IXDH20N120D1 vs IXDH20N120 तुलना

विस्तृत दोनों ओर की तुलना IXDH20N120D1 द्वारा Littelfuse और IXDH20N120 द्वारा Littelfuse. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。

Littelfuse
IXDH20N120D1 IXDH20N120D1 - 1200V 38A NPT IGBT with Diode | TO-247AD | Littelfuse

IXDH20N120D1 - 1200V 38A NPT IGBT with Diode | TO-247AD | Littelfuse

IXDH20N120D1 ✓ सक्रिय
Littelfuse
IXDH20N120 IXDH20N120 - 1200V 38A NPT IGBT | IXYS | TO-247AD

IXDH20N120 - 1200V 38A NPT IGBT | IXYS | TO-247AD

IXDH20N120 ✓ सक्रिय

विशेषता तुलना

पैरामीटर IXDH20N120D1 IXDH20N120
ब्रांड Littelfuse Littelfuse
श्रेणी IGBTs IGBTs
लाइफसाइकिल स्थिति सक्रिय सक्रिय
Polarity N-Channel —
Technology NPT (Non-Punch Through) IGBT with co-packaged FRED —
Collector-Emitter Voltage (VCES) 1200 V 1200 V
Gate-Emitter Voltage (VGES) +/- 20 V —
Continuous Collector Current IC25 38 A (at TC = 25 C) —
Continuous Collector Current IC90 [DATA_NEEDED: IC90 value] —
Pulsed Collector Current (ICM) [DATA_NEEDED: ICM value] [DATA_NEEDED: pulsed collector current 1 ms]
Maximum Power Dissipation (PC) 200 W —
कलेक्टर-एमिटर सैचुरेशन वोल्टेज (Vce(sat)) 3.0 V typ at IC = 20 A —
Gate Threshold Voltage (VGE(th)) [DATA_NEEDED: VGE(th) value] —
RBSOA Square RBSOA at 1200 V / 38 A (snubberless hard switching) Square (no latch-up) at VGE = 15 V, Rg = 20 ohm, TJ up to 150 C
Short Circuit Withstand Time (tSC) [DATA_NEEDED: tSC value] —
Operating Junction Temperature (TJ) -55 C to +150 C —
Storage Temperature (Tstg) -55 C to +150 C [DATA_NEEDED: storage temperature range]
Package Type TO-247AD (3-pin with tab) —
माउंटिंग प्रकार Through Hole Through Hole
Integrated Diode Yes - co-packaged FRED (D1 variant) —
RoHS स्थिति Compliant ROHS3 Compliant
Manufacturer — IXYS (acquired by Littelfuse)
Part Number — IXDH20N120
Device Type — NPT (Non-Punch Through) IGBT
Continuous Collector Current (IC25) — 38 A
Gate-Emitter Voltage (VGES, continuous) — +/- 20 V
Gate-Emitter Voltage (VGEM, transient) — [DATA_NEEDED: VGEM transient rating]
Power Dissipation (PC) — 200 W
Junction Temperature (TJ) — -40C to +150C [DATA_NEEDED: max TJ]
Short-Circuit Withstand (tSC) — 10 us minimum at VCE = VCES, VGE = +/- 15 V, TC = 25 C [DATA_NEEDED: exact value]
Diode Option — Optional ultra-fast FRED (D1 suffix variant: IXDH20N120D1)
पैकेज — TO-247AD (3-lead)
Operating Mode — N-Channel IGBT

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