SSM3K35CT-L3F vs 2N7002L Perbandingan

Perbandingan bersamaan detil SSM3K35CT-L3F dari Toshiba dan 2N7002L dari onsemi. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum SSM3K35CT-L3F 2N7002L
Merek Toshiba onsemi
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel —
MOSFET Operating Mode Enhancement —
Drain-Source Voltage (V(DSS)) 20 V —
Gate-Source Voltage (V(GSS)) ±10 V (per datasheet, [DATA_NEEDED: exact value]) —
Continuous Drain Current (I(D)) 0.18 A (180 mA) —
On-Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS = 2.5 V] —
Power Dissipation (P_D) 500 mW (Ta) / [DATA_NEEDED: Ta condition] —
Paket SOT-883 (CST3), 3 pins SOT-23 (SOT-23-3)
Package Size 1.0 mm x 0.6 mm, max height 0.5 mm —
Tipe Mounting Surface Mount Surface Mount
Suhu Kerja [DATA_NEEDED: junction/storage temperature range] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] 1 V to 2.5 V
Input Capacitance (Ciss) [DATA_NEEDED: Ciss typical] —
Lead-Free Yes (L3F suffix) —
Status RoHS Compliant [DATA_NEEDED: RoHS status]
Tape and Reel 8 mm embossed carrier, 3,000 pcs/reel (L3F suffix) —
Manufacturer Toshiba Electronic Devices & Storage Corporation onsemi
Tipe Transistor — N-Channel Enhancement Mode MOSFET
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) — 115 mA (Ta)
On-State Resistance (RDS(on)) — 7.5 ohm max at VGS = 5V
Gate-Source Voltage (VGS) — +/-20 V
Power Dissipation (PD) — 200 mW (Ta), 225 mW max
Technology — High cell density trench MOSFET
Configuration — Single FET
Switching Performance — Fast switching, rugged and reliable
Gate Drive — 5V logic-level enhancement mode
Typical Applications — Low-side switching, servo motor control, gate driving, logic-level shifting

Spek dan Sumber

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