IXDH20N120D1 vs IXDH20N120 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IXDH20N120D1 sa pamamagitan ng Littelfuse at IXDH20N120 sa pamamagitan ng Littelfuse. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Littelfuse
IXDH20N120 IXDH20N120 - 1200V 38A NPT IGBT | IXYS | TO-247AD

IXDH20N120 - 1200V 38A NPT IGBT | IXYS | TO-247AD

IXDH20N120 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IXDH20N120D1 IXDH20N120
Brand Littelfuse Littelfuse
Kategorya IGBTs IGBTs
Katayuan ng Lifecycle Aktibo Aktibo
Polarity N-Channel —
Technology NPT (Non-Punch Through) IGBT with co-packaged FRED —
Collector-Emitter Voltage (VCES) 1200 V 1200 V
Gate-Emitter Voltage (VGES) +/- 20 V —
Continuous Collector Current IC25 38 A (at TC = 25 C) —
Continuous Collector Current IC90 [DATA_NEEDED: IC90 value] —
Pulsed Collector Current (ICM) [DATA_NEEDED: ICM value] [DATA_NEEDED: pulsed collector current 1 ms]
Maximum Power Dissipation (PC) 200 W —
Voltage ng Collector-Emitter na Naging饱和 (Vce(sat)) 3.0 V typ at IC = 20 A —
Gate Threshold Voltage (VGE(th)) [DATA_NEEDED: VGE(th) value] —
RBSOA Square RBSOA at 1200 V / 38 A (snubberless hard switching) Square (no latch-up) at VGE = 15 V, Rg = 20 ohm, TJ up to 150 C
Short Circuit Withstand Time (tSC) [DATA_NEEDED: tSC value] —
Operating Junction Temperature (TJ) -55 C to +150 C —
Storage Temperature (Tstg) -55 C to +150 C [DATA_NEEDED: storage temperature range]
Package Type TO-247AD (3-pin with tab) —
Uri ng Pagpapasok Through Hole Through Hole
Integrated Diode Yes - co-packaged FRED (D1 variant) —
Tindminan RoHS Compliant ROHS3 Compliant
Manufacturer — IXYS (acquired by Littelfuse)
Part Number — IXDH20N120
Device Type — NPT (Non-Punch Through) IGBT
Continuous Collector Current (IC25) — 38 A
Gate-Emitter Voltage (VGES, continuous) — +/- 20 V
Gate-Emitter Voltage (VGEM, transient) — [DATA_NEEDED: VGEM transient rating]
Power Dissipation (PC) — 200 W
Junction Temperature (TJ) — -40C to +150C [DATA_NEEDED: max TJ]
Short-Circuit Withstand (tSC) — 10 us minimum at VCE = VCES, VGE = +/- 15 V, TC = 25 C [DATA_NEEDED: exact value]
Diode Option — Optional ultra-fast FRED (D1 suffix variant: IXDH20N120D1)
Packhaging — TO-247AD (3-lead)
Operating Mode — N-Channel IGBT

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