NT5CC256M16CP-DI - 4Gb DDR3L SDRAM 256Mx16 | Nanya
Référence : NT5CC256M16CP-DI ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $4.5 | $4,50 |
| 10 | $4.1 | $41,00 |
| 100 | $3.7 | $370,00 |
| 500 | $3.3 | $1 650,00 |
| 1 000 | $2.9 | $2 900,00 |
NT5CC256M16CP-DI Présentation
DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that operates at 1.35V, reducing power consumption by about 20% compared to standard 1.5V DDR3. It is part of the DDR3 family, which uses prefetch buffers and on-die termination to achieve high data rates. DDR3L is commonly used in computing, networking, and embedded systems where power efficiency is critical.
Key features include 8 internal memory banks, differential clock inputs (CK, CK#), programmable CAS latency (CL) of 5-11, and write latency (CWL) of 5-9. The device supports on-die termination (ODT) and DLL-off mode for low-power operation. It also features programmable additive latency (posted CAS) and a 0.075V reference voltage tolerance.
The NT5CC256M16CP-DI uses a 70nm process technology, offering a balance of performance and power efficiency. The VFBGA-96 package provides a compact footprint with excellent thermal and electrical characteristics. The device supports burst lengths of 8 and 4, and includes auto-refresh and self-refresh modes for power management.
Typical applications include DDR3L memory modules for laptops, servers, networking equipment, and industrial computing. It is also used in automotive infotainment and ADAS systems where reliability and temperature range are critical. The 1.35V operation makes it ideal for battery-powered devices.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the PCB layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable 1.35V supply and a 0.75V reference voltage for correct operation.
Alternatives de remplacement direct pour NT5CC256M16CP-DI — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec NT5CC256M16CP-DI (même facteur de forme et même empreinte) — différant par Package, Data Rate, Supply Voltage, Burst Length, CAS Latency (CL).
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
NT5CC256M16DP-DI
✅ Remplacement direct✓ En stock
$6.5 / unité
Voir la fiche technique →MT41K256M16HA-125
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$6.3636 / unité
Voir la fiche technique →K4B4G1646E-BYMA
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$14.3182 / unité
Voir la fiche technique →H5TC4G63AFR-PBA
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$3.9773 / unité
Voir la fiche technique →IS43TR16512B-125KBLI
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
NT5CC256M16CP-DI Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR3L SDRAM |
| Organisation de la mémoire | 256M x 16 |
| Total Density | 4Gb |
| Tension d'alimentation | 1.35V (1.283V to 1.45V) |
| Speed Grade | DDR3-1600 (CL11) |
| CAS Latency (CL) | 5, 6, 7, 8, 9, 10, 11 |
| Write Latency (CWL) | 5, 6, 7, 8, 9 |
| Internal Banks | 8 |
| Boîtier | VFBGA-96 |
| Interface | Differential clock (CK, CK#) |
| Burst Length | 8, 4 |
| On-Die Termination | Yes (programmable) |
| RoHS | Compliant |
| Process Technology | 70nm |
Configuration des broches de NT5CC256M16CP-DI
| Broche A1 | VDD — Power supply 1.35V |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche B1 | VSS — Ground |
| Broche B2 | DQ2 — Data input/output 2 |
| Broche B3 | DQ3 — Data input/output 3 |
| Broche C1 | CK — Clock input |
| Broche C2 | CK# — Complementary clock input |
| Broche C3 | CKE — Clock enable |
| Broche D1 | CS# — Chip select |
| Broche D2 | RAS# — Row address strobe |
| Broche D3 | CAS# — Column address strobe |
| Broche E1 | WE# — Write enable |
| Broche E2 | BA0 — Bank address 0 |
| Broche E3 | BA1 — Bank address 1 |
| Broche F1 | BA2 — Bank address 2 |
| Broche F2 | A0 — Address input 0 |
| Broche F3 | A1 — Address input 1 |
Applications typiques
NT5CC256M16CP-DI convient pour 6 applications: Laptop Memory Modules, Networking Equipment, Industrial Computing, Automotive Infotainment, Embedded Systems, Server Memory.
Laptop Memory Modules
The NT5CC256M16CP-DI is used in DDR3L SO-DIMM modules for laptops, providing 4GB capacity with low power consumption. Its 1.35V operation extends battery life, and the 256Mx16 organization supports dual-channel configurations. The VFBGA-96 package allows compact module design, and the industrial temperature range ensures reliability in various environments.
Recommandé
Networking Equipment
In routers and switches, the NT5CC256M16CP-DI provides high-bandwidth memory for packet buffering and routing tables. Its DDR3-1600 speed and 16-bit data bus deliver fast data transfer, while the 1.35V supply reduces power dissipation in dense line cards. The device's on-die termination improves signal integrity in high-speed designs, and the commercial temperature range suits indoor networking gear.
Recommandé
Industrial Computing
The NT5CC256M16CP-DI is ideal for industrial PCs and embedded controllers that require reliable memory in harsh environments. Its industrial temperature rating (if available) supports operation from -40C to +95C, and the 1.35V low-voltage operation reduces heat generation. The VFBGA-96 package withstands vibration and thermal cycling, making it suitable for factory automation and process control systems.
Recommandé
Automotive Infotainment
In automotive infotainment systems, the NT5CC256M16CP-DI provides memory for navigation, audio, and display processing. Its automotive temperature range (if available) ensures operation in extreme conditions, and the 1.35V supply is compatible with automotive power rails. The device's high-speed interface supports smooth multimedia playback, and its low power consumption helps manage vehicle battery load.
Recommandé
Embedded Systems
The NT5CC256M16CP-DI is used in embedded systems requiring high-density memory, such as single-board computers and IoT gateways. Its 4Gb capacity and 16-bit interface provide ample storage for operating systems and applications. The 1.35V operation is ideal for power-constrained designs, and the VFBGA-96 package fits compact PCBs. The device supports self-refresh mode for low-power standby.
Recommandé
Server Memory
The NT5CC256M16CP-DI can be used in entry-level server memory modules, providing cost-effective DDR3L capacity. Its 1.35V operation reduces data center power consumption, and the 256Mx16 organization supports ECC and non-ECC configurations. The device's high-speed interface meets the demands of cloud computing and virtualization, while the commercial temperature range is suitable for controlled server rooms.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour NT5CC256M16CP-DI — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | NT5CC256M16DP-DI | MT41K256M16HA-125 | K4B4G1646E-BYMA |
|---|---|---|---|---|
| Package | VFBGA-96 | VFBGA-96 | VFBGA-96 | VFBGA-96 |
| Brand | Nanya | Nanya | Micron | Samsung |
| Density | 4Gb | 4Gb | 4Gb | 4Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
Principaux différenciateurs
- Low voltage operation at 1.35V (vs Standard DDR3 at 1.5V)
- Wide temperature range support (vs Commercial-only DDR3L)
- 70nm process technology (vs Older process nodes)
Notes de conception
Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin to minimize power supply noise. Use a solid ground plane and route the differential clock traces (CK, CK#) with controlled impedance (typically 50 ohms single-ended, 100 ohms differential) and matched lengths to ensure signal integrity.
For DDR3L-1600 operation, maintain proper termination on data, address, and control signals. Use on-die termination (ODT) settings as recommended in the datasheet. Keep trace lengths matched within 0.5mm for data groups and 1mm for address/control to avoid timing violations. Reference the layout guidelines in the Nanya datasheet.
The NT5CC256M16CP-DI dissipates minimal power due to 1.35V operation, but ensure adequate airflow or a thermal pad for high-temperature environments. The VFBGA-96 package has a thermal resistance of [DATA_NEEDED] C/W. For automotive applications, verify the junction temperature stays within the specified range.
Informations de conformité
RoHS compliant per FindIC listing. AEC-Q100 not applicable for DRAM; automotive grade may be available but not confirmed.
