MRF18060BLSR3 vs MRF18030BLSR3 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MRF18060BLSR3 sa pamamagitan ng NXP Semiconductors at MRF18030BLSR3 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
NXP Semiconductors
MRF18060BLSR3 - 60W RF Power MOSFET 1930-1990 MHz | NXP
MRF18060BLSR3 ⚠ Huling PagbiliNXP Semiconductors
MRF18030BLSR3 - 30W 1930-1990 MHz RF Power MOSFET LDMOS | NXP
MRF18030BLSR3 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MRF18060BLSR3 | MRF18030BLSR3 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Huling Pagbili | Aktibo |
| Uri ng Transistor | Lateral N-Channel Enhancement-Mode MOSFET | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) |
| Manufacturer | NXP Semiconductors (formerly Freescale/Motorola) | Analog Devices / NXP Semiconductors (formerly Freescale) |
| Frequency Range | 1930 MHz to 1990 MHz (specified band), 1800-2000 MHz (operational) | — |
| Output Power (Pout) | 60 W CW | 30 W (CW or pulsed, in-band) |
| Drain-Source Voltage (VDSS) | 26 V | 26 V typical operating |
| Test Voltage (VDD) | 26 V | — |
| Power Gain (Gps) | 13 dB (typical) | — |
| Drain Efficiency | [DATA_NEEDED: drain efficiency percentage] | [DATA_NEEDED: typical drain efficiency %] |
| Maximum Power Dissipation (Absolute) | 180 W | — |
| Maximum Drain Current | [DATA_NEEDED: maximum DC drain current] | — |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | — |
| Storage Temperature Range | [DATA_NEEDED: storage temperature range] | — |
| Packhaging / Kaso | NI-780S (CASE 465-06, Style 1), ceramic surface-mount | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Configuration | Single N-channel | Single, common-source RF power transistor |
| Peak Reflow Temperature | 260 C | — |
| Level ng MSL | [DATA_NEEDED: MSL rating] | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS compliance] | — |
| Part Number | — | MRF18030BLSR3 |
| Technology | — | LDMOS, laterally diffused metal-oxide-semiconductor |
| Operating Frequency Range | — | 1.8 GHz to 2 GHz (specified 1930-1990 MHz) |
| Target Application Band | — | GSM / GSM-EDGE / DCS-1900 / PCS-1900 |
| Power Gain | — | 14 dB typical at 2 GHz |
| Maximum Power Dissipation (Abs) | — | 83.3 W |
| Operating Mode | — | Enhancement Mode |
| Drain Current (Id) at test condition | — | 250 mA (quiescent / small-signal reference) |
| Packhaging | — | NI-400S (CASE 465E-04, Style 1), ceramic surface mount |
| Lead-Free / RoHS | — | Per NXP product page (verify with current data) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature range] |
| Temperature ng Junction na Operasyon | — | [DATA_NEEDED: max junction temperature C] |