IRLR120NTRPBF vs IRFR220NTRLPBF 比較

詳細並排比較 IRLR120NTRPBF 由 Infineon 與 IRFR220NTRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRLR120NTRPBF IRLR120NTRPBF - 100V N-Channel HEXFET MOSFET | Infineon

IRLR120NTRPBF - 100V N-Channel HEXFET MOSFET | Infineon

IRLR120NTRPBF ✓ 啟用中
Infineon
IRFR220NTRLPBF IRFR220NTRLPBF - 200V 5A N-Ch MOSFET, DPAK | Infineon

IRFR220NTRLPBF - 200V 5A N-Ch MOSFET, DPAK | Infineon

IRFR220NTRLPBF ✓ 啟用中

規格比較

參數 IRLR120NTRPBF IRFR220NTRLPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel MOSFET —
Technology HEXFET (Fifth Generation, planar) —
Drain-to-Source Voltage (Vdss) 100 V —
Continuous Drain Current (Id) at Tc=25C 10 A 5 A
Continuous Drain Current (Id) at Tc=100C [DATA_NEEDED: Id at Tc=100C] —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed Idm] [DATA_NEEDED: pulsed drain current]
Rds(on) Max at Vgs=10V 185 mΩ —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: typical Vgs(th)] —
Total Gate Charge (Qg) 13.3 nC [DATA_NEEDED: total gate charge Qg]
Power Dissipation (Pd) at Tc=25C 48 W 43 W
工作溫度範圍 -55C to +175C (junction) -55C to +150C (junction)
封裝 TO-252AA (DPAK), 3-pin surface mount TO-252AA (DPAK), 2 Leads + Tab, SC-63
安裝類型 Surface Mount Surface Mount
Avalanche Energy Rating Fully avalanche rated —
Lead-Free / RoHS Yes (PBF suffix indicates lead-free) —
MSL 等級 1 1
Polarity — N-Channel
Mode — Enhancement
V(BR)DSS (Drain-Source Breakdown Voltage) — 200 V
Static Drain-Source On-Resistance (RDS(on)) — 0.800 ohm (max)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Gate-to-Drain Charge (Qgd) — Low (per datasheet - HEXFET design)
RoHS 狀態 — Compliant (Pb-free PBF suffix)
Packaging — Tape & Reel (Left orientation - TRLPBF)
Avalanche Rated — Yes (HEXFET ruggedized design)
Technology Family — HEXFET, Planar, Generation 3

資料表與資源

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