IRLR120NTRPBF vs IRFR220NTRLPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRLR120NTRPBF sa pamamagitan ng Infineon at IRFR220NTRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRLR120NTRPBF | IRFR220NTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel MOSFET | — |
| Technology | HEXFET (Fifth Generation, planar) | — |
| Drain-to-Source Voltage (Vdss) | 100 V | — |
| Continuous Drain Current (Id) at Tc=25C | 10 A | 5 A |
| Continuous Drain Current (Id) at Tc=100C | [DATA_NEEDED: Id at Tc=100C] | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed Idm] | [DATA_NEEDED: pulsed drain current] |
| Rds(on) Max at Vgs=10V | 185 mΩ | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: typical Vgs(th)] | — |
| Total Gate Charge (Qg) | 13.3 nC | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation (Pd) at Tc=25C | 48 W | 43 W |
| Hanay ng Temperature na Operasyon | -55C to +175C (junction) | -55C to +150C (junction) |
| Packhaging | TO-252AA (DPAK), 3-pin surface mount | TO-252AA (DPAK), 2 Leads + Tab, SC-63 |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Avalanche Energy Rating | Fully avalanche rated | — |
| Lead-Free / RoHS | Yes (PBF suffix indicates lead-free) | — |
| Level ng MSL | 1 | 1 |
| Polarity | — | N-Channel |
| Mode | — | Enhancement |
| V(BR)DSS (Drain-Source Breakdown Voltage) | — | 200 V |
| Static Drain-Source On-Resistance (RDS(on)) | — | 0.800 ohm (max) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Gate-to-Drain Charge (Qgd) | — | Low (per datasheet - HEXFET design) |
| Tindminan RoHS | — | Compliant (Pb-free PBF suffix) |
| Packaging | — | Tape & Reel (Left orientation - TRLPBF) |
| Avalanche Rated | — | Yes (HEXFET ruggedized design) |
| Technology Family | — | HEXFET, Planar, Generation 3 |