IGD08N120S7ATMA1 vs IKD10N60RC2ATMA1 तुलना
विस्तृत दोनों ओर की तुलना IGD08N120S7ATMA1 द्वारा Infineon और IKD10N60RC2ATMA1 द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | IGD08N120S7ATMA1 | IKD10N60RC2ATMA1 |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | IGBTs | IGBTs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Manufacturer | Infineon Technologies | — |
| Product Family | IGBT 7 (S7) Trench Field Stop | — |
| Collector-Emitter Voltage (Vce max) | 1200 V | — |
| Continuous Collector Current (Ic, Tc=25C) | 24 A | — |
| Pulsed Collector Current (Icm) | [DATA_NEEDED: pulsed collector current] | — |
| Total Power Dissipation (Ptot) | 106 W | — |
| Gate-Emitter Voltage (Vge max) | [DATA_NEEDED: Vge max] | — |
| VCE(sat) at rated Ic | 1.65 V | — |
| Co-packaged Diode | Yes (anti-parallel emitter diode) | — |
| ऑपरेटिंग जंक्शन तापमान | -40C to +175C (industry grade) | — |
| पैकेज | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK, surface mount) |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| Technology | Trench Field Stop, 7th generation | TRENCHSTOP RC2 (Trench Field Stop IGBT with monolithically integrated diode) |
| Configuration | Single | — |
| RoHS स्थिति | Compliant | Compliant |
| Collector-Emitter Voltage (V_CE) | — | 600 V |
| Continuous Collector Current (I_C nom) | — | 10 A |
| Pulsed Collector Current (I_Cp) | — | 18.8 A |
| Maximum Power Dissipation (P_tot) | — | 79 W |
| Integrated Diode | — | Yes - reverse-conducting 2-diode co-packed |
| ऑपरेटिंग तापमान रेंज | — | -40 C to +175 C (junction) |
| Gate-Emitter Voltage (V_GE) | — | [DATA_NEEDED: recommended V_GE value] |
| V_CE(sat) at I_C | — | [DATA_NEEDED: typical V_CE(sat)] |
| Switching Frequency (typical) | — | 10 - 30 kHz (hard-switching) |
| Short-Circuit Withstand Time | — | [DATA_NEEDED: t_sc rating] |
| Qualification | — | Industrial (qualified per Infineon product validation) |