MRF18060BLSR3 vs MRF18030BLSR3 موازنہ
تفصیلی ساتھ ساتھ موازنہ از MRF18060BLSR3 بذریعہ NXP Semiconductors اور MRF18030BLSR3 بذریعہ NXP Semiconductors. اہم خصوصیات، برقی پیرامیٹرز، پیکیجنگ، لائف سائیکل اسٹیٹس، قیمتوں اور دستیابی کا موازنہ کریں تاکہ آپ کی ڈیزائن ضروریات کے لیے بہترین کمپوننٹ کا تعین ہو سکے۔
NXP Semiconductors
MRF18060BLSR3 - 60W RF Power MOSFET 1930-1990 MHz | NXP
MRF18060BLSR3 ⚠ آخری بار خریداریNXP Semiconductors
MRF18030BLSR3 - 30W 1930-1990 MHz RF Power MOSFET LDMOS | NXP
MRF18030BLSR3 ✓ فعالخصوصیات کا موازنہ
| پیرامیٹر | MRF18060BLSR3 | MRF18030BLSR3 |
|---|---|---|
| برانڈ | NXP Semiconductors | NXP Semiconductors |
| زمرہ | MOSFETs | MOSFETs |
| لائف سائیکل کی حالت | آخری بار خریداری | فعال |
| ٹرانزسٹر کی قسم | Lateral N-Channel Enhancement-Mode MOSFET | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) |
| Manufacturer | NXP Semiconductors (formerly Freescale/Motorola) | Analog Devices / NXP Semiconductors (formerly Freescale) |
| Frequency Range | 1930 MHz to 1990 MHz (specified band), 1800-2000 MHz (operational) | — |
| Output Power (Pout) | 60 W CW | 30 W (CW or pulsed, in-band) |
| Drain-Source Voltage (VDSS) | 26 V | 26 V typical operating |
| Test Voltage (VDD) | 26 V | — |
| Power Gain (Gps) | 13 dB (typical) | — |
| Drain Efficiency | [DATA_NEEDED: drain efficiency percentage] | [DATA_NEEDED: typical drain efficiency %] |
| Maximum Power Dissipation (Absolute) | 180 W | — |
| Maximum Drain Current | [DATA_NEEDED: maximum DC drain current] | — |
| آپریٹنگ درجہ حرارت رینج | [DATA_NEEDED: operating temperature range] | — |
| Storage Temperature Range | [DATA_NEEDED: storage temperature range] | — |
| پیکیج / کیس | NI-780S (CASE 465-06, Style 1), ceramic surface-mount | — |
| ماؤنٹنگ ٹائپ | Surface Mount | Surface Mount |
| Configuration | Single N-channel | Single, common-source RF power transistor |
| Peak Reflow Temperature | 260 C | — |
| MSL لیول | [DATA_NEEDED: MSL rating] | — |
| RoHS اسٹیٹس | [DATA_NEEDED: RoHS compliance] | — |
| Part Number | — | MRF18030BLSR3 |
| Technology | — | LDMOS, laterally diffused metal-oxide-semiconductor |
| Operating Frequency Range | — | 1.8 GHz to 2 GHz (specified 1930-1990 MHz) |
| Target Application Band | — | GSM / GSM-EDGE / DCS-1900 / PCS-1900 |
| Power Gain | — | 14 dB typical at 2 GHz |
| Maximum Power Dissipation (Abs) | — | 83.3 W |
| Operating Mode | — | Enhancement Mode |
| Drain Current (Id) at test condition | — | 250 mA (quiescent / small-signal reference) |
| پیکیج | — | NI-400S (CASE 465E-04, Style 1), ceramic surface mount |
| Lead-Free / RoHS | — | Per NXP product page (verify with current data) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature range] |
| آپریٹنگ جنکشن درجہ حرارت | — | [DATA_NEEDED: max junction temperature C] |