IRFB7545PBF vs IRFB4127PBF तुलना
विस्तृत दोनों ओर की तुलना IRFB7545PBF द्वारा Infineon और IRFB4127PBF द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | IRFB7545PBF | IRFB4127PBF |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IRFB7545PBF | IRFB4127PBF |
| Technology | StrongIRFET™ (HEXFET, N-Channel) | TrenchFET Gen 6 (HEXFET) |
| Polarity | N-Channel | — |
| VDS (Drain-Source Voltage) max | 60 V | — |
| VGS (Gate-Source Voltage) max | ±20 V | — |
| RDS(on) max at VGS=10V | 5.9 mOhm | — |
| Continuous Drain Current (ID) at Tc=25C | 95 A | — |
| Pulsed Drain Current (IDM) | 380 A | — |
| Single-Pulse Avalanche Current (IAS) | 57 A | — |
| Power Dissipation (PD) at Tc=25C | 125 W | — |
| Thermal Resistance Junction-to-Case (RthJC) | 1.0 C/W | — |
| ऑपरेटिंग जंक्शन तापमान | -55C to +175C | -55C to +175C |
| पैकेज | TO-220AB (Through-Hole) | — |
| माउंटिंग प्रकार | Through Hole (THT) | Through Hole |
| Lead-Free / RoHS | Yes (Lead-Free, PBF suffix) | — |
| MSL स्तर | N/A (Through-Hole) | — |
| Gate Drive Voltage (typical) | 10 V | — |
| Avalanche Energy Rated | Yes | — |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (Vdss) | — | 200 V |
| Continuous Drain Current (Id) at Tc | — | 76 A |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (Vgs) max | — | ±20 V |
| Drain-Source On-Resistance (Rds(on)) max | — | 20 mOhm |
| Total Gate Charge (Qg) | — | 100 nC |
| Power Dissipation (Pd) at Tc | — | 375 W |
| पैकेज / केस | — | TO-220AB (through-hole) |
| RoHS स्थिति | — | Lead-Free (PBF suffix indicates RoHS compliance) |
| Configuration | — | Single |