1EDN7116GXTMA1 vs 1EDN7136UXTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 1EDN7116GXTMA1 disebabkan oleh Infineon dan 1EDN7136UXTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 1EDN7116GXTMA1 1EDN7136UXTSA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs High-side / Low-side gate driver IC
Driver Configuration Non-inverting, single low-side —
Number of Drivers 1 —
Peak Source Current 2 A (typ) 1 A
Peak Sink Current 4 A (typ) 2 A
Input Type Truly Differential Input (TDI) Truly Differential Input (TDI)
Supply Voltage (VCC) 4.5 V to 5.5 V —
Switch-Node Blocking Voltage 200 V (max) —
Propagation Delay (Typ) 9 ns [DATA_NEEDED: propagation delay value]
Rise Time (Typ) 3 ns —
Fall Time (Typ) 3 ns —
Quiescent Current (Typ) 0.6 mA —
Miller Clamp Integrated, active —
UVLO Yes (VCC and gate-rail monitored) —
Gambaran Suhu Operasi -40 °C to +125 °C -40 C to +150 C
Kemasan PG-VSON-10-4 (3.0 mm × 3.0 mm) TSNP-6 with exposed pad (PG-VSON-1)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL MSL3 [DATA_NEEDED: MSL rating]
Status RoHS Compliant Compliant
Target Switch Technology GaN HEMT (CoolGaN) or Si MOSFET —
Driven Device Type — GaN HEMT, N-channel MOSFET
Bilangan Output — 2 (high-side and low-side)
Driver Supply Voltage (Max) — 200 V
Logic Supply Voltage (VCC) — [DATA_NEEDED: VCC range]
Active Miller Clamp — Yes (integrated)
Under-Voltage Lockout (UVLO) — Yes (driver supply and logic input)
Lead-Free — Yes
Boson Bebas — Yes (per Infineon product family convention)

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