IRFB7545PBF vs IRFB4127PBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFB7545PBF disebabkan oleh Infineon dan IRFB4127PBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFB7545PBF | IRFB4127PBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IRFB7545PBF | IRFB4127PBF |
| Technology | StrongIRFET™ (HEXFET, N-Channel) | TrenchFET Gen 6 (HEXFET) |
| Polarity | N-Channel | — |
| VDS (Drain-Source Voltage) max | 60 V | — |
| VGS (Gate-Source Voltage) max | ±20 V | — |
| RDS(on) max at VGS=10V | 5.9 mOhm | — |
| Continuous Drain Current (ID) at Tc=25C | 95 A | — |
| Pulsed Drain Current (IDM) | 380 A | — |
| Single-Pulse Avalanche Current (IAS) | 57 A | — |
| Power Dissipation (PD) at Tc=25C | 125 W | — |
| Thermal Resistance Junction-to-Case (RthJC) | 1.0 C/W | — |
| Suhu Hubungan Operasi | -55C to +175C | -55C to +175C |
| Kemasan | TO-220AB (Through-Hole) | — |
| Jenis Pemasangan | Through Hole (THT) | Through Hole |
| Lead-Free / RoHS | Yes (Lead-Free, PBF suffix) | — |
| Aras MSL | N/A (Through-Hole) | — |
| Gate Drive Voltage (typical) | 10 V | — |
| Avalanche Energy Rated | Yes | — |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (Vdss) | — | 200 V |
| Continuous Drain Current (Id) at Tc | — | 76 A |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (Vgs) max | — | ±20 V |
| Drain-Source On-Resistance (Rds(on)) max | — | 20 mOhm |
| Total Gate Charge (Qg) | — | 100 nC |
| Power Dissipation (Pd) at Tc | — | 375 W |
| Kemasan / Case | — | TO-220AB (through-hole) |
| Status RoHS | — | Lead-Free (PBF suffix indicates RoHS compliance) |
| Configuration | — | Single |