1EDN7136GXTMA1 vs 1EDN7136UXTSA1 比較
詳細並排比較 1EDN7136GXTMA1 由 Infineon 與 1EDN7136UXTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | 1EDN7136GXTMA1 | 1EDN7136UXTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | Power MOSFET Drivers | Power MOSFET Drivers |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Product Type | Low-side gate driver IC | — |
| Configuration | Single channel, non-inverting | — |
| Peak Source Current | 4 A | 1 A |
| Peak Sink Current | 8 A | 2 A |
| Target Switch | GaN HEMT (CoolGaN) / MOSFET | — |
| Input Logic | TTL/CMOS compatible | — |
| UVLO | Yes (VDD under-voltage lockout) | — |
| Propagation Delay | Sub-nanosecond class | — |
| 封裝 | PG-VSON-10-4 (leadless, thermal pad) | TSNP-6 with exposed pad (PG-VSON-1) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | -40 C to +125 C | — |
| MSL 等級 | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| RoHS 狀態 | Compliant | Compliant |
| Lead-free | Yes | — |
| Input Voltage (VDD) | [DATA_NEEDED: VDD range V] | — |
| Output Voltage (GaN gate) | Approximately 6 V (regulated) | — |
| 功能 | — | High-side / Low-side gate driver IC |
| Driven Device Type | — | GaN HEMT, N-channel MOSFET |
| 輸出數量 | — | 2 (high-side and low-side) |
| Driver Supply Voltage (Max) | — | 200 V |
| Logic Supply Voltage (VCC) | — | [DATA_NEEDED: VCC range] |
| Input Type | — | Truly Differential Input (TDI) |
| Active Miller Clamp | — | Yes (integrated) |
| Under-Voltage Lockout (UVLO) | — | Yes (driver supply and logic input) |
| Propagation Delay (Typ) | — | [DATA_NEEDED: propagation delay value] |
| 工作溫度範圍 | — | -40 C to +150 C |
| Lead-Free | — | Yes |
| 無鹵素 | — | Yes (per Infineon product family convention) |