CGD65A130S2 vs CGD65B130S2 तुलना
विस्तृत दोनों ओर की तुलना CGD65A130S2 द्वारा Cambridge GaN Devices और CGD65B130S2 द्वारा Cambridge GaN Devices. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Cambridge GaN Devices
CGD65A130S2 - 650V 130mΩ GaN HEMT | Cambridge GaN Devices
CGD65A130S2 ✓ सक्रियCambridge GaN Devices
CGD65B130S2 - 650V 130mΩ GaN HEMT | Cambridge GaN Devices
CGD65B130S2 ✓ सक्रियविशेषता तुलना
| पैरामीटर | CGD65A130S2 | CGD65B130S2 |
|---|---|---|
| ब्रांड | Cambridge GaN Devices | Cambridge GaN Devices |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Manufacturer | Cambridge GaN Devices | Cambridge GaN Devices |
| Technology | GaN-on-Si HEMT (enhancement-mode, ICeGaN™ gate) | — |
| Drain-Source Voltage (VDS, max) | 650 V | — |
| On-State Resistance (RDS(on)) | 130 mΩ (typ) | — |
| Continuous Drain Current (ID) | [DATA_NEEDED: continuous ID at 25°C and 100°C] | 12 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM rating] | — |
| Gate Charge (Qg, total) | [DATA_NEEDED: Qg typical value] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss value at VDS=400V] | [DATA_NEEDED: output capacitance] |
| Reverse Recovery Charge (Qrr) | 0 nC (GaN - negligible) | 0 nC (zero) |
| Gate-Source Voltage Rating | ±20 V (ICeGaN robust gate; see datasheet) | — |
| ऑपरेटिंग जंक्शन तापमान | -40°C to +150°C | — |
| पैकेज | DFN-16 (8 × 8 mm) with exposed pad | 8-DFN 5x6 mm with exposed thermal pad |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| Integrated Features | Current sense, Miller clamp (NL³), ICeGaN gate | — |
| RoHS स्थिति | Compliant | Compliant |
| MSL स्तर | [DATA_NEEDED: MSL rating] | MSL 1 (per JEDEC J-STD-020) |
| ट्रांज़िस्टर प्रकार | — | GaN HEMT (enhancement mode, N-channel) |
| Drain-Source Voltage (VDS) | — | 650 V |
| On-Resistance (RDS(on)) | — | 130 mΩ (typical) |
| Gate Technology | — | ICeGaN™ (standard-driver compatible) |
| ऑपरेटिंग तापमान | — | -55 °C to +150 °C (junction) |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg total gate charge at VGS=10V] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: input capacitance] |
| Rise Time / Fall Time | — | Sub-nanosecond (per datasheet typical application) |
| Substrate Technology | — | GaN-on-silicon |