SSM3K35CT-L3F vs 2N7002L तुलना
विस्तृत दोनों ओर की तुलना SSM3K35CT-L3F द्वारा Toshiba और 2N7002L द्वारा onsemi. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | SSM3K35CT-L3F | 2N7002L |
|---|---|---|
| ब्रांड | Toshiba | onsemi |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Polarity | N-Channel | — |
| MOSFET Operating Mode | Enhancement | — |
| Drain-Source Voltage (V(DSS)) | 20 V | — |
| Gate-Source Voltage (V(GSS)) | ±10 V (per datasheet, [DATA_NEEDED: exact value]) | — |
| Continuous Drain Current (I(D)) | 0.18 A (180 mA) | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS = 2.5 V] | — |
| Power Dissipation (P_D) | 500 mW (Ta) / [DATA_NEEDED: Ta condition] | — |
| पैकेज | SOT-883 (CST3), 3 pins | SOT-23 (SOT-23-3) |
| Package Size | 1.0 mm x 0.6 mm, max height 0.5 mm | — |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| ऑपरेटिंग तापमान | [DATA_NEEDED: junction/storage temperature range] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | 1 V to 2.5 V |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typical] | — |
| Lead-Free | Yes (L3F suffix) | — |
| RoHS स्थिति | Compliant | [DATA_NEEDED: RoHS status] |
| Tape and Reel | 8 mm embossed carrier, 3,000 pcs/reel (L3F suffix) | — |
| Manufacturer | Toshiba Electronic Devices & Storage Corporation | onsemi |
| ट्रांज़िस्टर प्रकार | — | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) | — | 115 mA (Ta) |
| On-State Resistance (RDS(on)) | — | 7.5 ohm max at VGS = 5V |
| Gate-Source Voltage (VGS) | — | +/-20 V |
| Power Dissipation (PD) | — | 200 mW (Ta), 225 mW max |
| Technology | — | High cell density trench MOSFET |
| Configuration | — | Single FET |
| Switching Performance | — | Fast switching, rugged and reliable |
| Gate Drive | — | 5V logic-level enhancement mode |
| Typical Applications | — | Low-side switching, servo motor control, gate driving, logic-level shifting |