IGD08N120S7ATMA1 vs IKD10N60RC2ATMA1 مقایسه
مقایسه دقیق کنار به کنار IGD08N120S7ATMA1 توسط Infineon و IKD10N60RC2ATMA1 توسط Infineon. مشخصات کلیدی، پارامترهای الکتریکی، بسته‌بندی، وضعیت چرخه عمر، قیمت‌گذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.
مقایسه مشخصات
| پارامتر | IGD08N120S7ATMA1 | IKD10N60RC2ATMA1 |
|---|---|---|
| برند | Infineon | Infineon |
| دسته‌بندی | IGBTs | IGBTs |
| وضعیت چرخه عمر | فعال | فعال |
| Manufacturer | Infineon Technologies | — |
| Product Family | IGBT 7 (S7) Trench Field Stop | — |
| Collector-Emitter Voltage (Vce max) | 1200 V | — |
| Continuous Collector Current (Ic, Tc=25C) | 24 A | — |
| Pulsed Collector Current (Icm) | [DATA_NEEDED: pulsed collector current] | — |
| Total Power Dissipation (Ptot) | 106 W | — |
| Gate-Emitter Voltage (Vge max) | [DATA_NEEDED: Vge max] | — |
| VCE(sat) at rated Ic | 1.65 V | — |
| Co-packaged Diode | Yes (anti-parallel emitter diode) | — |
| دمای اتصال کاری | -40C to +175C (industry grade) | — |
| بسته‌بندی | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK, surface mount) |
| نوع نصب | Surface Mount | Surface Mount |
| Technology | Trench Field Stop, 7th generation | TRENCHSTOP RC2 (Trench Field Stop IGBT with monolithically integrated diode) |
| Configuration | Single | — |
| وضعیت RoHS | Compliant | Compliant |
| Collector-Emitter Voltage (V_CE) | — | 600 V |
| Continuous Collector Current (I_C nom) | — | 10 A |
| Pulsed Collector Current (I_Cp) | — | 18.8 A |
| Maximum Power Dissipation (P_tot) | — | 79 W |
| Integrated Diode | — | Yes - reverse-conducting 2-diode co-packed |
| محدوده دمای کاری | — | -40 C to +175 C (junction) |
| Gate-Emitter Voltage (V_GE) | — | [DATA_NEEDED: recommended V_GE value] |
| V_CE(sat) at I_C | — | [DATA_NEEDED: typical V_CE(sat)] |
| Switching Frequency (typical) | — | 10 - 30 kHz (hard-switching) |
| Short-Circuit Withstand Time | — | [DATA_NEEDED: t_sc rating] |
| Qualification | — | Industrial (qualified per Infineon product validation) |