IXDH20N120D1 vs IXDH20N120 Perbandingan
Perbandingan bersamaan detil IXDH20N120D1 dari Littelfuse dan IXDH20N120 dari Littelfuse. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Littelfuse
IXDH20N120D1 - 1200V 38A NPT IGBT with Diode | TO-247AD | Littelfuse
IXDH20N120D1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IXDH20N120D1 | IXDH20N120 |
|---|---|---|
| Merek | Littelfuse | Littelfuse |
| Kategori | IGBTs | IGBTs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | N-Channel | — |
| Technology | NPT (Non-Punch Through) IGBT with co-packaged FRED | — |
| Collector-Emitter Voltage (VCES) | 1200 V | 1200 V |
| Gate-Emitter Voltage (VGES) | +/- 20 V | — |
| Continuous Collector Current IC25 | 38 A (at TC = 25 C) | — |
| Continuous Collector Current IC90 | [DATA_NEEDED: IC90 value] | — |
| Pulsed Collector Current (ICM) | [DATA_NEEDED: ICM value] | [DATA_NEEDED: pulsed collector current 1 ms] |
| Maximum Power Dissipation (PC) | 200 W | — |
| Tegangan Saturasi Pemisah-Penjana (Vce(sat)) | 3.0 V typ at IC = 20 A | — |
| Gate Threshold Voltage (VGE(th)) | [DATA_NEEDED: VGE(th) value] | — |
| RBSOA | Square RBSOA at 1200 V / 38 A (snubberless hard switching) | Square (no latch-up) at VGE = 15 V, Rg = 20 ohm, TJ up to 150 C |
| Short Circuit Withstand Time (tSC) | [DATA_NEEDED: tSC value] | — |
| Operating Junction Temperature (TJ) | -55 C to +150 C | — |
| Storage Temperature (Tstg) | -55 C to +150 C | [DATA_NEEDED: storage temperature range] |
| Package Type | TO-247AD (3-pin with tab) | — |
| Tipe Mounting | Through Hole | Through Hole |
| Integrated Diode | Yes - co-packaged FRED (D1 variant) | — |
| Status RoHS | Compliant | ROHS3 Compliant |
| Manufacturer | — | IXYS (acquired by Littelfuse) |
| Part Number | — | IXDH20N120 |
| Device Type | — | NPT (Non-Punch Through) IGBT |
| Continuous Collector Current (IC25) | — | 38 A |
| Gate-Emitter Voltage (VGES, continuous) | — | +/- 20 V |
| Gate-Emitter Voltage (VGEM, transient) | — | [DATA_NEEDED: VGEM transient rating] |
| Power Dissipation (PC) | — | 200 W |
| Junction Temperature (TJ) | — | -40C to +150C [DATA_NEEDED: max TJ] |
| Short-Circuit Withstand (tSC) | — | 10 us minimum at VCE = VCES, VGE = +/- 15 V, TC = 25 C [DATA_NEEDED: exact value] |
| Diode Option | — | Optional ultra-fast FRED (D1 suffix variant: IXDH20N120D1) |
| Paket | — | TO-247AD (3-lead) |
| Operating Mode | — | N-Channel IGBT |