1EDN7116GXTMA1 vs 1EDN7136UXTSA1 Perbandingan
Perbandingan bersamaan detil 1EDN7116GXTMA1 dari Infineon dan 1EDN7136UXTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | 1EDN7116GXTMA1 | 1EDN7136UXTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | Power MOSFET Drivers | Power MOSFET Drivers |
| Status Lingkungan Hidup | Aktif | Aktif |
| Fungsi | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs | High-side / Low-side gate driver IC |
| Driver Configuration | Non-inverting, single low-side | — |
| Number of Drivers | 1 | — |
| Peak Source Current | 2 A (typ) | 1 A |
| Peak Sink Current | 4 A (typ) | 2 A |
| Input Type | Truly Differential Input (TDI) | Truly Differential Input (TDI) |
| Supply Voltage (VCC) | 4.5 V to 5.5 V | — |
| Switch-Node Blocking Voltage | 200 V (max) | — |
| Propagation Delay (Typ) | 9 ns | [DATA_NEEDED: propagation delay value] |
| Rise Time (Typ) | 3 ns | — |
| Fall Time (Typ) | 3 ns | — |
| Quiescent Current (Typ) | 0.6 mA | — |
| Miller Clamp | Integrated, active | — |
| UVLO | Yes (VCC and gate-rail monitored) | — |
| Rentang Suhu Kerja | -40 °C to +125 °C | -40 C to +150 C |
| Paket | PG-VSON-10-4 (3.0 mm × 3.0 mm) | TSNP-6 with exposed pad (PG-VSON-1) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | MSL3 | [DATA_NEEDED: MSL rating] |
| Status RoHS | Compliant | Compliant |
| Target Switch Technology | GaN HEMT (CoolGaN) or Si MOSFET | — |
| Driven Device Type | — | GaN HEMT, N-channel MOSFET |
| Jumlah Output | — | 2 (high-side and low-side) |
| Driver Supply Voltage (Max) | — | 200 V |
| Logic Supply Voltage (VCC) | — | [DATA_NEEDED: VCC range] |
| Active Miller Clamp | — | Yes (integrated) |
| Under-Voltage Lockout (UVLO) | — | Yes (driver supply and logic input) |
| Lead-Free | — | Yes |
| Bebas Halogen | — | Yes (per Infineon product family convention) |