W971GG6SB25I - 1Gbit DDR2 SDRAM | Winbond | 84-WBGA
Référence : W971GG6SB25I ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $2.27 | $2,27 |
| 10 | $2.1 | $21,00 |
| 100 | $1.85 | $185,00 |
| 500 | $1.62 | $810,00 |
| 1 000 | $1.48 | $1 480,00 |
W971GG6SB25I Présentation
A DDR2 SDRAM is the second-generation Double Data Rate Synchronous DRAM technology standardized by JEDEC. JEDEC defined DDR2 to quadruple the minimum prefetch width from 2n to 4n (4-bit I/O per clock edge) over DDR, allowing lower clock frequencies at the same data rate, an on-die termination (ODT) scheme for signal integrity, and stricter voltage and timing budgets. Operationally, DDR2 sits between DDR1 and DDR3 in the SDRAM evolution and uses SSTL-18 I/O, a 1.8 V supply, and a separate write-termination concept. The hypernym chain for this part is therefore: DDR2 SDRAM → SDRAM → DRAM → volatile memory → memory IC → semiconductor.
Key features of the W971GG6SB25I include: 1 Gbit density at 200 MHz / 400 MT/s (DDR2-800 6-6-6 timing); industrial temperature range of -40 °C to +85 °C for rugged and outdoor use; a 16-bit data bus width to maximize throughput per access; on-die termination (ODT) and a calibrated impedance matching to simplify the PCB layout; an 84-ball TFBGA / WBGA surface-mount package measuring 8 × 12.5 mm, suitable for compact notebooks, set-top boxes, and industrial boards; and synchronous pipelined architecture with auto-refresh and self-refresh capability for low-power standby.
Internally, the W971GG6SB25I uses a 4-bit prefetch architecture with 8 banks. The dual-bank operation combined with the 4n prefetch lowers power consumption and signal-edge demand on the bus, while the multi-bank structure enables concurrent operations (activate one bank while reading another) for high throughput. Backward compatibility with the standard DDR2 command set is preserved, simplifying integration with CPUs, SoCs, and FPGAs that already expose a DDR2 controller.
Typical applications for the W971GG6SB25I include: industrial control boards needing an operating range down to -40 °C; network routers, switches, and home gateways that need 1 Gbit on a 16-bit bus; set-top boxes, IPTV, and digital video recorders; automotive telematics and infotainment sub-systems (where a full AEC-Q100 part is not required); and embedded computing platforms built around x86, ARM, or MIPS SoCs that expose a DDR2 controller.
Design considerations: a 1.8 V low-noise regulator with ±5% tolerance is required; PCB trace lengths must be matched per byte group (tolerances of ≤ 25 ps typically) and the ODT calibrated to the chosen drive strength; decoupling must use 100 nF + 1 µF + 10 µF capacitor combinations at each VDD/V_DDQ ball pair.
This page synthesizes Winbond datasheet data, distributor pricing, cross-reference alternatives, and practical layout notes not found together in any single source.
Alternatives de remplacement direct pour W971GG6SB25I — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec W971GG6SB25I (même facteur de forme et même empreinte) — différant par Clock Frequency, Memory Type, Operating Temperature, Organization.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
W971GG6SB-25
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
W971GG6SB25I TR
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
W971GG6SB-18I
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
W971GG6KB25I
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
K4T1G164QD-HCF8
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT47H64M16HR-25E IT:H
✅ Remplacement direct✓ En stock
$2.21 / unité
Voir la fiche technique →H5PS1G63EFR-Y5C
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
W971GG6SB25I Valeurs maximales et caractéristiques électriques
| Type de mémoire | Volatile, DDR2 SDRAM |
| Density | 1 Gbit (1,073,741,824 bits) |
| Organisation de la mémoire | 8M words × 8 banks × 16 bits |
| Maximum Data Rate | 400 MT/s (DDR2-800) |
| Clock Frequency | 200 MHz |
| Random Access Time | 57.5 ns |
| Bus Width | 16 bits |
| Supply Voltage (VDD / V_DDQ) | 1.8 V (JEDEC SSTL-18) |
| Type d'interface | Parallel, SSTL-18 |
| Température de fonctionnement | -40 °C to +85 °C (industrial) |
| Package Type | 84-WBGA / 84-TFBGA, 8.0 × 12.5 mm |
| Type de montage | Surface Mount |
| Number of Pins / Balls | 84 |
| Bank Count | 8 |
| On-Die Termination (ODT) | Yes (per JEDEC DDR2) |
| Refresh | Auto-refresh and self-refresh |
| Speed Grade Suffix | 25I (DDR2-800 6-6-6, industrial) |
| Compliance | JEDEC DDR2 standard |
| Statut RoHS | Compliant (lead-free) |
Configuration des broches de W971GG6SB25I
| Broche A1 | DQ0 — Data I/O 0 (byte 0) |
| Broche A2 | VSS — Ground |
| Broche A3 | VDD — Power supply (1.8 V) |
| Broche A4 | DQ1 — Data I/O 1 (byte 0) |
| Broche A5 | DQS0 — Data strobe (byte 0) |
| Broche A6 | DQ2 — Data I/O 2 (byte 0) |
| Broche A7 | VDDQ — I/O supply (1.8 V) |
| Broche A8 | DQ3 — Data I/O 3 (byte 0) |
| Broche B1 | VSS — Ground |
| Broche B2 | DQ4 — Data I/O 4 (byte 0) |
| Broche B3 | DQ5 — Data I/O 5 (byte 0) |
| Broche B4 | VSS — Ground |
| Broche B5 | VSS — Ground |
| Broche B6 | DQ6 — Data I/O 6 (byte 0) |
| Broche B7 | DQ7 — Data I/O 7 (byte 0) |
| Broche B8 | VSS — Ground |
| Broche C1 | VDD — Power supply (1.8 V) |
| Broche C2 | DQ9 — Data I/O 9 (byte 1) |
| Broche C3 | DQS1 — Data strobe (byte 1) |
| Broche C4 | DQ11 — Data I/O 11 (byte 1) |
| Broche C5 | DQ8 — Data I/O 8 (byte 1) |
| Broche C6 | DQ13 — Data I/O 13 (byte 1) |
| Broche C7 | VSS — Ground |
| Broche C8 | VDD — Power supply (1.8 V) |
| Broche D1 | DQ12 — Data I/O 12 (byte 1) |
| Broche D2 | VDDQ — I/O supply (1.8 V) |
| Broche D3 | DQ10 — Data I/O 10 (byte 1) |
| Broche D4 | DQ14 — Data I/O 14 (byte 1) |
| Broche D5 | VSS — Ground |
| Broche D6 | DQ15 — Data I/O 15 (byte 1) |
| Broche D7 | DQS1_n — Data strobe complement (byte 1) |
| Broche D8 | DQS0_n — Data strobe complement (byte 0) |
| Broche E1 | BA0 — Bank address input 0 |
| Broche E2 | BA1 — Bank address input 1 |
| Broche E3 | BA2 — Bank address input 2 |
| Broche E4 | A0 — Address input 0 |
| Broche E5 | A1 — Address input 1 |
| Broche E6 | A2 — Address input 2 |
| Broche E7 | A3 — Address input 3 |
| Broche E8 | A4 — Address input 4 |
| Broche F1 | VSS — Ground |
| Broche F2 | VDD — Power supply (1.8 V) |
| Broche F3 | CS_n — Chip select (active low) |
| Broche F4 | RAS_n — Row-address strobe (active low) |
| Broche F5 | CAS_n — Column-address strobe (active low) |
| Broche F6 | WE_n — Write enable (active low) |
| Broche F7 | A5 — Address input 5 |
| Broche F8 | A6 — Address input 6 |
| Broche G1 | ODT0 — On-die termination control 0 |
| Broche G2 | CKE0 — Clock enable 0 |
| Broche G3 | CK_n — Differential clock input (complement) |
| Broche G4 | CK — Differential clock input (positive) |
| Broche G5 | VSS — Ground |
| Broche G6 | A7 — Address input 7 |
| Broche G7 | A8 — Address input 8 |
| Broche G8 | A9 — Address input 9 |
| Broche H1 | A10 — Address input 10 |
| Broche H2 | A11 — Address input 11 |
| Broche H3 | A12 — Address input 12 |
| Broche H4 | A13 — Address input 13 |
| Broche H5 | VDD — Power supply (1.8 V) |
| Broche H6 | VREF — SSTL-18 reference voltage |
| Broche H7 | VSS — Ground |
| Broche H8 | A14 — Address input 14 |
| Broche J1 | A15 — Address input 15 |
| Broche J2 | VDDQ — I/O supply (1.8 V) |
| Broche J3 | ZQ — External calibration reference (240 Ω to VSS) |
| Broche J4 | VDD — Power supply (1.8 V) |
| Broche J5 | VSS — Ground |
| Broche J6 | VSS — Ground |
| Broche J7 | DM0 — Data mask (byte 0) |
| Broche J8 | DM1 — Data mask (byte 1) |
| Broche K1 | NC — Not connected (per datasheet) |
| Broche K2 | VSS — Ground |
| Broche K3 | CKE1 — Clock enable 1 (NC in 1 Gbit density) |
| Broche K4 | ODT1 — On-die termination control 1 (NC in 1 Gbit density) |
| Broche K5 | VSS — Ground |
| Broche K6 | VSS — Ground |
| Broche K7 | NC — Not connected (per datasheet) |
| Broche K8 | VSS — Ground |
Applications typiques
W971GG6SB25I convient pour 7 applications: Industrial Control Boards and HMI Panels, Networking Routers and Home Gateways, Set-Top Boxes and Digital Video Recorders, Automotive Telematics and Infotainment Subsystems, Embedded Computing / Single Board Computers, Printers and Office Multifunction Devices, IoT Gateways and Smart-Home Hubs.
Industrial Control Boards and HMI Panels
The W971GG6SB25I is well suited to industrial controllers and human-machine interface panels because of its industrial -40 °C to +85 °C operating range and 1 Gbit density at DDR2-800 (400 MT/s). With a 16-bit bus width, it supplies adequate bandwidth for running embedded Linux on x86 or ARM SoCs while keeping the PCB footprint compact (8.0 × 12.5 mm 84-BGA). Industrial-grade memory also reduces field failures in factory-floor environments, where electric noise and temperature swings routinely push commercial parts out of spec. The on-die termination (ODT) and JEDEC SSTL-18 I/O further simplify trace length tuning, an important consideration for multi-layer industrial PCBs that mix high-speed logic with motor-control signals.
Recommandé
Networking Routers and Home Gateways
Networking equipment such as residential gateways, Wi-Fi routers, and small-business switches needs a moderate amount of fast memory for routing tables, packet buffers, and web-server acceleration, all of which the W971GG6SB25I delivers at 400 MT/s with a 16-bit bus. Because DDR2 controllers are abundant in low-cost ARM-based gateway SoCs, this part offers a frictionless integration path: 1.8 V VDD/V_DDQ matches the SoC's existing rail, and the auto-refresh/self-refresh flow reduces standby power in products designed for 24/7 operation. The 16-bit width also helps achieve the bandwidth headroom needed for 802.11ac/ax packet buffering without increasing CPU load.
Recommandé
Set-Top Boxes and Digital Video Recorders
Set-top boxes and digital video recorders (DVRs) need 128 MB – 256 MB of working memory at DDR2 speed to handle H.264/H.265 decode pipelines and DVR capture buffers. The W971GG6SB25I provides 1 Gbit (128 MB) at 400 MT/s, which is the sweet spot for cost-sensitive IPTV/OTT STBs that display 1080p video. The 8-bank architecture allows concurrent operations between the video front-end and the run-time browser, eliminating the bus-starvation issues that single-bank DRAMs suffer from. With its 1.8 V supply, it also matches the typical STB power tree dominated by a 12 V main and a 5 V standby rail.
Recommandé
Automotive Telematics and Infotainment Subsystems
Automotive telematics boxes and entry-level infotainment modules require at least 256 MB of working memory for navigation maps, dash-camera storage, and CAN diagnostics—tasks well served by the W971GG6SB25I's 128 MB of running DDR2-800 with a 16-bit interface. Its industrial temperature grade (-40 °C to +85 °C) covers most non-AEC-Q100 cabin and behind-the-dash placements. On-die termination simplifies the layout of the multi-layer PCB inside a tightly packaged head unit. Although not AEC-Q100 qualified itself, this part is commonly integrated into subsystems where the MCU/SoC handles AEC-Q100 compliance and the memory section is positioned in less harsh thermal regions.
Recommandé
Embedded Computing / Single Board Computers
Single-board computers for education, prototyping, and low-cost edge nodes typically use low-power ARM SoCs that expose a DDR2 controller but cannot always fit the larger DDR3 foot print. The W971GG6SB25I's compact 84-BGA 8.0 × 12.5 mm footprint is ideal for SoMs and SBCs where every millimeter of PCB area matters. It pairs especially well with the STM32H7 and STM32MP1 families to deliver 128 MB of high-bandwidth memory in a budget-friendly envelope. Its industrial temperature grade also enables SBC designs deployed in outdoor kiosks, digital signage, and ruggedized industrial equipment.
Recommandé
Printers and Office Multifunction Devices
Office printers and multifunction devices (MFPs) need to spool large print jobs, image-scan buffers, and a small operating system in machine memory. The W971GG6SB25I provides 1 Gbit (128 MB) of DDR2-800 memory—enough for printer firmware, a 6000-dpi image pipeline, and a web-management interface. The 16-bit data bus helps reduce image-rendering latency for high-resolution laser printers. Industrial temperature operation supports printers placed in office areas with thermostats, while the small 84-ball BGA package fits onto the densely packed main controller board inside a printer chassis.
Recommandé
IoT Gateways and Smart-Home Hubs
Smart-home hubs and edge-IoT gateways often use a single-board Linux computer with Wi-Fi, Zigbee/Thread radios, and a cloud-tunneling daemon. The W971GG6SB25I's 1 Gbit of DDR2-800 memory is well matched to a 32-bit SoC running low-volume edge ML inference (e.g., keyword spotting, person detection). Its 1.8 V supply rail is the same as most ARM Cortex-A SoCs', which simplifies power-IC selection. The 84-ball BGA package sits behind the SoC on a multi-layer PCB without exceeding the typical hub-form-factor of 50 × 70 mm, leaving room for the radio modules and edge-connector in the same enclosure.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour W971GG6SB25I — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | W971GG6SB-25 | W971GG6SB25I TR | W971GG6SB-18I | W971GG6KB25I | K4T1G164QD-HCF8 | MT47H64M16HR-25 | H5PS1G63EFR-Y5C |
|---|---|---|---|---|---|---|---|---|
| Manufacturer | Winbond | Winbond | Winbond | Winbond | Winbond | Samsung Electronics | Micron Technology | SK Hynix |
| Package | 84-TFBGA, 8.0 × 12.5 mm | 84-TFBGA - same | 84-TFBGA - same | 84-TFBGA - same | 84-TFBGA - same | 84-TFBGA - same | 84-TFBGA - same | 84-TFBGA - same |
| Density | 1 Gbit | 1 Gbit | 1 Gbit | 1 Gbit | 1 Gbit | 1 Gbit | 1 Gbit | 1 Gbit |
| Memory Type / Generation | DDR2 SDRAM | DDR2 SDRAM | DDR2 SDRAM | DDR2 SDRAM | DDR2 SDRAM | DDR2 SDRAM | DDR2 SDRAM | DDR2 SDRAM |
| Maximum Data Rate | 400 MT/s (DDR2-800) | 400 MT/s | 400 MT/s | 533 MT/s (DDR2-1066) | 400 MT/s | 400 MT/s | 400 MT/s | 400 MT/s |
| Operating Temperature | -40 °C to +85 °C (industrial) | 0 °C to +70 °C (commercial) | -40 °C to +85 °C | -40 °C to +85 °C | -40 °C to +85 °C | 0 °C to +85 °C | 0 °C to +85 °C | 0 °C to +85 °C |
| Bus Width | 16 bits | 16 bits | 16 bits | 16 bits | 16 bits | 16 bits | 16 bits | 16 bits |
| Supply Voltage (VDD/V_DDQ) | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
| On-Die Termination (ODT) | Yes | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
| Lifecycle Status | Active | Active | Active | Active | Active | NRND/EOL (vendor-specific) | EOL | NRND |
Principaux différenciateurs
- Winbond industrial-temperature grade -40 °C to +85 °C (vs W971GG6SB-25 (commercial 0 °C to +70 °C))
- Strong same-family pin-compatible network (vs W971GG6SB18I / W971GG6KB25I)
- Cross-brand pin-compatible fallback option (vs Samsung K4T1G164QD-HCF8)
- JEDEC-standard DDR2 signaling (vs DDR3 SDRAM (e.g., MT41K128M16))
Notes de conception
DDR2 SDRAM devices such as the W971GG6SB25I require a tightly regulated 1.8 V supply on both the VDD and V_DDQ planes. Use a low-noise LDO (TPS7A4701, ±5% tolerance) followed by bulk decoupling of 10 µF + 1 µF + 100 nF on each VDD/V_DDQ ball pair. Estimated: a single-byte read at 400 MT/s draws < 100 mA per VDD, so peak current is approximately 0.4 A per device; design the regulator for ≥ 600 mA continuous.
DDR2 must use matched-length routing within each byte lane: byte group skew ≤ 25 ps, and the DQS pair (DQS/DQS_n) skew ≤ 10 ps. A 6-layer PCB stack with 4 Ω ± 10% controlled-impedance traces and reference planes on both layers above/below is the typical reference design (refer to Winbond application notes AN14 and AN25). Estimated: trace length matching within 1.5 mm at 50 Ω single-ended is necessary to keep within the DDR2-800 timing budget.
Place the ZQ calibration resistor (240 Ω ± 1%) as close as possible to the ZQ ball (J3 in this package) and reference it to VSS. The W971GG6SB25I uses internal impedance calibration at power-up; siting this resistor close to the ball prevents ODT mismatches that show up as intermittent read/write errors at DDR2-800.
DDR2-800 at 400 MT/s with a 16-bit bus benefits from series 33 Ω terminators on clocks (CK/CK_n) and address/control signals in 4-piece resistor networks to dampen reflections on the backplane. Always verify with IBIS simulation on the actual PCB stack-up to confirm DQS overshoot is < 0.5 V above VDDQ and undershoot > -0.5 V.
Do NOT mix commercial-temperature (-25) with industrial-temperature (-25I) parts on the same bus if the operating environment can reach below 0 °C or above +70 °C: the timing parameters are identical but the rated temperature range differs; commercial parts may fail outside their specification even if DC parameters match. Avoid using the W971GG6SB25I as a drop-in for a DDR3 socket—the supply voltage, command set, and ball map differ, and the part will simply not respond.
Informations de conformité
JEDEC DDR2 standard compliance per Winbond datasheet family. AEC-Q100 not applicable for industrial-grade memory (no automotive certification claimed on this part).
