IRLR120NTRPBF vs IRFR220NTRLPBF Perbandingan
Perbandingan bersamaan detil IRLR120NTRPBF dari Infineon dan IRFR220NTRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRLR120NTRPBF | IRFR220NTRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel MOSFET | — |
| Technology | HEXFET (Fifth Generation, planar) | — |
| Drain-to-Source Voltage (Vdss) | 100 V | — |
| Continuous Drain Current (Id) at Tc=25C | 10 A | 5 A |
| Continuous Drain Current (Id) at Tc=100C | [DATA_NEEDED: Id at Tc=100C] | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed Idm] | [DATA_NEEDED: pulsed drain current] |
| Rds(on) Max at Vgs=10V | 185 mΩ | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: typical Vgs(th)] | — |
| Total Gate Charge (Qg) | 13.3 nC | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation (Pd) at Tc=25C | 48 W | 43 W |
| Rentang Suhu Kerja | -55C to +175C (junction) | -55C to +150C (junction) |
| Paket | TO-252AA (DPAK), 3-pin surface mount | TO-252AA (DPAK), 2 Leads + Tab, SC-63 |
| Tipe Mounting | Surface Mount | Surface Mount |
| Avalanche Energy Rating | Fully avalanche rated | — |
| Lead-Free / RoHS | Yes (PBF suffix indicates lead-free) | — |
| Level MSL | 1 | 1 |
| Polarity | — | N-Channel |
| Mode | — | Enhancement |
| V(BR)DSS (Drain-Source Breakdown Voltage) | — | 200 V |
| Static Drain-Source On-Resistance (RDS(on)) | — | 0.800 ohm (max) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Gate-to-Drain Charge (Qgd) | — | Low (per datasheet - HEXFET design) |
| Status RoHS | — | Compliant (Pb-free PBF suffix) |
| Packaging | — | Tape & Reel (Left orientation - TRLPBF) |
| Avalanche Rated | — | Yes (HEXFET ruggedized design) |
| Technology Family | — | HEXFET, Planar, Generation 3 |