MRF9030MBR1 vs MRF9030LR1 तुलना
विस्तृत दोनों ओर की तुलना MRF9030MBR1 द्वारा NXP Semiconductors और MRF9030LR1 द्वारा NXP Semiconductors. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
NXP Semiconductors
MRF9030LR1 - 945MHz 30W 26V RF Power MOSFET | NXP Semiconductors
MRF9030LR1 ✓ सक्रियविशेषता तुलना
| पैरामीटर | MRF9030MBR1 | MRF9030LR1 |
|---|---|---|
| ब्रांड | NXP Semiconductors | NXP Semiconductors |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Manufacturer | NXP Semiconductors (formerly Freescale / Motorola) | — |
| Part Family | RF Sub-Micron MOSFET Line | — |
| ट्रांज़िस्टर प्रकार | N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Lateral MOSFET (RF Power) |
| Configuration | Single, common-source | Single transistor, common-source |
| Typical Output Power | 30 W at 945 MHz | — |
| Operating Frequency Range | DC to 1000 MHz | — |
| Power Gain (typical) | 20 dB | — |
| Drain-Source Voltage (Vds) Rating | 26 V | — |
| Typical Bias Current | 250 mA | — |
| माउंटिंग प्रकार | Surface Mount (flanged ceramic) | Chassis / heatsink mount (flanged ceramic) |
| पैकेज | TO-272-2 (ceramic, 2-lead flanged) | NI-360 (NI-360L) ceramic flange, 3-pin (Drain / Gate / Source) |
| Maximum Dissipation (per Partstack) | 139 W | — |
| नमी संवेदनशीलता स्तर (MSL) | 3 | — |
| Application | Broadband RF power amplifier / large-signal common-source amplifier | — |
| Polarity / Channel Mode | N-Channel, enhancement-mode | — |
| RoHS स्थिति | [DATA_NEEDED: RoHS compliance status from manufacturer page] | Compliant (per current NXP product page) |
| Technology | — | Enhancement-Mode Lateral RF Sub-Micron MOSFET |
| Operating Frequency | — | Up to 1000 MHz (1.0 GHz) |
| Test Frequency | — | 945 MHz |
| Drain-Source Voltage (Vdss) | — | 68 V |
| Continuous Drain Current (Id) | — | 250 mA (datasheet typical) |
| Output Power (Pout) | — | 30 W (CW / pulsed RF) |
| Power Gain (Gp) | — | 19 dB (typical at 945 MHz) |
| Drain Efficiency | — | [DATA_NEEDED: typical drain efficiency %] |
| Supply Voltage (Vdd) | — | 26 V (typical base-station bias) |
| Maximum Power Dissipation | — | 92 W (absolute, with proper heatsinking) |
| ऑपरेटिंग तापमान | — | -40C to +150C (junction, derated) |
| Storage Temperature | — | -65C to +150C |
| Lead Finish | — | Gold-plated (per NI-360 case 360B-05) |
| MSL स्तर | — | Not applicable (non-SMD ceramic flange) |