MRF9030MBR1 vs MRF9030LR1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma MRF9030MBR1 tarafından NXP Semiconductors ve MRF9030LR1 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
NXP Semiconductors
MRF9030LR1 - 945MHz 30W 26V RF Power MOSFET | NXP Semiconductors
MRF9030LR1 ✓ AktifÖzellik Karşılaştırması
| Parametre | MRF9030MBR1 | MRF9030LR1 |
|---|---|---|
| Marka | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | NXP Semiconductors (formerly Freescale / Motorola) | — |
| Part Family | RF Sub-Micron MOSFET Line | — |
| Transistor Türü | N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Lateral MOSFET (RF Power) |
| Configuration | Single, common-source | Single transistor, common-source |
| Typical Output Power | 30 W at 945 MHz | — |
| Operating Frequency Range | DC to 1000 MHz | — |
| Power Gain (typical) | 20 dB | — |
| Drain-Source Voltage (Vds) Rating | 26 V | — |
| Typical Bias Current | 250 mA | — |
| Montaj Türü | Surface Mount (flanged ceramic) | Chassis / heatsink mount (flanged ceramic) |
| Paket | TO-272-2 (ceramic, 2-lead flanged) | NI-360 (NI-360L) ceramic flange, 3-pin (Drain / Gate / Source) |
| Maximum Dissipation (per Partstack) | 139 W | — |
| Nem Hassasiyet Seviyesi (MSL) | 3 | — |
| Application | Broadband RF power amplifier / large-signal common-source amplifier | — |
| Polarity / Channel Mode | N-Channel, enhancement-mode | — |
| RoHS Durumu | [DATA_NEEDED: RoHS compliance status from manufacturer page] | Compliant (per current NXP product page) |
| Technology | — | Enhancement-Mode Lateral RF Sub-Micron MOSFET |
| Operating Frequency | — | Up to 1000 MHz (1.0 GHz) |
| Test Frequency | — | 945 MHz |
| Drain-Source Voltage (Vdss) | — | 68 V |
| Continuous Drain Current (Id) | — | 250 mA (datasheet typical) |
| Output Power (Pout) | — | 30 W (CW / pulsed RF) |
| Power Gain (Gp) | — | 19 dB (typical at 945 MHz) |
| Drain Efficiency | — | [DATA_NEEDED: typical drain efficiency %] |
| Supply Voltage (Vdd) | — | 26 V (typical base-station bias) |
| Maximum Power Dissipation | — | 92 W (absolute, with proper heatsinking) |
| İşletim Sıcaklığı | — | -40C to +150C (junction, derated) |
| Storage Temperature | — | -65C to +150C |
| Lead Finish | — | Gold-plated (per NI-360 case 360B-05) |
| MSL Seviyesi | — | Not applicable (non-SMD ceramic flange) |