SSM3K35CT-L3F vs 2N7002L Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci SSM3K35CT-L3F disebabkan oleh Toshiba dan 2N7002L disebabkan oleh onsemi. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr SSM3K35CT-L3F 2N7002L
Merek Toshiba onsemi
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel —
MOSFET Operating Mode Enhancement —
Drain-Source Voltage (V(DSS)) 20 V —
Gate-Source Voltage (V(GSS)) ±10 V (per datasheet, [DATA_NEEDED: exact value]) —
Continuous Drain Current (I(D)) 0.18 A (180 mA) —
On-Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS = 2.5 V] —
Power Dissipation (P_D) 500 mW (Ta) / [DATA_NEEDED: Ta condition] —
Kemasan SOT-883 (CST3), 3 pins SOT-23 (SOT-23-3)
Package Size 1.0 mm x 0.6 mm, max height 0.5 mm —
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi [DATA_NEEDED: junction/storage temperature range] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] 1 V to 2.5 V
Input Capacitance (Ciss) [DATA_NEEDED: Ciss typical] —
Lead-Free Yes (L3F suffix) —
Status RoHS Compliant [DATA_NEEDED: RoHS status]
Tape and Reel 8 mm embossed carrier, 3,000 pcs/reel (L3F suffix) —
Manufacturer Toshiba Electronic Devices & Storage Corporation onsemi
Jenis Transistor — N-Channel Enhancement Mode MOSFET
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) — 115 mA (Ta)
On-State Resistance (RDS(on)) — 7.5 ohm max at VGS = 5V
Gate-Source Voltage (VGS) — +/-20 V
Power Dissipation (PD) — 200 mW (Ta), 225 mW max
Technology — High cell density trench MOSFET
Configuration — Single FET
Switching Performance — Fast switching, rugged and reliable
Gate Drive — 5V logic-level enhancement mode
Typical Applications — Low-side switching, servo motor control, gate driving, logic-level shifting

Laporan Datasheet & Sumber

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