IRLR120NTRPBF vs IRFR220NTRLPBF तुलना
विस्तृत दोनों ओर की तुलना IRLR120NTRPBF द्वारा Infineon और IRFR220NTRLPBF द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | IRLR120NTRPBF | IRFR220NTRLPBF |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| FET Type | N-Channel MOSFET | — |
| Technology | HEXFET (Fifth Generation, planar) | — |
| Drain-to-Source Voltage (Vdss) | 100 V | — |
| Continuous Drain Current (Id) at Tc=25C | 10 A | 5 A |
| Continuous Drain Current (Id) at Tc=100C | [DATA_NEEDED: Id at Tc=100C] | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed Idm] | [DATA_NEEDED: pulsed drain current] |
| Rds(on) Max at Vgs=10V | 185 mΩ | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: typical Vgs(th)] | — |
| Total Gate Charge (Qg) | 13.3 nC | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation (Pd) at Tc=25C | 48 W | 43 W |
| ऑपरेटिंग तापमान रेंज | -55C to +175C (junction) | -55C to +150C (junction) |
| पैकेज | TO-252AA (DPAK), 3-pin surface mount | TO-252AA (DPAK), 2 Leads + Tab, SC-63 |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| Avalanche Energy Rating | Fully avalanche rated | — |
| Lead-Free / RoHS | Yes (PBF suffix indicates lead-free) | — |
| MSL स्तर | 1 | 1 |
| Polarity | — | N-Channel |
| Mode | — | Enhancement |
| V(BR)DSS (Drain-Source Breakdown Voltage) | — | 200 V |
| Static Drain-Source On-Resistance (RDS(on)) | — | 0.800 ohm (max) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Gate-to-Drain Charge (Qgd) | — | Low (per datasheet - HEXFET design) |
| RoHS स्थिति | — | Compliant (Pb-free PBF suffix) |
| Packaging | — | Tape & Reel (Left orientation - TRLPBF) |
| Avalanche Rated | — | Yes (HEXFET ruggedized design) |
| Technology Family | — | HEXFET, Planar, Generation 3 |