1N5711UR-1 vs 1N5711 तुलना

विस्तृत दोनों ओर की तुलना 1N5711UR-1 द्वारा Microchip Technology और 1N5711 द्वारा STMicroelectronics. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。

Microchip Technology
1N5711UR-1 1N5711UR-1 - 50V 33mA Schottky Barrier Diode | Microchip

1N5711UR-1 - 50V 33mA Schottky Barrier Diode | Microchip

1N5711UR-1 ✓ सक्रिय
STMicroelectronics
1N5711 1N5711 - 70V 15mA Schottky RF Diode DO-35 | STMicroelectronics

1N5711 - 70V 15mA Schottky RF Diode DO-35 | STMicroelectronics

1N5711 ✓ सक्रिय

विशेषता तुलना

पैरामीटर 1N5711UR-1 1N5711
ब्रांड Microchip Technology STMicroelectronics
श्रेणी Diodes Diodes
लाइफसाइकिल स्थिति सक्रिय सक्रिय
Diode Type Schottky barrier diode Small-signal Schottky barrier (RF) diode
Reverse Voltage (Vr) 50 V —
Average Forward Current 33 mA —
Configuration Single diode —
पैकेज DO-213AA (MELF / SOD-80 / LL34), hermetically sealed glass DO-35 (DO-204AH) hermetic axial-lead glass
माउंटिंग प्रकार Surface Mount Through-Hole
Construction Metallurgically bonded —
Qualification Grade Military grade (1N prefix, high reliability) —
Terminal Finish Tin/lead plated or RoHS-compliant matte tin over copper-clad steel (commercial grade) —
Solderability MIL-STD-750 method 2026 —
Family Members 1N5711UR-1, 1N5712UR-1, 1N6857UR-1, 1N6858UR-1, CDLL equivalents —
ऑपरेटिंग तापमान [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Forward Voltage (Vf) [DATA_NEEDED: forward voltage at rated current] —
Reverse Current (Ir) [DATA_NEEDED: reverse leakage current] —
Junction Capacitance [DATA_NEEDED: junction capacitance] —
RoHS स्थिति [DATA_NEEDED: RoHS compliance status] Compliant
Peak Reverse Voltage (VRRM) — 70 V
Continuous Forward Current (IF) — 15 mA
Power Dissipation — 430 mW
Forward Voltage (VF) — 0.41 V (at 1 mA, per MACOM)
Total Capacitance — 2 pF
Junction Capacitance (Cj) — 1 pF
Dynamic Resistance — 35 ohm
Breakdown Voltage (VB) — 70 V
Switching Speed — Picosecond class (ultrafast, no minority-carrier storage)
Junction Structure — Metal-to-silicon junction with PN guard ring
Reverse Leakage Current — [DATA_NEEDED: reverse leakage current at rated VR]

डेटाशीट और संसाधन

सभी उत्पादों को देखें BOM बनाएं कीट की अनुरोध