MT53D1024M32D4DT-046 - 32Gbit LPDDR4 DRAM 2.133GHz | Micron
Référence : MT53D1024M32D4DT-046 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $27.98 | $27,98 |
| 10 | $26.1 | $261,00 |
| 100 | $24.35 | $2 435,00 |
| 500 | $22.8 | $11 400,00 |
| 1 000 | $21.15 | $21 150,00 |
MT53D1024M32D4DT-046 Présentation
LPDDR4 (Low Power Double Data Rate 4) is a JEDEC-defined class of synchronous dynamic RAM optimized for mobile, embedded, and battery-powered systems. Within the memory hierarchy, LPDDR4 sits in the DRAM family alongside DDR4 and GDDR; its defining trait is a low-voltage interface (1.1V VDD2/VDDQ core and I/O rails for LPDDR4 operation) and power-saving features such as deep power-down, per-bank refresh, and low-power self-refresh. LPDDR4 is the dominant main-memory technology in smartphones, tablets, automotive infotainment, and edge-AI compute modules.
Key features of the MT53D1024M32D4DT-046 include 32Gbit density in a single die, a 32-bit wide data bus, 2133 MHz clock operation (4266 MT/s), a built-in temperature sensor, auto precharge, write leveling, ZQ calibration, asynchronous reset, and data mask functionality. The WT:D grade of this part supports -40C to +95C operation, while AAT:D variants extend to +105C for automotive and industrial environments.
Architecturally, the device uses an 8n-prefetch DRAM core with dual-channel operation, supporting burst lengths of 16 and on-the-fly access modes. The unified LPDDR4/LPDDR4X die design means the same silicon can run at 1.1V VDDQ (LPDDR4 mode) or 0.6V VDDQ (LPDDR4X mode), allowing board designers to future-proof layouts for lower-power LPDDR4X migrations.
Typical applications include smartphone and tablet main memory, automotive infotainment and ADAS domains, edge-AI compute modules, industrial gateways, and networking equipment where high bandwidth per watt is critical.
Design consideration: LPDDR4 fly-by routing requires length-matched 4-layer-plus PCB stacks with on-die termination (ODT) tuning; always validate controller compatibility for the specific speed bin (-046 = 2133 MHz).
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Alternatives de remplacement direct pour MT53D1024M32D4DT-046 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec MT53D1024M32D4DT-046 (même facteur de forme et même empreinte) — différant par Organization, Package, Memory Type, Features, Interface.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MT53D1024M32D4DT-046 AUT:D
✅ Remplacement direct✓ En stock
$29.75 / unité
Voir la fiche technique →MT53D1024M32D4DT-046 AAT:D
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT53D1024M32D4DT-046 AIT:D
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT53D1024M32D4DT-053 WT:D
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT53D512M32D2DS-053 WT:D
✅ Remplacement direct✓ En stock
$6.05 / unité
Voir la fiche technique →MT53D1024M32D4DT-046 Valeurs maximales et caractéristiques électriques
| Type de mémoire | SDRAM - Mobile LPDDR4 |
| Taille de mémoire | 32 Gbit (4 GB) |
| Organisation de la mémoire | 1G x 32 |
| Clock Frequency | 2.133 GHz (4266 MT/s) |
| Interface | LPDDR4 (unified LPDDR4/LPDDR4X die) |
| Supply Voltage VDD2/VDDQ | 1.1 V (LPDDR4 mode) |
| LPDDR4X VDDQ | 0.60 V (LPDDR4X mode) |
| Boîtier | 200-VFBGA (10 mm x 14.5 mm) |
| Type de montage | Surface Mount |
| Caractéristiques | Built-in temperature sensor, auto precharge, write leveling, ZQ calibration, asynchronous reset, data mask |
| Operating Temperature (WT:D) | -40C to +95C |
| Operating Temperature (AAT:D) | -40C to +105C |
| Grade | WT:D (standard), AAT:D (automotive/industrial), AIT:D (automotive) |
| Access Type | Synchronous, 8n prefetch, burst length 16 |
| Statut RoHS | Compliant |
| Auto Precharge | Yes |
| Refresh | Self-refresh with per-bank refresh support |
Guide de configuration des broches du MT53D1024M32D4DT-046 200-vfbga (10 mm x 14.5 mm)
Configuration des broches du MT53D1024M32D4DT-046 (boîtier 200-vfbga (10 mm x 14.5 mm)). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour MT53D1024M32D4DT-046.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
MT53D1024M32D4DT-046 convient pour 6 applications: Smartphone and Tablet Main Memory, Automotive Infotainment and Cockpit, Edge AI and Vision Processing Modules, Industrial Gateways and Edge Servers, Networking and Communication Equipment, Test and Measurement Instrumentation.
Smartphone and Tablet Main Memory
The MT53D1024M32D4DT-046's 32Gbit density and 4266 MT/s data rate make it a flagship-class main memory for smartphones and tablets, where it serves as the unified memory for application processors. Its LPDDR4 1.1V VDDQ interface, deep power-down modes, and per-bank refresh reduce standby drain in always-on mobile devices, while the built-in temperature sensor enables thermal-aware refresh control. The 1G x 32 single-die organization simplifies PoP-stacked or discrete BOM builds, and the unified LPDDR4/LPDDR4X die lets a product roadmap drop to 0.6V VDDQ without a board redesign.
Recommandé
Automotive Infotainment and Cockpit
In automotive cockpit domain controllers, the MT53D1024M32D4DT-046 AAT:D grade operates from -40C to +105C, matching the ambient profile of head-unit and cluster electronics behind the windshield. The 4266 MT/s bandwidth sustains multiple simultaneous displays, navigation rendering, and audio processing, while the asynchronous reset and built-in temperature sensor support ISO 26262-aligned diagnostic architectures. Because LPDDR4 fly-by topology tolerates the longer traces common in automotive PCBs, this part integrates cleanly with automotive SoCs; designers must still derate timing for the +105C corner and confirm the AT-grade qualification with Micron.
Recommandé
Edge AI and Vision Processing Modules
Edge-AI compute modules (camera analytics, robotics perception) demand high memory bandwidth per watt, and the MT53D1024M32D4DT-046 delivers 4266 MT/s across a 32-bit bus while idling in low-power self-refresh between inference bursts. The 32Gbit (4 GB) capacity holds neural-network weights and frame buffers for multi-camera pipelines, and the data-mask feature simplifies partial writes to tensor buffers. In the AAT:D grade, operation to +105C suits sealed industrial enclosures with no forced airflow, and ZQ calibration maintains signal integrity as module temperature swings across the industrial range.
Recommandé
Industrial Gateways and Edge Servers
Industrial IoT gateways use the MT53D1024M32D4DT-046 as packet-buffer and application memory for SoCs such as ARM-based network processors, where its 4 GB capacity absorbs burst traffic between wired and wireless interfaces. The 2133 MHz clock provides headroom for protocol stacks and local analytics, while self-refresh with per-bank granularity keeps standby power low for battery-backed nodes. WT:D's -40C to +95C range covers most unconditioned enclosures; select the AAT:D grade for +105C environments such as motor cabinets, and implement periodic ZQ calibration across the temperature sweep to preserve eye margins on long fly-by traces.
Recommandé
Networking and Communication Equipment
In routers, switches, and 5G small-cell equipment, the MT53D1024M32D4DT-046 buffers packet queues and serves as run-time memory for network processors, exploiting its 32-bit bus and 4266 MT/s rate to sustain line-rate forwarding with burst-length-16 transactions. Auto precharge reduces command overhead in random-access patterns typical of packet buffers, and the asynchronous reset supports rapid recovery after watchdog events. Designs validated at the -046 speed bin should budget AC timing margin for high ambient inlet temperatures common in telecom racks, and the built-in temperature sensor enables firmware-driven refresh-rate scaling.
Recommandé
Test and Measurement Instrumentation
Oscilloscopes, protocol analyzers, and logic analyzers require deep capture memory with deterministic latency, and the MT53D1024M32D4DT-046's 32Gbit capacity stores long waveform or trace records while its 4266 MT/s bandwidth keeps pace with high-throughput acquisition front ends. Data mask allows partial updates to capture buffers without read-modify-write cycles, and ZQ calibration maintains output impedance accuracy across lab temperature changes. The unified LPDDR4/LPDDR4X die gives instrument makers a two-generation supply roadmap on one footprint, and the AAT:D grade supports portable instruments used in hot field environments to +105C.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MT53D1024M32D4DT-046 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MT53D1024M32D4DT-046 AUT:D | MT53D1024M32D4DT-046 AAT:D | MT53D1024M32D4DT-053 WT:D | MT53D512M32D2DS-053 WT:D |
|---|---|---|---|---|---|
| Package | 200-VFBGA (10x14.5 mm) | 200-VFBGA (10x14.5) - same | 200-VFBGA (10x14.5) - same | 200-VFBGA (10x14.5) - same | 200-VFBGA - same family footprint |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Memory Size | 32 Gbit (4 GB) | 32 Gbit | 32 Gbit | 32 Gbit | 16 Gbit |
| Organization | 1G x 32 | 1G x 32 | 1G x 32 | 1G x 32 | 512M x 32 |
| Supply Voltage (VDDQ, LPDDR4) | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| Automotive Grade | No (WT:D commercial) | Yes (AUT extended lifecycle) | Yes (AT automotive) | No | No |
Principaux différenciateurs
- Unified LPDDR4/LPDDR4X die on one footprint (vs MT53E1G32D2FW-046)
- Automotive temperature coverage in same footprint (vs MT53D1024M32D4DT-053 WT:D)
- Top-bin speed within the family (vs MT53D512M32D2DS-053 WT:D)
Notes de conception
LPDDR4 fly-by routing at 4266 MT/s requires length matching within tight skew windows per data-byte lane (DQ/DQS/DM groups) and command/address fly-by termination at the last device. Simulate ODT settings (on-die termination) against your trace impedance (typically 40-50 ohm) and re-run eye-margin tests across the -40C to +95C (or +105C for AAT:D) temperature range. Micron's LPDDR4 design guides recommend referencing all routing to a solid ground plane and keeping the controller-to-DRAM span short enough for the -046 speed bin.
The unified LPDDR4/LPDDR4X die runs VDD2/VDDQ at 1.1V in LPDDR4 mode and can support 0.60V VDDQ in LPDDR4X mode per the Micron datasheet. Design the PMIC rails as independently switchable (or LPDDR4X-ready) so a future firmware-driven transition to LPDDR4X cuts I/O power roughly 45% without a PCB respin. Budget core-current headroom for refresh bursts; peak IDD during all-bank refresh is the worst-case envelope for your 1.1V regulator sizing.
Do not assume drop-in interchange across vendors or die generations: Micron's official successor MT53E1G32D2FW-046 shares the 200-ball package but drops VDDQ from 1.1V to 0.6V, and the Olimex LPDDR4 case shows designs needing schematic notes and firmware changes on substitution. Also verify speed-bin firmware: a controller tuned for the -053 bin will fail at the -046 (2133 MHz) timing. Always re-run memory training/calibration after any die or grade change.
Use the official Micron datasheet ball map when creating the 200-VFBGA footprint - secondary aggregator ball maps have been found inaccurate for LPDDR4 address/data assignments. Place the VFBGA's VSS ball field over a dense via array to the ground plane for thermal and return-path integrity. Estimated: with typical LPDDR4 operation the die dissipates on the order of hundreds of milliwatts, so a 4-layer stack with solid planes is normally sufficient without dedicated heatsinking, but confirm with your IDD profile.
Informations de conformité
RoHS compliance per DigiKey listing for the WT:D grade. AEC-Q100 qualification maps to Micron's automotive grade suffixes (AT) rather than the standard JEDEC designation; verify the formal qualification level with Micron for automotive programs. REACH, halogen-free, and conflict-minerals declarations must be requested from Micron's latest product environmental report.
