IRFB7545PBF vs IRFB4127PBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFB7545PBF sa pamamagitan ng Infineon at IRFB4127PBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFB7545PBF IRFB4127PBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Part Number IRFB7545PBF IRFB4127PBF
Technology StrongIRFET™ (HEXFET, N-Channel) TrenchFET Gen 6 (HEXFET)
Polarity N-Channel —
VDS (Drain-Source Voltage) max 60 V —
VGS (Gate-Source Voltage) max ±20 V —
RDS(on) max at VGS=10V 5.9 mOhm —
Continuous Drain Current (ID) at Tc=25C 95 A —
Pulsed Drain Current (IDM) 380 A —
Single-Pulse Avalanche Current (IAS) 57 A —
Power Dissipation (PD) at Tc=25C 125 W —
Thermal Resistance Junction-to-Case (RthJC) 1.0 C/W —
Temperature ng Junction na Operasyon -55C to +175C -55C to +175C
Packhaging TO-220AB (Through-Hole) —
Uri ng Pagpapasok Through Hole (THT) Through Hole
Lead-Free / RoHS Yes (Lead-Free, PBF suffix) —
Level ng MSL N/A (Through-Hole) —
Gate Drive Voltage (typical) 10 V —
Avalanche Energy Rated Yes —
Channel Type — N-Channel
Drain-Source Voltage (Vdss) — 200 V
Continuous Drain Current (Id) at Tc — 76 A
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (Vgs) max — ±20 V
Drain-Source On-Resistance (Rds(on)) max — 20 mOhm
Total Gate Charge (Qg) — 100 nC
Power Dissipation (Pd) at Tc — 375 W
Packhaging / Kaso — TO-220AB (through-hole)
Tindminan RoHS — Lead-Free (PBF suffix indicates RoHS compliance)
Configuration — Single

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