EP3C16F256C7 vs EP3C16F256I7N तुलना
विस्तृत दोनों ओर की तुलना EP3C16F256C7 द्वारा Intel और EP3C16F256I7N द्वारा Intel. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | EP3C16F256C7 | EP3C16F256I7N |
|---|---|---|
| ब्रांड | Intel | Intel |
| श्रेणी | FPGA & CPLD | FPGA & CPLD |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Device Type | FPGA (Field Programmable Gate Array) | — |
| Device Family | Cyclone III | — |
| Logic Cells / Logic Blocks | 15,408 | — |
| Embedded Memory | 516,096 bit | 56 M9K blocks (504 Kbit) |
| User I/O | 168 | — |
| Total Package Pins | 256 | — |
| Package Type | 256-LBGA (FBGA-256) | — |
| Package Type Designation | Other, LEAD FREE, MS-034, FBGA-256 | — |
| माउंटिंग प्रकार | Surface mount | — |
| ऑपरेटिंग तापमान | -40 °C to +125 °C (-40 °F to +257 °F) | -40C to +100C (industrial, I7) |
| Lead-Free Status | Lead free | — |
| Minimum Operating Supply Voltage | [DATA_NEEDED: minimum operating supply voltage] | — |
| Maximum Operating Supply Voltage | [DATA_NEEDED: maximum operating supply voltage] | — |
| Core Performance | [DATA_NEEDED: core performance rating or maximum operating frequency] | — |
| Embedded Memory Block Count | [DATA_NEEDED: embedded memory block count] | — |
| Internal Block RAM Capacity | 516,096 bit | — |
| PLL Count | [DATA_NEEDED: PLL count] | — |
| Dedicated Multipliers | [DATA_NEEDED: dedicated multiplier count] | — |
| RoHS Compliance | [DATA_NEEDED: RoHS compliance statement] | Compliant |
| REACH Compliance | [DATA_NEEDED: REACH compliance statement] | — |
| AEC-Q100 Qualification | [DATA_NEEDED: AEC-Q100 qualification status] | — |
| Family | — | Cyclone III |
| Logic Elements (LEs) | — | 15408 |
| Logic Array Blocks (LABs) | — | 963 |
| Total Memory Bits | — | 516096 |
| Embedded 18x18 Multipliers | — | 56 |
| PLLs | — | 4 |
| Maximum User I/O Pins | — | 168 |
| पैकेज | — | 256-ball FBGA (17 mm x 17 mm, 1.0 mm pitch) |
| Supply Voltage (Core) | — | 1.2 V typical |
| Process Technology | — | TSMC 60 nm low-leakage |
| Configuration | — | SRAM-based, requires external config device (EPCS/EPCQ) |
| Lead-Free / Pb-Free | — | Yes (N suffix per JEDEC JESD97) |