NT5CC256M16CP-DII - 4Gb DDR3L SDRAM 256Mx16 | Nanya
Référence : NT5CC256M16CP-DII ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $2.97 | $2,97 |
| 10 | $2.85 | $28,50 |
| 100 | $2.65 | $265,00 |
| 500 | $2.45 | $1 225,00 |
| 1 000 | $2.3 | $2 300,00 |
NT5CC256M16CP-DII Présentation
DDR3L (Double Data Rate 3 Low Voltage) SDRAM is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining similar performance. It is part of the DDR3 memory family, which uses double data rate signaling to transfer data on both edges of the clock, and is widely used in computing and embedded systems.
Key features include a 256Mx16 organization, 800MHz clock frequency (1600Mbps data rate), 1.35V nominal voltage, and industrial temperature grade. The device supports 8192 refresh cycles and features on-die termination (ODT) for improved signal integrity. The TFBGA-96 package with 0.8mm pitch enables compact PCB designs, and the halogen-free, RoHS-compliant construction meets modern environmental standards.
The NT5CC256M16CP-DII utilizes Nanya's 70nm DDR3 A-die process technology, offering a balance of performance and power efficiency. The 1.35V DDR3L parts are backward compatible with 1.5V DDR3 systems, providing design flexibility. The industrial temperature grade ensures reliable operation from -40°C to +95°C, making it suitable for harsh environments.
Typical applications include networking equipment (routers, switches), industrial automation controllers, embedded computing modules, and automotive infotainment systems. The high density and low power consumption make it ideal for memory-intensive applications where space and thermal budgets are constrained.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the PCB layout guidelines in the datasheet to maintain signal integrity at DDR3-1600 speeds. The ODT feature should be configured via mode registers to match the system's memory topology.
Alternatives de remplacement direct pour NT5CC256M16CP-DII — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec NT5CC256M16CP-DII (même facteur de forme et même empreinte) — différant par Package, Supply Voltage, Data Rate, Burst Length, CAS Latency (CL).
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
NT5CC256M16DP-DI
✅ Remplacement direct✓ En stock
$6.5 / unité
Voir la fiche technique →NT5CC256M16ER-DII
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
NT5CC256M16CP-DI
✅ Remplacement direct✓ En stock
$2.9 / unité
Voir la fiche technique →MT41K256M16TW-107
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$14.1 / unité
Voir la fiche technique →K4B4G1646E-BYMA
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$14.3182 / unité
Voir la fiche technique →IS43TR16512B-125KBLI
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
NT5CC256M16CP-DII Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR3L SDRAM |
| Organisation de la mémoire | 256M x 16 |
| Total Density | 4Gb |
| Clock Frequency | 800 MHz |
| Débit de données | 1600 Mbps |
| Tension d'alimentation | 1.35 V |
| Temperature Grade | Industrial |
| Boîtier | TFBGA-96 (9x13 mm, 0.8 mm pitch) |
| Number of Terminals | 96 |
| Refresh Cycles | 8192 |
| Access Time | 0.225 ns |
| Technology | CMOS |
| RoHS | Compliant |
| Sans halogène | Yes |
| Plage de température de fonctionnement | -40°C to +95°C |
Configuration des broches de NT5CC256M16CP-DII
| Broche A1 | VDD — Power supply |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche A4 | VSS — Ground |
| Broche A5 | DQ2 — Data input/output 2 |
| Broche A6 | DQ3 — Data input/output 3 |
| Broche A7 | VDD — Power supply |
| Broche A8 | DQ4 — Data input/output 4 |
| Broche A9 | DQ5 — Data input/output 5 |
| Broche A10 | VSS — Ground |
| Broche A11 | DQ6 — Data input/output 6 |
| Broche A12 | DQ7 — Data input/output 7 |
Applications typiques
NT5CC256M16CP-DII convient pour 6 applications: Networking Equipment, Industrial Automation, Embedded Computing, Automotive Infotainment, Data Center Storage, Medical Devices.
Networking Equipment
The NT5CC256M16CP-DII provides high-density, low-power memory for routers and switches. Its 4Gb density and 1600Mbps data rate support high-throughput packet processing, while the 1.35V operation reduces power consumption in always-on network devices. The industrial temperature grade ensures reliable operation in uncontrolled environments like telecom cabinets.
Recommandé
Industrial Automation
In industrial controllers and PLCs, the NT5CC256M16CP-DII offers reliable memory with industrial temperature rating. The 256Mx16 organization provides ample storage for control algorithms and data logging. Its low voltage and high density enable compact, energy-efficient designs for factory floor equipment that must operate 24/7 in harsh conditions.
Recommandé
Embedded Computing
For embedded computing modules, the NT5CC256M16CP-DII delivers high memory bandwidth in a small TFBGA-96 package. The 1600Mbps data rate supports demanding applications like real-time data processing and edge computing. The 1.35V supply reduces thermal load, making it suitable for fanless designs in space-constrained systems.
Recommandé
Automotive Infotainment
The NT5CC256M16CP-DII is suitable for automotive infotainment systems that require high-density memory for navigation, multimedia, and connectivity. Its industrial temperature grade covers automotive cabin environments, and the low power consumption helps meet vehicle energy budgets. The 4Gb density supports complex user interfaces and multiple applications simultaneously.
Recommandé
Data Center Storage
In data center storage controllers, the NT5CC256M16CP-DII provides high-density, low-power memory for caching and buffering. The 1600Mbps data rate enables fast data transfers, while the 1.35V operation reduces power consumption in large-scale deployments. The industrial temperature grade ensures reliability in server rooms with variable cooling.
Recommandé
Medical Devices
The NT5CC256M16CP-DII is used in medical imaging and monitoring equipment that require reliable, high-density memory. Its industrial temperature grade supports operation in clinical environments, and the low power consumption is beneficial for portable devices. The 4Gb density allows storage of large image datasets and patient records.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour NT5CC256M16CP-DII — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | NT5CC256M16DP-DI | NT5CC256M16ER-DII | MT41K256M16TW-107 |
|---|---|---|---|---|
| Package | TFBGA-96 | TFBGA-96 | TFBGA-96 | FBGA-96 |
| Brand | Nanya Technology | Nanya Technology | Nanya Technology | Micron Technology |
| Density | 4Gb | 4Gb | 4Gb | 4Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| RoHS | Compliant | Compliant | Compliant | Compliant |
Principaux différenciateurs
- Industrial temperature grade (vs NT5CC256M16CP-DI)
- Low voltage operation (vs MT41K256M16TW-107)
- Halogen-free and RoHS compliant (vs K4B4G1646E-BYMA)
Notes de conception
For DDR3L-1600 operation, maintain controlled impedance for data and address lines (typically 40-60 ohms single-ended). Keep trace lengths matched within 50 mils for data byte lanes and within 100 mils for address/command. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin to minimize power supply noise.
The industrial temperature grade allows operation up to 95°C case temperature. Ensure adequate airflow or heatsinking in high-ambient environments. The 1.35V supply reduces power dissipation compared to 1.5V DDR3, but at 1600Mbps data rates, the device can still generate significant heat. Monitor junction temperature in dense layouts.
Use on-die termination (ODT) to improve signal integrity on the data bus. Configure RTT_Nom via mode register MR1 to match the system's memory topology. For point-to-point connections, a 40-ohm ODT is typical. For multi-rank systems, adjust ODT and drive strength settings to minimize reflections and crosstalk.
Informations de conformité
RoHS compliant and halogen-free per datasheets.com and EEWORLD listings. AEC-Q100 not applicable for DRAM.
