1EDN7116GXTMA1 vs 1EDN7136UXTSA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng 1EDN7116GXTMA1 sa pamamagitan ng Infineon at 1EDN7136UXTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro 1EDN7116GXTMA1 1EDN7136UXTSA1
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Fungsi Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs High-side / Low-side gate driver IC
Driver Configuration Non-inverting, single low-side —
Number of Drivers 1 —
Peak Source Current 2 A (typ) 1 A
Peak Sink Current 4 A (typ) 2 A
Input Type Truly Differential Input (TDI) Truly Differential Input (TDI)
Supply Voltage (VCC) 4.5 V to 5.5 V —
Switch-Node Blocking Voltage 200 V (max) —
Propagation Delay (Typ) 9 ns [DATA_NEEDED: propagation delay value]
Rise Time (Typ) 3 ns —
Fall Time (Typ) 3 ns —
Quiescent Current (Typ) 0.6 mA —
Miller Clamp Integrated, active —
UVLO Yes (VCC and gate-rail monitored) —
Hanay ng Temperature na Operasyon -40 °C to +125 °C -40 C to +150 C
Packhaging PG-VSON-10-4 (3.0 mm × 3.0 mm) TSNP-6 with exposed pad (PG-VSON-1)
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL MSL3 [DATA_NEEDED: MSL rating]
Tindminan RoHS Compliant Compliant
Target Switch Technology GaN HEMT (CoolGaN) or Si MOSFET —
Driven Device Type — GaN HEMT, N-channel MOSFET
Bilang ng Outputs — 2 (high-side and low-side)
Driver Supply Voltage (Max) — 200 V
Logic Supply Voltage (VCC) — [DATA_NEEDED: VCC range]
Active Miller Clamp — Yes (integrated)
Under-Voltage Lockout (UVLO) — Yes (driver supply and logic input)
Lead-Free — Yes
Wala sa Halogen — Yes (per Infineon product family convention)

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