1EDN7136GXTMA1 vs 1EDN7136UXTSA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci 1EDN7136GXTMA1 disebabkan oleh Infineon dan 1EDN7136UXTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | 1EDN7136GXTMA1 | 1EDN7136UXTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | Power MOSFET Drivers | Power MOSFET Drivers |
| Status Lingkungan Hidup | Aktif | Aktif |
| Product Type | Low-side gate driver IC | — |
| Configuration | Single channel, non-inverting | — |
| Peak Source Current | 4 A | 1 A |
| Peak Sink Current | 8 A | 2 A |
| Target Switch | GaN HEMT (CoolGaN) / MOSFET | — |
| Input Logic | TTL/CMOS compatible | — |
| UVLO | Yes (VDD under-voltage lockout) | — |
| Propagation Delay | Sub-nanosecond class | — |
| Kemasan | PG-VSON-10-4 (leadless, thermal pad) | TSNP-6 with exposed pad (PG-VSON-1) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | -40 C to +125 C | — |
| Aras MSL | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| Status RoHS | Compliant | Compliant |
| Lead-free | Yes | — |
| Input Voltage (VDD) | [DATA_NEEDED: VDD range V] | — |
| Output Voltage (GaN gate) | Approximately 6 V (regulated) | — |
| Fungsi | — | High-side / Low-side gate driver IC |
| Driven Device Type | — | GaN HEMT, N-channel MOSFET |
| Bilangan Output | — | 2 (high-side and low-side) |
| Driver Supply Voltage (Max) | — | 200 V |
| Logic Supply Voltage (VCC) | — | [DATA_NEEDED: VCC range] |
| Input Type | — | Truly Differential Input (TDI) |
| Active Miller Clamp | — | Yes (integrated) |
| Under-Voltage Lockout (UVLO) | — | Yes (driver supply and logic input) |
| Propagation Delay (Typ) | — | [DATA_NEEDED: propagation delay value] |
| Gambaran Suhu Operasi | — | -40 C to +150 C |
| Lead-Free | — | Yes |
| Boson Bebas | — | Yes (per Infineon product family convention) |