CGD65A130S2 vs CGD65B130S2 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng CGD65A130S2 sa pamamagitan ng Cambridge GaN Devices at CGD65B130S2 sa pamamagitan ng Cambridge GaN Devices. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Cambridge GaN Devices
CGD65A130S2 - 650V 130mΩ GaN HEMT | Cambridge GaN Devices
CGD65A130S2 ✓ NakahandaCambridge GaN Devices
CGD65B130S2 - 650V 130mΩ GaN HEMT | Cambridge GaN Devices
CGD65B130S2 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | CGD65A130S2 | CGD65B130S2 |
|---|---|---|
| Brand | Cambridge GaN Devices | Cambridge GaN Devices |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Cambridge GaN Devices | Cambridge GaN Devices |
| Technology | GaN-on-Si HEMT (enhancement-mode, ICeGaN™ gate) | — |
| Drain-Source Voltage (VDS, max) | 650 V | — |
| On-State Resistance (RDS(on)) | 130 mΩ (typ) | — |
| Continuous Drain Current (ID) | [DATA_NEEDED: continuous ID at 25°C and 100°C] | 12 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM rating] | — |
| Gate Charge (Qg, total) | [DATA_NEEDED: Qg typical value] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss value at VDS=400V] | [DATA_NEEDED: output capacitance] |
| Reverse Recovery Charge (Qrr) | 0 nC (GaN - negligible) | 0 nC (zero) |
| Gate-Source Voltage Rating | ±20 V (ICeGaN robust gate; see datasheet) | — |
| Temperature ng Junction na Operasyon | -40°C to +150°C | — |
| Packhaging | DFN-16 (8 × 8 mm) with exposed pad | 8-DFN 5x6 mm with exposed thermal pad |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Integrated Features | Current sense, Miller clamp (NL³), ICeGaN gate | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | [DATA_NEEDED: MSL rating] | MSL 1 (per JEDEC J-STD-020) |
| Uri ng Transistor | — | GaN HEMT (enhancement mode, N-channel) |
| Drain-Source Voltage (VDS) | — | 650 V |
| On-Resistance (RDS(on)) | — | 130 mΩ (typical) |
| Gate Technology | — | ICeGaN™ (standard-driver compatible) |
| Temperature na Operasyon | — | -55 °C to +150 °C (junction) |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg total gate charge at VGS=10V] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: input capacitance] |
| Rise Time / Fall Time | — | Sub-nanosecond (per datasheet typical application) |
| Substrate Technology | — | GaN-on-silicon |