IPG20N06S2L65ATMA1 - Dual N-Ch 55V 20A MOSFET | Infineon
MPN: IPG20N06S2L65ATMA1 ✓ פעילIPG20N06S2L65ATMA1 סקירה
A MOSFET array (also called a dual MOSFET or co-pack) integrates two independent N-channel enhancement-mode transistors in a single thermally enhanced package. As a member of the power MOSFET hierarchy (power MOSFET -> MOSFET array -> discrete semiconductor), it allows designers to replace two DPAK components with one SuperSO8 footprint, saving PCB area and reducing parasitic loop inductance in half-bridge, synchronous, or parallel high-side/low-side topologies.
Key features include low RDS(on) of 65 mΩ typical at VGS=10 V for minimal conduction loss, logic-level compatibility for direct MCU GPIO drive, integrated N-channel pair for symmetric switching, and a SuperSO8/TDSON-8 EP pad that delivers a theta_JA near 30 C/W when properly soldered to a sufficient copper pour. The array is fully avalanche-rated, allowing unclamped inductive switching in solenoid drive and LED PWM dimming circuits.
Architecturally, the IPG20N06S2L-65 uses Infineon's OptiMOS-T2 55 V planar trench process, optimized for low gate charge and fast switching transitions. With Qg in the single-digit nC range, gate-drive losses are minimal even at 50 kHz PWM operation. The dual-die construction shares a common drain pin on the exposed pad, simplifying PCB layout for half-bridge and bidirectional load switching.
Typical applications include automotive solenoid control, LED lighting drivers, DC motor H-bridges, battery management system (BMS) disconnect switches, and 12 V/24 V automotive load switches. The AEC-Q101 qualification makes it especially attractive for engine control units, body control modules, and LED headlamp drivers requiring long-term reliability under thermal-cycling stress.
When designing with this array, ensure the exposed pad is soldered to at least 1 cm² of copper on each layer to maintain theta_JA within spec. Because the two dies share a common drain (the EP pin), the part is best suited for half-bridge or parallel high-side configurations rather than fully isolated high-side/low-side use.
This page synthesizes distributor pricing, drop-in alternatives, and practical PCB thermal guidance not consolidated in the manufacturer datasheet, enabling faster engineering decisions.
חלופות תחליף ישיר עבור IPG20N06S2L65ATMA1 — אותו מארז, תואם פין-לפין. חלקים במארז שונה הדורשים עיבוד מחדש של ה-PCB אינם נכללים.
וריאנטים בסדרה זו
דגמים מאותה סדרה התואמים Drop-in עם IPG20N06S2L65ATMA1 (אותו גורם צורה וטביעת רגל) — שונים ב MSL Level, FET Type, Package, Technology, RoHS Status.
IPG20N04S408ATMA1
✅ Drop-Inצור קשר לקבלת מחיר
הצג גיליון נתונים ←IPG20N10S4L35ATMA1
✅ Drop-Inצור קשר לקבלת מחיר
הצג גיליון נתונים ←IPG20N06S2L65AATMA1
✅ Drop-Inצור קשר לקבלת מחיר
הצג גיליון נתונים ←BSC036NE7NS3GATMA1
✅ Drop-Inצור קשר לקבלת מחיר
הצג גיליון נתונים ←BSC042NE7NS3GATMA1
✅ Drop-Inצור קשר לקבלת מחיר
הצג גיליון נתונים ←IPG20N06S2L65ATMA1 דירוגים מרביים ומאפיינים חשמליים
| FET Type | Dual N-Channel, Logic Level |
| Technology | OptiMOS-T2 (Planar Trench 55V) |
| Drain-Source Voltage (VDS) | 55 V |
| Continuous Drain Current (ID) | 20 A per channel |
| RDS(on) at VGS=10V | 65 mΩ typical |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.5 V (logic level) |
| Total Power Dissipation (Ptot) | 43 W |
| טווח טמפרטורת פעולה | -55°C to +175°C |
| מארז | PG-TDSON-8-4 (TDSON-8 EP) |
| סוג הרכבה | Surface Mount |
| רמת MSL | MSL1 (260°C peak reflow) |
| Avalanche Rating | 100% Avalanche Tested |
| Automotive Qualification | AEC-Q101 Qualified |
| RoHS Compliance | RoHS Compliant (Green Product) |
| Packaging | Tape & Reel (TMA1 suffix) |
תצורת פינים של IPG20N06S2L65ATMA1
| פין 1 | G1 — Gate of MOSFET 1 |
| פין 2 | S1 — Source of MOSFET 1 |
| פין 3 | S1 — Source of MOSFET 1 (parallel pin) |
| פין 4 | S1 — Source of MOSFET 1 (parallel pin) |
| פין 5 | S2 — Source of MOSFET 2 |
| פין 6 | S2 — Source of MOSFET 2 (parallel pin) |
| פין 7 | S2 — Source of MOSFET 2 (parallel pin) |
| פין 8 | G2 — Gate of MOSFET 2 |
| פין EP | D (Drain) — Common drain (exposed pad) for both MOSFETs |
אזור פעולה בטוח
יישומים טיפוסיים
IPG20N06S2L65ATMA1 מתאים עבור 6 יישוםs: Automotive Solenoid Control, LED Lighting Drivers (Automotive Headlamps), DC Motor H-Bridge Drives, Battery Management System (BMS) Disconnect Switch, Body Control Module Load Switches, Industrial 24V Load Switching.
Automotive Solenoid Control
The IPG20N06S2L65ATMA1 is purpose-built for automotive solenoid drive applications. With its 55 V VDS rating it tolerates 24V truck bus transients plus load-dump clamping margin, while the 65 mΩ RDS(on) at logic-level gate drive limits conduction loss during PWM current regulation. The dual-channel configuration replaces two DPAK MOSFETs with one SuperSO8 footprint, reducing PCB area by roughly 50% and cutting parasitic loop inductance. AEC-Q101 qualification and 175°C junction rating ensure long-term reliability under engine-bay thermal cycling.
מומלץ
LED Lighting Drivers (Automotive Headlamps)
PWM dimming of high-brightness LED headlamps requires fast switching edges and matched dual MOSFETs. The IPG20N06S2L65ATMA1 provides two matched 65 mΩ N-channel dice in one package, enabling symmetric high-side and low-side switching for buck or boost LED driver topologies. Logic-level gate drive allows direct connection to 3.3V or 5V MCUs without bootstrap. The 100% avalanche-tested rating handles the unclamped inductive kick when driving inductive LED harnesses. AEC-Q101 plus MSL1 to 260°C reflow matches automotive assembly lines.
מומלץ
DC Motor H-Bridge Drives
Bidirectional DC motor control in automotive and industrial systems requires an H-bridge of four MOSFETs. The IPG20N06S2L65ATMA1 dual N-channel array lets designers build an H-bridge with just two such parts, halving component count and simplifying PCB layout. Each die's 20 A continuous rating handles peak motor stall currents up to 40 A in pulse mode. Logic-level VGS(th) eliminates the need for gate-driver charge pumps in 12V systems, reducing BOM cost and quiescent current.
מומלץ
Battery Management System (BMS) Disconnect Switch
Battery disconnect switches in 12V/24V BMS systems must sustain bidirectional current flow and survive short-circuit transients. The IPG20N06S2L65ATMA1's 55 V VDS and 20 A continuous rating cover typical automotive battery packs, while the dual-die configuration enables back-to-back source-source connection for true bidirectional blocking. Logic-level drive reduces standby current consumption critical for parked-vehicle quiescent budgets below 100 µA.
מומלץ
Body Control Module Load Switches
Body control modules drive dozens of resistive and inductive loads (door locks, window lifters, mirror heaters). The IPG20N06S2L65ATMA1's dual-channel architecture allows one device to drive two separate high-side loads with shared thermal management. AEC-Q101 qualification plus 175°C operating temperature handles under-hood BCM placement. The logic-level gate drive permits direct GPIO control from automotive MCUs at 3.3V or 5V logic.
מומלץ
Industrial 24V Load Switching
Beyond automotive, the IPG20N06S2L65ATMA1 serves industrial 24V bus switching where PLC outputs, relay coils, and solenoid valves need rugged high-side drivers. The 55 V VDS rating exceeds the maximum 24V industrial rail including transient overshoot, while the dual-channel design lets one IC drive two independent loads. The wide -55°C to +175°C operating range supports outdoor enclosures and unheated industrial cabinets.
מומלץ
סיכום מוצרים מומלצים
נתוני עזר הנדסיים עבור IPG20N06S2L65ATMA1 — השוואה, הנחיות תכנון ומידע על תאימות.
מדריך בחירה
השוואה עם חלופות
| פרמטר | מוצר זה | IPG20N04S408ATMA1 | IPG20N10S4L35ATMA1 | IPG20N06S2L65AATMA1 | BSC036NE7NS3GATMA1 | BSC042NE7NS3GATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TDSON-8-4 | PG-TDSON-8-4 | PG-TDSON-8-4 | PG-TDSON-8-4 | PG-TDSON-8-4 | PG-TDSON-8-4 |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| FET Configuration | Dual N-Channel | Dual N-Channel | Dual N-Channel | Dual N-Channel | Single N-Channel | Single N-Channel |
| VDS Max | 55 V | 40 V | 100 V | 55 V | 75 V | 75 V |
| Continuous Drain Current (ID) | 20 A per channel | 20 A per channel | 20 A per channel | 20 A per channel | 100 A | 90 A |
| RDS(on) at VGS=10V | 65 mΩ | 40 mΩ | 35 mΩ | 65 mΩ | 3.6 mΩ | 4.2 mΩ |
| Logic Level Gate Drive | Yes (VGS(th) 1.0-2.5V) | Yes | Yes | Yes | Standard level | Standard level |
| AEC-Q101 Qualified | Yes | Yes | Yes | Yes | Yes | Yes |
מבדילים עיקריים
- Dual matched N-channel dice in single SuperSO8 footprint (לעומתTwo discrete DPAK MOSFETs)
- Logic-level gate drive for direct MCU GPIO (לעומתBSC036NE7NS3GATMA1 (standard-level gate))
- 100% avalanche-tested dice for unclamped inductive switching (לעומתBSC042NE7NS3GATMA1)
הערות תכנון
The exposed pad on the PG-TDSON-8-4 package is the shared drain for both MOSFETs and MUST be soldered to a continuous copper pour of at least 1 cm² on the top layer, plus thermal vias to inner planes, to achieve the rated 43 W dissipation. Estimated: with 25 µm copper on top + 6 thermal vias to a bottom plane, theta_JA drops to roughly 30 C/W, allowing 2 A per channel at 24V rail switching without exceeding 100°C junction.
Place the gate-drive traces (G1, G2) as short as possible and away from the switching node (drain on EP). The dual-die shared-drain configuration means the EP pad is a high-dV/dt node - gate traces crossing it will inject Miller current. A 10 kΩ gate-source pull-down resistor on each gate keeps the MOSFET off during MCU reset, preventing accidental turn-on during inrush.
Do not use this part in fully isolated high-side/low-side configurations - the common exposed-pad drain ties both dies together, making true isolated half-bridge impossible. For isolated half-bridge, use two individual MOSFETs in SO-8 or two IPG20N06S2L65ATMA1 parts in separate packages. Also ensure VGS never exceeds ±20V absolute maximum, even during transient ringing from gate-drive inductance.
Estimated conduction loss at 10 A per channel with VGS=10V: P = I² × RDS(on) = 100 × 0.065 = 6.5 W per channel, or 13 W total. At 24V input and typical automotive cooling (theta_JA ≈ 30 C/W), this yields a junction temperature rise of 195°C above ambient - heatsinking or derating is mandatory. Switching loss at 25 kHz is negligible compared to conduction for this part.
מידע על תאימות
AEC-Q101 qualified (note: AEC-Q101 is the automotive stress test standard for discrete semiconductors, equivalent to AEC-Q100 for ICs). RoHS compliant Green Product. MSL1 rated to 260°C peak reflow.
