operation at 1.35 V (nominal range 1.283 V to 1.45 V), which reduces memory subsystem power relative to 1.5 V DDR3. The 96-ball FBGA (PBGA-96) surface-mount package offers excellent signal integrity for high-speed address, command, and data buses.
Technically, the device uses CMOS DRAM core technology with double-data-rate I/O, 8n-bit prefetch architecture, and supports standard DDR3 functions such as on-die termination (ODT) and the RESET# pin for defined power-up state. According to Micron product data, the part operates over a 0C to +95C case temperature range in the standard (non-IT) grade, with industrial (-IT, -40C to +95C) and automotive (-AIT) grade variants sharing the same silicon and footprint.
Typical applications include embedded processor memory, FPGA companion memory (Microchip, Xilinx/AMD boards), industrial controllers, networking equipment, and set-top/consumer platforms where a single 1 Gbit x16 DDR3L device supplies the entire system memory.
A key design consideration: DDR3L fly-by routing requires careful length matching of the clock, command, and address lines, and VTT termination must be provided on the controller side; verify the controller supports DDR3L levels or enable 1.5 V compatible mode.
This page synthesizes distributor pricing, drop-in alternatives across temperature grades and brands, and practical DDR3L design notes not found in the manufacturer datasheet.
Alternatives de remplacement direct pour MT41K64M16TW-107 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec MT41K64M16TW-107 (même facteur de forme et même empreinte) — différant par Access Time, Memory Size, Organization, Package, Data Rate.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MT41K64M16TW-107 IT:J
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT41K64M16TW-107 AIT:J
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT41K64M16TW-107:J
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
K4B4G1646E-BYK000
✅ Remplacement direct✓ En stock
$0.5619 / unité
Voir la fiche technique →MT41K64M16TW-107 Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR3L SDRAM |
| Taille de mémoire | 1 Gbit |
| Organisation de la mémoire | 64M x 16 |
| Interface | Parallel |
| Clock Frequency | 933 MHz |
| Débit de données | 1866 MT/s (DDR3-1866 speed grade -107) |
| Access Time | 20 ns |
| Tension d'alimentation | 1.35 V (1.283 V to 1.45 V) |
| Technology | CMOS DRAM |
| Température de fonctionnement | 0C to +95C |
| Boîtier | 96-FBGA (8 x 14 mm) |
| Type de montage | Surface Mount |
| Refresh | Self refresh / auto refresh |
| Statut RoHS | Compliant (lead-free, halogen-free suffix J) |
| Base Part Number | MT41K64M16 |
| Supply Voltage - DDR3 Compatible Mode | 1.5 V (refer to DDR3 datasheet specifications) |
Guide de configuration des broches du MT41K64M16TW-107 96-fbga (8 x 14 mm)
Configuration des broches du MT41K64M16TW-107 (boîtier 96-fbga (8 x 14 mm)). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour MT41K64M16TW-107.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
MT41K64M16TW-107 convient pour 6 applications: FPGA Companion Memory, Embedded Industrial Controllers, Networking Equipment, Consumer and Set-Top Platforms, Automotive Infotainment and Telematics, Test and Measurement Instrumentation.
FPGA Companion Memory
The MT41K64M16TW-107 is a natural main-memory companion for FPGAs with hard or soft DDR3 memory controllers. Its x16 organization matches common FPGA memory-controller data widths, and its 1866 MT/s (-107) speed grade exceeds typical FPGA controller limits, providing timing margin at conservative controller frequencies. A single 96-ball FBGA device delivers 128 MB of working memory from one 1.35 V rail, minimizing BOM complexity. Place the memory close to the FPGA, length-match the fly-by command/address bus, and use on-die termination (ODT) to relax board-level termination requirements; verify controller training support for DDR3L levels before design freeze.
Recommandé
Embedded Industrial Controllers
Industrial PLCs, HMIs, and motor controllers require reliable working memory that survives wide ambient conditions. The industrial variant MT41K64M16TW-107 IT:J, drop-in identical to this part, covers -40C to +95C. With 1 Gbit density organized 64M x 16, one device supplies code execution and data buffers for RTOS-based controllers without the cost of multi-chip configurations. Its 1.35 V operation reduces memory subsystem power and heat inside sealed enclosures compared with 1.5 V DDR3. Design consideration: provide power-good supervision of the 1.35 V rail and use the RESET# pin to guarantee a defined state after brownout events in electrically noisy factory environments.
Recommandé
Networking Equipment
Switches, routers, and network interface cards use DDR3L as packet buffer and lookup-table memory. The MT41K64M16TW-107's 1866 MT/s data rate and x16 bus provide 3.7 GB/s peak bandwidth per device, sufficient for line-rate buffering in access-tier designs. The 96-ball FBGA package supports the short, impedance-controlled routing typical of networking boards. Multiple devices can share a controller channel in a fly-by topology with ODT. For networking designs, prioritize the IT grade for extended ambient, and confirm the network processor's DDR3L training algorithm supports Micron die revisions - a common integration pitfall in NPU-based designs.
Recommandé
Consumer and Set-Top Platforms
Set-top boxes, smart TVs, and digital media players use single 1 Gbit DDR3L devices for application memory. The MT41K64M16TW-107's 1.35 V operation lowers total platform power versus 1.5 V DDR3, directly improving energy-star compliance and thermal design in sealed enclosures. Its low commodity-market pricing at volume (approximately $2.95 at 1,000 units as of 2026-09-02) fits cost-sensitive consumer BOMs. The commercial 0C to +95C grade is sufficient for indoor consumer environments, keeping cost minimal. The x16 organization matches the memory interface of common set-top SoCs, often requiring just one memory chip per system.
Recommandé
Automotive Infotainment and Telematics
For automotive infotainment head units, telematics control units, and instrument clusters, the automotive variant MT41K64M16TW-107 AIT:J provides the same 1 Gbit 64Mx16 DDR3L functionality with automotive temperature qualification. According to Xecor comparison data, the AIT and IT variants exhibit identical performance profiles, meaning a design validated on the standard part migrates to the automotive grade without hardware change. DDR3L buffering supports navigation, media playback, and display pipelines. Design consideration: automotive environments demand power-supply brownout handling and defined RESET# behavior per OEM wake/sleep profiles - validate memory-state retention strategy across ignition cycles.
Recommandé
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and signal generators use DDR3L SDRAM as deep capture memory and waveform storage. The MT41K64M16TW-107's 1866 MT/s rate supports sustained streaming of ADC samples into buffer memory, while its 128 MB capacity provides useful capture depth in compact instruments. The deterministic, JEDEC-standard DDR3 interface simplifies FPGA-based memory controller implementations common in T&M architectures. IT-grade parts extend reliability in bench environments with variable temperature. When designing capture paths, budget for refresh-induced bandwidth loss (a few percent) and use the DM pin to mask fill data during idle segments.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MT41K64M16TW-107 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MT41K64M16TW-107 IT:J | MT41K64M16TW-107 AIT:J | MT41K64M16TW-107:J | K4B4G1646E-BYK000 |
|---|---|---|---|---|---|
| Package | 96-FBGA (8x14 mm) | 96-FBGA (8x14) - same | 96-FBGA (8x14) - same | 96-FBGA (8x14) - same | 96-FBGA (8x14) - same footprint, verify ball map |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Samsung Electronics |
| Supply Voltage | 1.35 V (1.283-1.45 V) | 1.35 V DDR3L | 1.35 V DDR3L | 1.35 V DDR3L | 1.35 V DDR3L |
| RoHS / Lead-Free | Compliant (J suffix) | Compliant (J suffix) | Compliant (J suffix) | Compliant (J suffix) | Compliant |
Principaux différenciateurs
- Extended industrial temperature option in identical footprint (vs MT41K64M16TW-107 IT:J)
- Automotive-grade migration path on same silicon (vs MT41K64M16TW-107 AIT:J)
- High speed grade at 1 Gbit density (vs K4B4G1646E-BYK000)
Notes de conception
DDR3L uses fly-by routing for the command/address/control bus with on-die termination (ODT) on the DRAM side. Keep CK/CK# as a tightly coupled differential pair, length-match CA signals to the clock within datasheet skew limits, and route each DQS/DQS# pair with its associated DQ byte lane matched in length. The 96-ball FBGA (8 x 14 mm) permits fan-out on standard via-in-pad or dog-bone patterns; maintain solid VDD/VSS reference planes beneath the memory to control impedance on the 1866 MT/s data lines.
Supply the device from a regulated 1.35 V rail within the 1.283 V to 1.45 V window. DDR3L peak currents occur during simultaneous read/write bursts, so place bulk capacitance near the device and multiple 100 nF ceramics on each VDD/VDDQ ball group. If the memory controller supports it, 1.5 V compatible mode is possible per Micron product data (refer to the DDR3 1.5V datasheet specifications in that mode). Estimated: at typical 1 Gbit DDR3L idle power levels of a few hundred milliwatts, thermal management is rarely needed - the FBGA package needs no heatsink.
Three frequent integration errors: (1) omitting the RESET# pull-down, leaving the DRAM in an undefined state at power-up - DDR3 requires RESET# low during power ramp; (2) selecting a memory-controller training algorithm not validated for the Micron die revision - confirm with the controller vendor; (3) substituting cross-brand DDR3L without verifying the exact ball map - JEDEC x16 96-ball maps are broadly standardized but not universally identical. Always verify against the Micron datasheet package section before swapping brands.
Informations de conformité
The 'J' suffix in Micron part numbering (MT41K64M16TW-107:J) denotes lead-free, RoHS-compliant, halogen-free packaging per distributor listings. REACH and conflict-minerals declarations require Micron's official compliance certificate. Automotive-grade qualification applies to the -AIT:J variant, not this standard part.
