K4RAH086VB-BCWM - DDR5 16Gb 5600Mbps SDRAM | Samsung Semiconductor
Référence : K4RAH086VB-BCWM ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $76.3636 | $76,36 |
| 10 | $55.1515 | $551,52 |
| 100 | $48.7879 | $4 878,79 |
| 500 | $46.6667 | $23 333,35 |
| 1 000 | $44.5455 | $44 545,50 |
K4RAH086VB-BCWM Présentation
A DDR5 SDRAM is a double-data-rate synchronous dynamic random-access memory belonging to the fifth DDR generation. In the memory hierarchy, it sits as a volatile main-memory DRAM below CPU caches, superseding DDR4 with a higher data rate, an on-die ECC engine, and two independent 32-bit sub-channels per module for improved channel efficiency. Samsung is one of the three leading global DDR5 DRAM suppliers alongside Micron and SK Hynix.
Key features of this device include 16 Gb density in a single x8 die, 5600 Mbps/pin bandwidth suitable for JEDEC DDR5-5600 class platforms, and a 1.1 V core voltage that delivers roughly 30% better power efficiency than DDR4. The BCWM speed bin and commercial temperature range target mainstream server, networking, and desktop platforms. On-die ECC (link ECC at the DQ receiver path) improves reliability without the pin cost of bus ECC.
Architecturally, DDR5 moves power management on-module via a PMIC and splits each die into independent sub-channels with burst length 32, reducing effective command latency on short transfers. The CA bus runs single-data-rate with a dedicated CA training mode; DLL-enabled operation is assumed for all timing specifications in the Samsung datasheet.
Typical applications include cloud and enterprise server DIMMs, high-performance desktop UDIMMs, networking line-card buffers, and advanced embedded compute modules where 5600 Mbps bandwidth and low 1.1 V power are required.
A key design consideration is signal integrity: DDR5's 5600 Mbps rate demands careful fly-by trace length matching, on-die termination (ODT) tuning, and reference voltage training in the memory controller.
This page synthesizes distributor stock data, drop-in alternatives, and practical DDR5 design notes not found in the manufacturer datasheet.
Alternatives de remplacement direct pour K4RAH086VB-BCWM — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec K4RAH086VB-BCWM (même facteur de forme et même empreinte) — différant par Interface, Package, Data Rate, Technology, Burst Length.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
K4RAH086VB-BCQK
✓ En stock
$41.0156 / unité
Voir la fiche technique →K4RAH086VB-BIWM
✓ En stock
$4.85 / unité
Voir la fiche technique →K4RAH086VP-BCWM
✓ En stock
Contactez-nous pour le prix
Voir la fiche technique →K4RBH046VM-BCWM
✓ En stock
$11.35 / unité
Voir la fiche technique →K4RAH086VB-BCWM Spécifications
| Type de mémoire | DDR5 SDRAM |
| Taille de mémoire | 16 Gb |
| Organisation de la mémoire | 2G x 8 |
| Débit de données | 5600 Mbps |
| Tension d'alimentation | 1.1 V |
| Interface | DDR5 (parallel) |
| Boîtier | FBGA-82 |
| Type de montage | Surface Mount |
| Technology | DRAM (volatile) |
| Speed Grade | BCWM |
| Température de fonctionnement | Commercial temperature range (per datasheet) |
| ECC | On-die ECC |
| Burst Length | 32 (BL32, DDR5 standard) |
| Statut RoHS | Compliant |
| Statut du cycle de vie | Active |
| Sub-channel Architecture | Dual independent 32-bit sub-channels (per DDR5 spec) |
Guide de configuration des broches du K4RAH086VB-BCWM fbga-82
Configuration des broches du K4RAH086VB-BCWM (boîtier fbga-82). La numérotation des broches, les fonctions et les schémas de connexion sont définis dans la fiche technique du fabricant. Consultez-la pour l'empreinte exacte et les directives de soudage.
Aucune donnée de brochage détaillée disponible pour K4RAH086VB-BCWM.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
K4RAH086VB-BCWM convient pour 6 applications: Enterprise Server DIMMs, High-Performance Desktop Memory, Networking Line Cards and Switches, Workstation and AI Edge Compute Modules, Embedded Compute and COM Express, Test, Measurement, and Data Acquisition Systems.
Enterprise Server DIMMs
The K4RAH086VB-BCWM fits DDR5 server RDIMM and LRDIMM designs targeting DDR5-5600 platforms from Intel Xeon and AMD EPYC. Its 16Gb 2G x 8 organization allows eight dies per 8GB rank with room for rank-dense module topologies, while 5600 Mbps/pin delivers the memory bandwidth server workloads demand. The 1.1 V supply cuts per-bit power roughly 30% versus DDR4, and Samsung's on-die ECC improves data integrity in always-on server environments. Placed on a registered DIMM behind the RCD and powered by the on-module 12V-to-1.1V PMIC, the die trains at 5600 Mbps with BL32 burst across dual 32-bit sub-channels. Verify the host platform QVL lists the BCWM bin before mass production.
Recommandé
High-Performance Desktop Memory
Desktop UDIMM designers use the K4RAH086VB-BCWM where DDR5-5600 class bandwidth benefits gaming, content creation, and compute-accelerated consumer platforms. Each 16Gb x8 die doubles per-rank density versus 8Gb DDR4 chips, so a single-rank 16GB UDIMM needs only eight components, simplifying layout and reducing BOM cost. The 1.1 V core plus on-module PMIC gives enthusiast platforms fine-grained voltage control, while dual 32-bit sub-channels improve effective latency on short BL32 bursts common in gaming workloads. Designers should length-match DQ/DQS to the 5600 Mbps training window and tune ODT profiles in the CPU integrated memory controller for stable operation across DIMM population configurations.
Recommandé
Networking Line Cards and Switches
Switch, router, and NIC line cards buffer packets in deep packet queues, where the K4RAH086VB-BCWM's 16Gb density and 5600 Mbps bandwidth support high-throughput forwarding planes. Its x8 organization pairs well with network ASICs and DPUs whose memory controllers map 64-bit or 72-bit (with ECC) DDR5 buses, and the dual sub-channel structure lets short control-plane accesses proceed on one sub-channel while bulk buffers use the other. The 1.1 V rail eases thermal budgets in dense 1U/2U chassis with limited airflow. Board designers should follow the ASIC vendor's fly-by CA routing rules and re-run DDR5 training after any SPD or ODT change to keep eye margins at 5600 Mbps.
Recommandé
Workstation and AI Edge Compute Modules
Workstation motherboards and AI edge-compute modules that run large local models benefit from the K4RAH086VB-BCWM's combination of 16Gb density and 5600 Mbps bandwidth, which raises aggregate memory capacity without sacrificing throughput. SoC-class and workstation-class DDR5 controllers train this x8 die across dual sub-channels, and on-die ECC plus link-ECC features protect long-running inference jobs against soft errors. Because 5600 Mbps edges are tighter than 4800 Mbps, PCB stacks should control impedance on DQ fly-through routing and reference-plane continuity. The commercial BCWM bin suits climate-controlled deployments; for industrial-temperature edge enclosures, specify the same-die K4RAH086VB-BIWM industrial variant instead.
Recommandé
Embedded Compute and COM Express
Computer-on-module (COM Express, SMARC) vendors adopt the K4RAH086VB-BCWM when their carrier ecosystem demands DDR5 bandwidth for industrial vision, robotics, and data-logging applications. Soldering sixteen 16Gb x8 dies yields 32 GB of on-module memory at 5600 Mbps, eliminating SO-DIMM sockets and their reliability concerns in vibration-prone environments. The 1.1 V supply simplifies the module's power tree, and on-die ECC supports the long service life expected in industrial settings. Layout teams should keep DQ/DQS length skew within the 5600 Mbps timing budget and pre-characterize training margins across the full temperature range; where the environment exceeds the commercial bin, substitute the industrial-binned K4RAH086VB-BIWM in the identical FBGA-82 footprint.
Recommandé
Test, Measurement, and Data Acquisition Systems
High-speed oscilloscopes, logic analyzers, and streaming data-acquisition systems require deep capture memory with sustained write bandwidth, a match for the K4RAH086VB-BCWM's 16Gb density and 5600 Mbps per-pin rate. Multiple x8 dies on a wide DDR5 bus provide the acquisition engines tens of GB of continuous-write buffering, and the BL32 dual sub-channel architecture keeps short control transactions from stalling bulk waveform writes. The 1.1 V rail reduces instrument internal power dissipation, aiding fanless and low-noise designs. Instrument makers should validate ODT and drive-strength settings at both temperature extremes and re-verify 5600 Mbps eye diagrams after any memory-clock or termination-profile firmware update.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour K4RAH086VB-BCWM — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | K4RAH086VB-BCQK | K4RAH086VB-BIWM | K4RAH086VP-BCWM | K4RBH046VM-BCWM |
|---|---|---|---|---|---|
| Package | FBGA-82 | FBGA-82 - same | FBGA-82 - same | FBGA-82 - same | FBGA-82 - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Size | 16 Gb | 16 Gb | 16 Gb | 16 Gb | 16 Gb |
| Organization | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 4 |
| Memory Type | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM |
| Data Rate Class | 5600 Mbps | 5600 Mbps class | 5600 Mbps class | 5600 Mbps class | 5600 Mbps class |
| Supply Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| Lifecycle Status | Active | Active | Active | Active | Active |
Principaux différenciateurs
- Deep global availability (vs K4RAH086VB-BIWM)
- Same-die industrial option available (vs K4RAH086VB-BIWM)
- x8 organization with bus-ECC-friendly topology (vs K4RBH046VM-BCWM)
Notes de conception
At 5600 Mbps, DDR5 DQ/DQS eyes are the tightest constraint in the design. Route DQ/DQS with controlled impedance (typically 40 ohm per DDR5 guidelines), keep fly-through stubs to zero, and follow the CPU/ASIC vendor's DDR5 reference layout for CA fly-by skew targets. The Samsung datasheet's CA/CS compliance mask defines the receiver voltage/timing window your PHY must meet in single-data-rate CA mode. Validate eye diagrams with IBIS-AMI models at both ODT extremes before committing the PCB.
The K4RAH086VB-BCWM operates from a 1.1 V VDD rail, which in module designs is generated by the on-module PMIC (per DDR5 standards) rather than the motherboard. Ensure the PMIC can supply the peak IDD at 5600 Mbps for the full die count plus 20% margin, and follow Samsung's decoupling network recommendation from the K4RAH0x6VB datasheet. Estimated: a 16GB rank of eight dies drawing typical 16Gb DDR5 operating current requires low-impedance mid-plane power delivery to avoid rail droop during all-bank-write bursts.
Do not mix speed bins (e.g., BCWM and BIWM) in the same rank unless your memory controller QVL explicitly supports it; DDR5 training tables are bin-specific and mixed bins can fail write leveling. Also remember the BCWM is a commercial-temperature bin - for -40 C to +85 C ambient designs, substitute the industrial-binned K4RAH086VB-BIWM, which is footprint-identical. Always re-run memory training after any firmware, ODT, or SPD change to keep 5600 Mbps margins valid.
Informations de conformité
RoHS compliance consistent with Samsung current-production DDR5 portfolio; explicit certificate not present in verified web data - confirm via Samsung product compliance portal for exact date code.
