EP3C16F256C7 vs EP3C16F256I7N Perbandingan
Perbandingan bersamaan detil EP3C16F256C7 dari Intel dan EP3C16F256I7N dari Intel. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | EP3C16F256C7 | EP3C16F256I7N |
|---|---|---|
| Merek | Intel | Intel |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | Aktif | Aktif |
| Device Type | FPGA (Field Programmable Gate Array) | — |
| Device Family | Cyclone III | — |
| Logic Cells / Logic Blocks | 15,408 | — |
| Embedded Memory | 516,096 bit | 56 M9K blocks (504 Kbit) |
| User I/O | 168 | — |
| Total Package Pins | 256 | — |
| Package Type | 256-LBGA (FBGA-256) | — |
| Package Type Designation | Other, LEAD FREE, MS-034, FBGA-256 | — |
| Tipe Mounting | Surface mount | — |
| Suhu Kerja | -40 °C to +125 °C (-40 °F to +257 °F) | -40C to +100C (industrial, I7) |
| Lead-Free Status | Lead free | — |
| Minimum Operating Supply Voltage | [DATA_NEEDED: minimum operating supply voltage] | — |
| Maximum Operating Supply Voltage | [DATA_NEEDED: maximum operating supply voltage] | — |
| Core Performance | [DATA_NEEDED: core performance rating or maximum operating frequency] | — |
| Embedded Memory Block Count | [DATA_NEEDED: embedded memory block count] | — |
| Internal Block RAM Capacity | 516,096 bit | — |
| PLL Count | [DATA_NEEDED: PLL count] | — |
| Dedicated Multipliers | [DATA_NEEDED: dedicated multiplier count] | — |
| RoHS Compliance | [DATA_NEEDED: RoHS compliance statement] | Compliant |
| REACH Compliance | [DATA_NEEDED: REACH compliance statement] | — |
| AEC-Q100 Qualification | [DATA_NEEDED: AEC-Q100 qualification status] | — |
| Family | — | Cyclone III |
| Logic Elements (LEs) | — | 15408 |
| Logic Array Blocks (LABs) | — | 963 |
| Total Memory Bits | — | 516096 |
| Embedded 18x18 Multipliers | — | 56 |
| PLLs | — | 4 |
| Maximum User I/O Pins | — | 168 |
| Paket | — | 256-ball FBGA (17 mm x 17 mm, 1.0 mm pitch) |
| Supply Voltage (Core) | — | 1.2 V typical |
| Process Technology | — | TSMC 60 nm low-leakage |
| Configuration | — | SRAM-based, requires external config device (EPCS/EPCQ) |
| Lead-Free / Pb-Free | — | Yes (N suffix per JEDEC JESD97) |