1N5711UR-1 vs 1N5711 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng 1N5711UR-1 sa pamamagitan ng Microchip Technology at 1N5711 sa pamamagitan ng STMicroelectronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Microchip Technology
1N5711UR-1 - 50V 33mA Schottky Barrier Diode | Microchip
1N5711UR-1 ✓ NakahandaSTMicroelectronics
1N5711 - 70V 15mA Schottky RF Diode DO-35 | STMicroelectronics
1N5711 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | 1N5711UR-1 | 1N5711 |
|---|---|---|
| Brand | Microchip Technology | STMicroelectronics |
| Kategorya | Diodes | Diodes |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Diode Type | Schottky barrier diode | Small-signal Schottky barrier (RF) diode |
| Reverse Voltage (Vr) | 50 V | — |
| Average Forward Current | 33 mA | — |
| Configuration | Single diode | — |
| Packhaging | DO-213AA (MELF / SOD-80 / LL34), hermetically sealed glass | DO-35 (DO-204AH) hermetic axial-lead glass |
| Uri ng Pagpapasok | Surface Mount | Through-Hole |
| Construction | Metallurgically bonded | — |
| Qualification Grade | Military grade (1N prefix, high reliability) | — |
| Terminal Finish | Tin/lead plated or RoHS-compliant matte tin over copper-clad steel (commercial grade) | — |
| Solderability | MIL-STD-750 method 2026 | — |
| Family Members | 1N5711UR-1, 1N5712UR-1, 1N6857UR-1, 1N6858UR-1, CDLL equivalents | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Forward Voltage (Vf) | [DATA_NEEDED: forward voltage at rated current] | — |
| Reverse Current (Ir) | [DATA_NEEDED: reverse leakage current] | — |
| Junction Capacitance | [DATA_NEEDED: junction capacitance] | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS compliance status] | Compliant |
| Peak Reverse Voltage (VRRM) | — | 70 V |
| Continuous Forward Current (IF) | — | 15 mA |
| Power Dissipation | — | 430 mW |
| Forward Voltage (VF) | — | 0.41 V (at 1 mA, per MACOM) |
| Total Capacitance | — | 2 pF |
| Junction Capacitance (Cj) | — | 1 pF |
| Dynamic Resistance | — | 35 ohm |
| Breakdown Voltage (VB) | — | 70 V |
| Switching Speed | — | Picosecond class (ultrafast, no minority-carrier storage) |
| Junction Structure | — | Metal-to-silicon junction with PN guard ring |
| Reverse Leakage Current | — | [DATA_NEEDED: reverse leakage current at rated VR] |