1EDN7136GXTMA1 vs 1EDN7136UXTSA1 Perbandingan
Perbandingan bersamaan detil 1EDN7136GXTMA1 dari Infineon dan 1EDN7136UXTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | 1EDN7136GXTMA1 | 1EDN7136UXTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | Power MOSFET Drivers | Power MOSFET Drivers |
| Status Lingkungan Hidup | Aktif | Aktif |
| Product Type | Low-side gate driver IC | — |
| Configuration | Single channel, non-inverting | — |
| Peak Source Current | 4 A | 1 A |
| Peak Sink Current | 8 A | 2 A |
| Target Switch | GaN HEMT (CoolGaN) / MOSFET | — |
| Input Logic | TTL/CMOS compatible | — |
| UVLO | Yes (VDD under-voltage lockout) | — |
| Propagation Delay | Sub-nanosecond class | — |
| Paket | PG-VSON-10-4 (leadless, thermal pad) | TSNP-6 with exposed pad (PG-VSON-1) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | -40 C to +125 C | — |
| Level MSL | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| Status RoHS | Compliant | Compliant |
| Lead-free | Yes | — |
| Input Voltage (VDD) | [DATA_NEEDED: VDD range V] | — |
| Output Voltage (GaN gate) | Approximately 6 V (regulated) | — |
| Fungsi | — | High-side / Low-side gate driver IC |
| Driven Device Type | — | GaN HEMT, N-channel MOSFET |
| Jumlah Output | — | 2 (high-side and low-side) |
| Driver Supply Voltage (Max) | — | 200 V |
| Logic Supply Voltage (VCC) | — | [DATA_NEEDED: VCC range] |
| Input Type | — | Truly Differential Input (TDI) |
| Active Miller Clamp | — | Yes (integrated) |
| Under-Voltage Lockout (UVLO) | — | Yes (driver supply and logic input) |
| Propagation Delay (Typ) | — | [DATA_NEEDED: propagation delay value] |
| Rentang Suhu Kerja | — | -40 C to +150 C |
| Lead-Free | — | Yes |
| Bebas Halogen | — | Yes (per Infineon product family convention) |