MT53D1024M32D4DT-046 - 32Gbit LPDDR4 DRAM 2.133GHz | Micron
MPN: MT53D1024M32D4DT-046 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $27.98 | $27.98 |
| 10 | $26.1 | $261.00 |
| 100 | $24.35 | $2,435.00 |
| 500 | $22.8 | $11,400.00 |
| 1,000 | $21.15 | $21,150.00 |
Drop-in alternatives for MT53D1024M32D4DT-046 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
MT53D1024M32D4DT-046 AUT:D
β Drop-Inβ In Stock
$29.75 / Unit
View Datasheet βMT53D1024M32D4DT-046 AAT:D
β Drop-Inπ Reference alternative (not in catalog)
MT53D1024M32D4DT-046 AIT:D
β Drop-Inπ Reference alternative (not in catalog)
MT53D1024M32D4DT-053 WT:D
β Drop-Inπ Reference alternative (not in catalog)
MT53D512M32D2DS-053 WT:D
β Drop-Inβ In Stock
$6.05 / Unit
View Datasheet βMT53D1024M32D4DT-046 Maximum Ratings & Electrical Characteristics
| Memory Type | SDRAM - Mobile LPDDR4 |
| Memory Size | 32 Gbit (4 GB) |
| Organization | 1G x 32 |
| Clock Frequency | 2.133 GHz (4266 MT/s) |
| Interface | LPDDR4 (unified LPDDR4/LPDDR4X die) |
| Supply Voltage VDD2/VDDQ | 1.1 V (LPDDR4 mode) |
| LPDDR4X VDDQ | 0.60 V (LPDDR4X mode) |
| Package | 200-VFBGA (10 mm x 14.5 mm) |
| Mounting Type | Surface Mount |
| Features | Built-in temperature sensor, auto precharge, write leveling, ZQ calibration, asynchronous reset, data mask |
| Operating Temperature (WT:D) | -40C to +95C |
| Operating Temperature (AAT:D) | -40C to +105C |
| Grade | WT:D (standard), AAT:D (automotive/industrial), AIT:D (automotive) |
| Access Type | Synchronous, 8n prefetch, burst length 16 |
| RoHS Status | Compliant |
| Auto Precharge | Yes |
| Refresh | Self-refresh with per-bank refresh support |
MT53D1024M32D4DT-046 200-vfbga (10 mm x 14.5 mm) Pin Configuration Guide
Complete pinout information for MT53D1024M32D4DT-046 (200-vfbga (10 mm x 14.5 mm) package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for MT53D1024M32D4DT-046.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
MT53D1024M32D4DT-046 is suitable for 6 applications: Smartphone and Tablet Main Memory, Automotive Infotainment and Cockpit, Edge AI and Vision Processing Modules, Industrial Gateways and Edge Servers, Networking and Communication Equipment, Test and Measurement Instrumentation.
Smartphone and Tablet Main Memory
The MT53D1024M32D4DT-046's 32Gbit density and 4266 MT/s data rate make it a flagship-class main memory for smartphones and tablets, where it serves as the unified memory for application processors. Its LPDDR4 1.1V VDDQ interface, deep power-down modes, and per-bank refresh reduce standby drain in always-on mobile devices, while the built-in temperature sensor enables thermal-aware refresh control. The 1G x 32 single-die organization simplifies PoP-stacked or discrete BOM builds, and the unified LPDDR4/LPDDR4X die lets a product roadmap drop to 0.6V VDDQ without a board redesign.
Recommended
Automotive Infotainment and Cockpit
In automotive cockpit domain controllers, the MT53D1024M32D4DT-046 AAT:D grade operates from -40C to +105C, matching the ambient profile of head-unit and cluster electronics behind the windshield. The 4266 MT/s bandwidth sustains multiple simultaneous displays, navigation rendering, and audio processing, while the asynchronous reset and built-in temperature sensor support ISO 26262-aligned diagnostic architectures. Because LPDDR4 fly-by topology tolerates the longer traces common in automotive PCBs, this part integrates cleanly with automotive SoCs; designers must still derate timing for the +105C corner and confirm the AT-grade qualification with Micron.
Recommended
Edge AI and Vision Processing Modules
Edge-AI compute modules (camera analytics, robotics perception) demand high memory bandwidth per watt, and the MT53D1024M32D4DT-046 delivers 4266 MT/s across a 32-bit bus while idling in low-power self-refresh between inference bursts. The 32Gbit (4 GB) capacity holds neural-network weights and frame buffers for multi-camera pipelines, and the data-mask feature simplifies partial writes to tensor buffers. In the AAT:D grade, operation to +105C suits sealed industrial enclosures with no forced airflow, and ZQ calibration maintains signal integrity as module temperature swings across the industrial range.
Recommended
Industrial Gateways and Edge Servers
Industrial IoT gateways use the MT53D1024M32D4DT-046 as packet-buffer and application memory for SoCs such as ARM-based network processors, where its 4 GB capacity absorbs burst traffic between wired and wireless interfaces. The 2133 MHz clock provides headroom for protocol stacks and local analytics, while self-refresh with per-bank granularity keeps standby power low for battery-backed nodes. WT:D's -40C to +95C range covers most unconditioned enclosures; select the AAT:D grade for +105C environments such as motor cabinets, and implement periodic ZQ calibration across the temperature sweep to preserve eye margins on long fly-by traces.
Recommended
Networking and Communication Equipment
In routers, switches, and 5G small-cell equipment, the MT53D1024M32D4DT-046 buffers packet queues and serves as run-time memory for network processors, exploiting its 32-bit bus and 4266 MT/s rate to sustain line-rate forwarding with burst-length-16 transactions. Auto precharge reduces command overhead in random-access patterns typical of packet buffers, and the asynchronous reset supports rapid recovery after watchdog events. Designs validated at the -046 speed bin should budget AC timing margin for high ambient inlet temperatures common in telecom racks, and the built-in temperature sensor enables firmware-driven refresh-rate scaling.
Recommended
Test and Measurement Instrumentation
Oscilloscopes, protocol analyzers, and logic analyzers require deep capture memory with deterministic latency, and the MT53D1024M32D4DT-046's 32Gbit capacity stores long waveform or trace records while its 4266 MT/s bandwidth keeps pace with high-throughput acquisition front ends. Data mask allows partial updates to capture buffers without read-modify-write cycles, and ZQ calibration maintains output impedance accuracy across lab temperature changes. The unified LPDDR4/LPDDR4X die gives instrument makers a two-generation supply roadmap on one footprint, and the AAT:D grade supports portable instruments used in hot field environments to +105C.
Recommended
Recommended Products Summary
Engineering reference data for MT53D1024M32D4DT-046 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | MT53D1024M32D4DT-046 AUT:D | MT53D1024M32D4DT-046 AAT:D | MT53D1024M32D4DT-053 WT:D | MT53D512M32D2DS-053 WT:D |
|---|---|---|---|---|---|
| Package | 200-VFBGA (10x14.5 mm) | 200-VFBGA (10x14.5) - same | 200-VFBGA (10x14.5) - same | 200-VFBGA (10x14.5) - same | 200-VFBGA - same family footprint |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Memory Size | 32 Gbit (4 GB) | 32 Gbit | 32 Gbit | 32 Gbit | 16 Gbit |
| Organization | 1G x 32 | 1G x 32 | 1G x 32 | 1G x 32 | 512M x 32 |
| Clock Frequency | 2.133 GHz (4266 MT/s) | 2.133 GHz | 2.133 GHz | [DATA_NEEDED: -053 bin clock frequency] | [DATA_NEEDED: -053 bin clock frequency] |
| Operating Temperature | -40C to +95C (WT:D) | [DATA_NEEDED: AUT:D temperature range] | -40C to +105C | -40C to +95C | -40C to +95C |
| Supply Voltage (VDDQ, LPDDR4) | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| Automotive Grade | No (WT:D commercial) | Yes (AUT extended lifecycle) | Yes (AT automotive) | No | No |
| Lifecycle Status | Active (WT:D); MT53D family trending to MT53E migration | Extended lifecycle ordering | Active (automotive channels) | EOL notice issued; MT53E1G32D2FW-046 WT:B recommended | [DATA_NEEDED] |
Key Differentiators
- Unified LPDDR4/LPDDR4X die on one footprint (vs MT53E1G32D2FW-046)
- Automotive temperature coverage in same footprint (vs MT53D1024M32D4DT-053 WT:D)
- Top-bin speed within the family (vs MT53D512M32D2DS-053 WT:D)
Design Notes
LPDDR4 fly-by routing at 4266 MT/s requires length matching within tight skew windows per data-byte lane (DQ/DQS/DM groups) and command/address fly-by termination at the last device. Simulate ODT settings (on-die termination) against your trace impedance (typically 40-50 ohm) and re-run eye-margin tests across the -40C to +95C (or +105C for AAT:D) temperature range. Micron's LPDDR4 design guides recommend referencing all routing to a solid ground plane and keeping the controller-to-DRAM span short enough for the -046 speed bin.
The unified LPDDR4/LPDDR4X die runs VDD2/VDDQ at 1.1V in LPDDR4 mode and can support 0.60V VDDQ in LPDDR4X mode per the Micron datasheet. Design the PMIC rails as independently switchable (or LPDDR4X-ready) so a future firmware-driven transition to LPDDR4X cuts I/O power roughly 45% without a PCB respin. Budget core-current headroom for refresh bursts; peak IDD during all-bank refresh is the worst-case envelope for your 1.1V regulator sizing.
Do not assume drop-in interchange across vendors or die generations: Micron's official successor MT53E1G32D2FW-046 shares the 200-ball package but drops VDDQ from 1.1V to 0.6V, and the Olimex LPDDR4 case shows designs needing schematic notes and firmware changes on substitution. Also verify speed-bin firmware: a controller tuned for the -053 bin will fail at the -046 (2133 MHz) timing. Always re-run memory training/calibration after any die or grade change.
Use the official Micron datasheet ball map when creating the 200-VFBGA footprint - secondary aggregator ball maps have been found inaccurate for LPDDR4 address/data assignments. Place the VFBGA's VSS ball field over a dense via array to the ground plane for thermal and return-path integrity. Estimated: with typical LPDDR4 operation the die dissipates on the order of hundreds of milliwatts, so a 4-layer stack with solid planes is normally sufficient without dedicated heatsinking, but confirm with your IDD profile.
Compliance Information
RoHS compliance per DigiKey listing for the WT:D grade. AEC-Q100 qualification maps to Micron's automotive grade suffixes (AT) rather than the standard JEDEC designation; verify the formal qualification level with Micron for automotive programs. REACH, halogen-free, and conflict-minerals declarations must be requested from Micron's latest product environmental report.
