IXDH20N120D1 vs IXDH20N120 比較

詳細並排比較 IXDH20N120D1 由 Littelfuse 與 IXDH20N120 由 Littelfuse. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Littelfuse
IXDH20N120 IXDH20N120 - 1200V 38A NPT IGBT | IXYS | TO-247AD

IXDH20N120 - 1200V 38A NPT IGBT | IXYS | TO-247AD

IXDH20N120 ✓ 啟用中

規格比較

參數 IXDH20N120D1 IXDH20N120
品牌 Littelfuse Littelfuse
類別 IGBTs IGBTs
生命週期狀態 啟用中 啟用中
Polarity N-Channel —
Technology NPT (Non-Punch Through) IGBT with co-packaged FRED —
Collector-Emitter Voltage (VCES) 1200 V 1200 V
Gate-Emitter Voltage (VGES) +/- 20 V —
Continuous Collector Current IC25 38 A (at TC = 25 C) —
Continuous Collector Current IC90 [DATA_NEEDED: IC90 value] —
Pulsed Collector Current (ICM) [DATA_NEEDED: ICM value] [DATA_NEEDED: pulsed collector current 1 ms]
Maximum Power Dissipation (PC) 200 W —
集極-射極飽和電壓 (Vce(sat)) 3.0 V typ at IC = 20 A —
Gate Threshold Voltage (VGE(th)) [DATA_NEEDED: VGE(th) value] —
RBSOA Square RBSOA at 1200 V / 38 A (snubberless hard switching) Square (no latch-up) at VGE = 15 V, Rg = 20 ohm, TJ up to 150 C
Short Circuit Withstand Time (tSC) [DATA_NEEDED: tSC value] —
Operating Junction Temperature (TJ) -55 C to +150 C —
Storage Temperature (Tstg) -55 C to +150 C [DATA_NEEDED: storage temperature range]
Package Type TO-247AD (3-pin with tab) —
安裝類型 Through Hole Through Hole
Integrated Diode Yes - co-packaged FRED (D1 variant) —
RoHS 狀態 Compliant ROHS3 Compliant
Manufacturer — IXYS (acquired by Littelfuse)
Part Number — IXDH20N120
Device Type — NPT (Non-Punch Through) IGBT
Continuous Collector Current (IC25) — 38 A
Gate-Emitter Voltage (VGES, continuous) — +/- 20 V
Gate-Emitter Voltage (VGEM, transient) — [DATA_NEEDED: VGEM transient rating]
Power Dissipation (PC) — 200 W
Junction Temperature (TJ) — -40C to +150C [DATA_NEEDED: max TJ]
Short-Circuit Withstand (tSC) — 10 us minimum at VCE = VCES, VGE = +/- 15 V, TC = 25 C [DATA_NEEDED: exact value]
Diode Option — Optional ultra-fast FRED (D1 suffix variant: IXDH20N120D1)
封裝 — TO-247AD (3-lead)
Operating Mode — N-Channel IGBT

資料表與資源

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