MRF18060BLSR3 vs MRF18030BLSR3 तुलना
विस्तृत दोनों ओर की तुलना MRF18060BLSR3 द्वारा NXP Semiconductors और MRF18030BLSR3 द्वारा NXP Semiconductors. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
NXP Semiconductors
MRF18060BLSR3 - 60W RF Power MOSFET 1930-1990 MHz | NXP
MRF18060BLSR3 ⚠ अंतिम खरीदNXP Semiconductors
MRF18030BLSR3 - 30W 1930-1990 MHz RF Power MOSFET LDMOS | NXP
MRF18030BLSR3 ✓ सक्रियविशेषता तुलना
| पैरामीटर | MRF18060BLSR3 | MRF18030BLSR3 |
|---|---|---|
| ब्रांड | NXP Semiconductors | NXP Semiconductors |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | अंतिम बार खरीदें | सक्रिय |
| ट्रांज़िस्टर प्रकार | Lateral N-Channel Enhancement-Mode MOSFET | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) |
| Manufacturer | NXP Semiconductors (formerly Freescale/Motorola) | Analog Devices / NXP Semiconductors (formerly Freescale) |
| Frequency Range | 1930 MHz to 1990 MHz (specified band), 1800-2000 MHz (operational) | — |
| Output Power (Pout) | 60 W CW | 30 W (CW or pulsed, in-band) |
| Drain-Source Voltage (VDSS) | 26 V | 26 V typical operating |
| Test Voltage (VDD) | 26 V | — |
| Power Gain (Gps) | 13 dB (typical) | — |
| Drain Efficiency | [DATA_NEEDED: drain efficiency percentage] | [DATA_NEEDED: typical drain efficiency %] |
| Maximum Power Dissipation (Absolute) | 180 W | — |
| Maximum Drain Current | [DATA_NEEDED: maximum DC drain current] | — |
| ऑपरेटिंग तापमान रेंज | [DATA_NEEDED: operating temperature range] | — |
| Storage Temperature Range | [DATA_NEEDED: storage temperature range] | — |
| पैकेज / केस | NI-780S (CASE 465-06, Style 1), ceramic surface-mount | — |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| Configuration | Single N-channel | Single, common-source RF power transistor |
| Peak Reflow Temperature | 260 C | — |
| MSL स्तर | [DATA_NEEDED: MSL rating] | — |
| RoHS स्थिति | [DATA_NEEDED: RoHS compliance] | — |
| Part Number | — | MRF18030BLSR3 |
| Technology | — | LDMOS, laterally diffused metal-oxide-semiconductor |
| Operating Frequency Range | — | 1.8 GHz to 2 GHz (specified 1930-1990 MHz) |
| Target Application Band | — | GSM / GSM-EDGE / DCS-1900 / PCS-1900 |
| Power Gain | — | 14 dB typical at 2 GHz |
| Maximum Power Dissipation (Abs) | — | 83.3 W |
| Operating Mode | — | Enhancement Mode |
| Drain Current (Id) at test condition | — | 250 mA (quiescent / small-signal reference) |
| पैकेज | — | NI-400S (CASE 465E-04, Style 1), ceramic surface mount |
| Lead-Free / RoHS | — | Per NXP product page (verify with current data) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature range] |
| ऑपरेटिंग जंक्शन तापमान | — | [DATA_NEEDED: max junction temperature C] |