K4RAH165VB-BCQK - 16Gb DDR5 SDRAM 4800Mbps 1.1V | Samsung
Référence : K4RAH165VB-BCQK ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $0 | $0,00 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1 000 | $0 | $0,00 |
K4RAH165VB-BCQK Présentation
DDR5 SDRAM (Double Data Rate 5 synchronous dynamic random-access memory) is the fifth generation of the JEDEC DDR memory hierarchy, succeeding DDR4 in servers, PCs, and embedded systems. Within the memory taxonomy it sits under DRAM -> synchronous DRAM -> DDR SDRAM -> DDR5, providing higher bandwidth, bank-group architecture, and lower operating voltage per generation.
Key features include on-die ECC (error correction code) for improved data reliability, CRC and write leveling functions for signal integrity at high data rates, auto self-refresh and asynchronous reset for power and control flexibility, and ZQ calibration for output driver impedance accuracy. The operating temperature range is 0C to +85C.
Technically, the device implements the DDR5 bank-group architecture with independent bank group activation, an on-die termination scheme, and DLL-enabled mode timing as described in the Samsung 16Gb DDR5 datasheet (Rev 1.x series). The 1.1V VDD reduces power consumption by roughly 30% versus DDR4 at comparable speeds, while the x16 organization allows 16-bit-wide memory channels in space-constrained designs.
Typical applications include DDR5 memory modules (UDIMM/SODIMM Downgraded DRAM tiers), desktop and notebook computing platforms, networking equipment, and advanced embedded controller systems requiring high-density memory.
Design consideration: DDR5 requires a dedicated PMIC (5V auxiliary power management IC) on the module and precise length-matched routing; verify controller compatibility with 4800 Mbps speed bins and on-die ECC behavior in your memory initialization code.
This page synthesizes distributor availability, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Alternatives de remplacement direct pour K4RAH165VB-BCQK — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec K4RAH165VB-BCQK (même facteur de forme et même empreinte) — différant par Data Rate, Package, Interface, Density, Operating Temperature.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
K4RAH165VB-BCWM
✅ Remplacement direct✓ En stock
$9.92 / unité
Voir la fiche technique →K4RAH086VB-BCQK
✅ Remplacement direct✓ En stock
$41.0156 / unité
Voir la fiche technique →K4RAH086VP-BCWM
✅ Remplacement direct✓ En stock
Contactez-nous pour le prix
Voir la fiche technique →H58G76BK8VX106N
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
H58G78CK8BX185N
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
K4RAH165VB-BCQK Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR5 SDRAM |
| Taille de mémoire | 16 Gb |
| Memory Organization | 1G x 16 |
| Memory Interface | Parallel |
| Débit de données | 4800 Mbps |
| Supply Voltage (VDD) | 1.1 V |
| Error Correction | On-die ECC |
| Caractéristiques | Auto self-refresh, asynchronous reset, on-chip ECC, write leveling, CRC, ZQ calibration |
| Température de fonctionnement | 0C to +85C |
| Boîtier | 106-ball FBGA |
| Type de montage | Surface Mount |
| Memory Format | DRAM (volatile) |
| Packaging | Tray |
| Statut du cycle de vie | Active |
Guide de configuration des broches du K4RAH165VB-BCQK 106-ball fbga
Configuration des broches du K4RAH165VB-BCQK (boîtier 106-ball fbga). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour K4RAH165VB-BCQK.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
K4RAH165VB-BCQK convient pour 6 applications: DDR5 Memory Modules (UDIMM/SODIMM), Desktop and Notebook Computing Platforms, Networking and Communication Equipment, Server and Data Center Memory, Advanced Embedded and Industrial Controllers, Consumer Electronics and Smart Devices.
DDR5 Memory Modules (UDIMM/SODIMM)
The K4RAH165VB-BCQK is a core building block for DDR5 UDIMM and SODIMM modules in desktop and notebook computing. Its 16Gb density in a 1G x 16 organization lets module makers reach high capacities with fewer devices - eight x16 chips yield a 16GB module with a 128-bit-wide main channel when paired across ranks. Samsung's on-die ECC improves module-level reliability without host overhead, while write leveling and ZQ calibration ensure signal integrity at 4800 Mbps. DDR5 modules additionally require the on-module 5V auxiliary PMIC for DCA/DFE power, simplifying motherboard power design. Because the 106-ball FBGA footprint is shared across Samsung, SK Hynix, and Micron x16 DDR5 parts, module designers can implement dual-sourcing on a single PCB.
Recommandé
Desktop and Notebook Computing Platforms
PC platforms with Intel or AMD DDR5 memory controllers use the K4RAH165VB-BCQK for soldered-down memory or module integration. The 1.1V VDD cuts memory subsystem power versus DDR4 by roughly 30% at comparable throughput (per Samsung's DDR5 family data), directly extending battery runtime in notebooks and reducing thermal load in small-form-factor desktops. The x16 organization suits cost-optimized consumer designs that avoid full x8 ECC channel widths, and 4800 Mbps operation matches mainstream JEDEC DDR5 speed bins supported by current chipsets. Board designers should follow Samsung's routing guidelines for length matching and on-die termination settings during memory training to achieve stable operation at rated speed across the 0C to +85C commercial temperature range.
Recommandé
Networking and Communication Equipment
Switches, routers, and 5G infrastructure line cards require large, high-bandwidth buffer memory, making the 16Gb DDR5 K4RAH165VB-BCQK a strong fit. The 1G x 16 organization with 4800 Mbps data rate provides 9.6 GB/s peak bandwidth per device, sufficient for deep packet buffers at multi-gigabit line rates. CRC and on-die ECC address the bit-error sensitivity of long, high-speed memory buses in electrically noisy rack environments, and the asynchronous reset function simplifies system-level power sequencing and fault recovery. Sourcememorychips explicitly positions this Samsung DDR5 device for server, networking, and advanced embedded applications requiring stable long-term supply. Verify controller support for DDR5 training algorithms and plan for industrial temperature requirements if the deployment environment exceeds the 0C to +85C commercial range.
Recommandé
Server and Data Center Memory
Data center platforms benefit from the K4RAH165VB-BCQK's combination of 16Gb density and DDR5 efficiency. Samsung's DDR5 family delivers up to 7200 Mbps at the top of its range and roughly 30% better power efficiency than DDR4, reducing the per-GB energy cost of large memory pools - a key total-cost-of-ownership metric at hyperscale. On-die ECC improves RAS characteristics in dense deployments, while CRC protects data integrity at high bus speeds. The BCQK speed/temperature class targets mainstream server channels; higher-class suffixes exist for performance tiers. When designing server DIMMs, coordinate the on-module PMIC with host power management and validate memory training across population configurations, since DDR5 introduces per-channel sub-channel architecture that changes training topology versus DDR4.
Recommandé
Advanced Embedded and Industrial Controllers
High-performance embedded systems - industrial PCs, edge AI gateways, and test instruments - adopt the K4RAH165VB-BCQK where DDR4 bandwidth is exhausted. The DDR5 interface at 4800 Mbps gives embedded SoCs and FPGA-based controllers substantially more memory bandwidth per pin, and the x16 organization halves the component count versus x8 parts at equal capacity, simplifying layout on dense boards. Auto self-refresh supports low-power standby states in intermittently active edge devices, and ZQ calibration maintains output impedance accuracy across the 0C to +85C operating range typical of commercial-grade industrial environments. For industrial designs, confirm long-term availability and traceability with your distributor - LimChip notes buyers commonly source this exact Samsung suffix to keep manufacturer consistency across DDR-based industrial platforms.
Recommandé
Consumer Electronics and Smart Devices
Set-top boxes, smart displays, gaming peripherals, and high-definition video devices use the K4RAH165VB-BCQK when 4K/8K media pipelines need substantial frame-buffer memory. Sixteen gigabits per chip allows 2 GB of system memory with a single rank of eight x16 devices, minimizing BOM cost and PCB area - critical in compact consumer housings. The 1.1V supply reduces overall platform power for energy-regulation compliance, and DDR5's bank-group architecture sustains the random-access patterns typical of video decode and UI compositing workloads. Samsung's high-volume DDR5 production ensures consumer-grade pricing and supply continuity, while on-die ECC quietly improves field reliability without host firmware changes. Commercial temperature rating (0C to +85C) covers typical indoor consumer operating environments.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour K4RAH165VB-BCQK — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | K4RAH165VB-BCWM | K4RAH086VB-BCQK | K4RAH086VP-BCWM | H58G76BK8VX106N | H58G78CK8BX185N |
|---|---|---|---|---|---|---|
| Package | 106-ball FBGA | 106-ball FBGA - same | 106-ball FBGA - same | 106-ball FBGA - same | 106-ball FBGA - same | 106-ball FBGA - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | SK Hynix | SK Hynix |
| Memory Technology | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | 16 Gb | 8 Gb | 8 Gb | 16 Gb | 16 Gb |
| Organization | 1G x 16 | 1G x 16 | 512M x 16 | 512M x 16 | 1G x 16 | 1G x 16 |
| Supply Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| On-die ECC | Yes | Yes | Yes | Yes | Yes | Yes |
Principaux différenciateurs
- Full 16Gb density in x16 organization (vs K4RAH086VB-BCQK)
- DDR5 power efficiency with on-die ECC (vs K4A4G165WF-BCTD)
- Cross-brand second source on same footprint (vs H58G76BK8VX106N)
Notes de conception
DDR5 memory routing at 4800 Mbps demands strict fly-by topology for address/command and length-matched data groups. Keep DQ/DQS/DM traces length-matched within tight intra-byte-group skew limits, reference continuous ground planes, and follow the Samsung DDR5 design guide for on-die termination (ODT) settings. For soldered-down x16 designs, maintain solid 1.1V power planes with dense via stitching from the FBGA ball field to the plane to minimize simultaneous switching noise during burst writes.
The K4RAH165VB-BCQK operates from a nominal 1.1V VDD; provide a low-noise regulator with adequate transient response for burst refresh and activate currents. Estimated: with 16Gb x16 devices at 4800 Mbps, peak per-device current during activation bursts can reach ampere-class transients, so local bulk (22-47 uF) plus high-frequency (0.1 uF per device) decoupling is recommended. DDR5 DIMM applications must also implement the on-module 5V auxiliary PMIC per the DDR5 standard; verify the PMIC's VDDQ tracking and power-fault behavior.
Do not substitute DDR4 parts (e.g., K4A4G165WF series) into DDR5 sockets - DDR5 uses different command encoding, sub-channel architecture, on-die ECC, and training sequences, and is not pin-compatible despite similar footprints. After any second-source change (Samsung to SK Hynix), re-run full DDR5 memory training in firmware since training algorithm behavior differs by vendor. Also confirm the suffix speed bin matches your controller configuration: BCQK and BCWM encode different speed/temperature classes within the same die family.
Informations de conformité
Compliance declarations were not explicitly present in the verified web data for this specific suffix as of 2026-09-04; confirm via LCSC product page C5359119 or Samsung environmental documentation.
